Thanh Chi Dinh

US Patent:

20220367781, Nov 17, 2022

Filed:

May 16, 2021

Appl. No.:

17/321462

Inventors:

- Redmond WA, US
Judith Cutaran AARTS - San Jose CA, US
John S. HICKMAN - Reno NV, US
Thanh Cong DINH - San Jose CA, US

International Classification:

H01L 39/24
H01L 21/67
G06N 10/00
H01L 27/18

Abstract:

Techniques are described herein that are capable of progressively thermally drying a quantum circuit. An inert gas is progressively heated by a heater element to provide a heated inert gas. Heated ambient air and the heated inert gas combine in a heating channel, causing a combination of the heated ambient air and the heated inert gas to flow into a probe compartment to progressively thermally dry a quantum circuit therein. A flow rate of the inert gas is controlled to cause the combination to have a relative humidity less than or equal to a threshold. A temperature of the heater element may be controlled to be approximately equal to a progressively increasing target temperature within a tolerance of 3.0 C. Heating of the inert gas may be initiated based on detection of the inert gas, and the flow and heating of the inert gas may be automatically discontinued.