Thomas D Hendrickson

US Patent:

40891038, May 16, 1978

Filed:

Jun 4, 1976

Appl. No.:

5/693049

Inventors:

Thomas E. Hendrickson - Minneapolis MN
Jack S. T. Huang - New Hope MN
Wolfgang Tetzlaff - Hopkins MN

Assignee:

Honeywell Inc. - Minneapolis MN

International Classification:

B01J 1700

US Classification:

29577C

Abstract:

Methods for monolithic integrated circuit construction are presented wherein component device-isolating region self-alignment is provided and also, where an element of the device is provided through independent dopant provision steps to allow design flexibility in providing that device element and associated integrated circuit devices. The method is especially applicable to bipolar device construction.

US Patent:

47977248, Jan 10, 1989

Filed:

Jun 30, 1982

Appl. No.:

6/393891

Inventors:

Clifford H. Boler - New Hope MN
Marc D. Hartranft - Brooklyn Park MN
Thomas E. Hendrickson - Wayzata MN

Assignee:

Honeywell Inc. - Minneapolis MN

International Classification:

H01L 2704
H01L 2978

US Classification:

357 42

Abstract:

An IGFET is presented which includes a relatively low resistance path across the source-substrate junction to prevent parasitic bipolar effects while maintaining high component density in integrated circuits. The low resistance path across the source-substrate junction is formed by various methods including damaging the crystal structure at the junction interface, supplementing the damaged junction with a heavily doped region underlying the source region and spiking metallurgy. A particular application of the invention allows the prevention of latchup in CMOS devices. The invention also allows the source region of an IGFET to serve the dual functions of a source for a MOSFET as well as an ohmic contact to the underlying well or substrate.

US Patent:

42569796, Mar 17, 1981

Filed:

Dec 26, 1978

Appl. No.:

5/973463

Inventors:

Thomas E. Hendrickson - Wayzata MN
Thomas C. Spindler - Coon Rapids MN

Assignee:

Honeywell, Inc. - Minneapolis MN

International Classification:

H03K 1760
H01L 2972

US Classification:

307571

Abstract:

An electronic switching circuit is provided for controlling transfer of electrical power from an alternating polarity electrical power supply to a load means through use of a field-effect transistor device as the primary power controlling element.

US Patent:

42569770, Mar 17, 1981

Filed:

Dec 26, 1978

Appl. No.:

5/973215

Inventors:

Thomas E. Hendrickson - Wayzata MN

Assignee:

Honeywell Inc. - Minneapolis MN

International Classification:

H03K 1760
H01L 2972

US Classification:

307571

Abstract:

An electronic switching circuit is provided for controlling transfer of electrical power from an alternating polarity electrical power supply to a load means through use of a field-effect transistor device as the primary power controlling element.

US Patent:

42950570, Oct 13, 1981

Filed:

Nov 8, 1979

Appl. No.:

6/092785

Inventors:

Thomas E. Hendrickson - Wayzata MN

Assignee:

Honeywell Inc. - Minneapolis MN

International Classification:

H03K 522
H03K 500

US Classification:

307231

Abstract:

An electronic control circuit is provided which operates on selected characteristics of oppositely phased control signals. A logic arrangement sorts out those signal portions having the selected characteristics to provide an output signal.

US Patent:

43191827, Mar 9, 1982

Filed:

Apr 18, 1980

Appl. No.:

6/141512

Inventors:

Marc D. Hartranft - Brooklyn Park MN
Thomas E. Hendrickson - Wayzata MN

Assignee:

Honeywell Inc. - Minneapolis MN

International Classification:

G05F 500

US Classification:

323319

Abstract:

Electronic switching circuit is provided for controlling transfer of electrical power from an alternating polarity electrical power supply to a load means through use of a field-effect transistor device as the controlling element. A circuit arrangement is provided for switching into the "on" condition primary power control field-effect transistor device only when the voltage thereacross is at a relatively low value and for switching into the "off" condition this device in a gradual manner, relatively slowly reducing currents flowing therethrough. A circuit arrangement for a command source directing operation of the primary power transfer control field-effect transistor device provides command source isolation.

US Patent:

41480473, Apr 3, 1979

Filed:

Jan 16, 1978

Appl. No.:

5/869981

Inventors:

Thomas E. Hendrickson - Wayzata MN

Assignee:

Honeywell Inc. - Minneapolis MN

International Classification:

H01L 2972

US Classification:

357 23

Abstract:

A field-effect transistor device is provided having a relatively low "on" condition resistance between the source and drain terminals thereof by virtue of the geometrical design used.

US Patent:

41527143, May 1, 1979

Filed:

Jan 16, 1978

Appl. No.:

5/869980

Inventors:

Thomas E. Hendrickson - Wayzata MN
James M. Daughton - Edina MN

Assignee:

Honeywell Inc. - Minneapolis MN

International Classification:

H01L 2972

US Classification:

357 23

Abstract:

A field-effect transistor device is provided having a relatively substantial capability to withstand reverse bias voltages. The device can also be provided having a relatively low "on" condition resistance between the source and drain terminals thereof by virtue of the geometrical design used.