Tony Chen Chiang

US Patent:

7154369, Dec 26, 2006

Filed:

Jun 10, 2004

Appl. No.:

10/866224

Inventors:

Douglas W. Dietz - Rancho Palos Verdes CA, US
Louis C. Moe - Fountain Valley CA, US
Leah O. Valmidiano - Carson CA, US
Mark R. Franklin - Valencia CA, US
Tony C. Chiang - Oak Park CA, US
Dominic S. Nuccitelli - Granada Hills CA, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

H01H 37/48
F28F 27/00
F25D 29/00

US Classification:

337394, 165276, 62383

Abstract:

A thermal switch selectively couples a heat source to a pair of heat sinks. The thermal switch includes a shunt that is thermally coupled to the heat source. The shunt has a pair of posts. End portions of the posts are at least partially radially surrounded by respective cups. The cups in turn are thermally coupled to respective of the heat sinks. The cups are made of a material with a larger coefficient of thermal expansion than the material of the posts. Activation of one of the heat sinks causes the cup corresponding to that heat sink to contract, bringing it into contact with the corresponding post of the shunt. This opens a heat path through the switch from the heat source to the activated heat sink. Thermal isolation of the second cup is facilitated by an axial isolator of high thermal impedance, facilitating isolation of the inactive heat sink.

US Patent:

7544398, Jun 9, 2009

Filed:

Apr 26, 2006

Appl. No.:

11/411425

Inventors:

Jane P. Chang - Los Angeles CA, US
Trinh Tu Van - Portland OR, US
Tony Chiang - Campbell CA, US
Chandra Deshpandey - Fremont CA, US
Karl Lesser - San Jose CA, US

Assignee:

The Regents of the Univesity of California - Los Angeles CA

International Classification:

H05H 1/24

US Classification:

427537, 437539, 117 84, 117108

Abstract:

The invention relates to methods for producing doped thin layers on substrates comprising the steps of depositing a dopant precursor on the substrate via an atomic layer deposition technique; and exposing the deposited dopant precursor to radicals. The methods can further comprise depositing a compound adjacent the dopant metal via an atomic layer deposition technique; and exposing the deposited compound to radicals, thereby providing a host. The invention relates to articles comprising approximately atomically thin layers of metals or metal oxides doped with at least one different metal or metal oxide. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.