Tony C Chiang

US Patent:

7544398, Jun 9, 2009

Filed:

Apr 26, 2006

Appl. No.:

11/411425

Inventors:

Jane P. Chang - Los Angeles CA, US
Trinh Tu Van - Portland OR, US
Tony Chiang - Campbell CA, US
Chandra Deshpandey - Fremont CA, US
Karl Lesser - San Jose CA, US

Assignee:

The Regents of the Univesity of California - Los Angeles CA

International Classification:

H05H 1/24

US Classification:

427537, 437539, 117 84, 117108

Abstract:

The invention relates to methods for producing doped thin layers on substrates comprising the steps of depositing a dopant precursor on the substrate via an atomic layer deposition technique; and exposing the deposited dopant precursor to radicals. The methods can further comprise depositing a compound adjacent the dopant metal via an atomic layer deposition technique; and exposing the deposited compound to radicals, thereby providing a host. The invention relates to articles comprising approximately atomically thin layers of metals or metal oxides doped with at least one different metal or metal oxide. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.