Tony Duy Tran

US Patent:

20010039166, Nov 8, 2001

Filed:

Jan 18, 2001

Appl. No.:

09/764817

Inventors:

Tony Tran - Newark DE, US
Vikas Sachan - Hockessin DE, US
David Gettman - Fresno CA, US
Terence Thomas - Newark DE, US
Craig Lack - Wilmington DE, US
Peter Burke - Avondale PA, US

International Classification:

B24B001/00

US Classification:

451/036000, 451/041000

Abstract:

A method for polishing a surface of metal on a semiconductor substrate by using a polishing pad and hydrogen peroxide, and removing particles of metal from the semiconductor substrate by polishing, and dissolving the particles in the quantity of hydrogen peroxide.

US Patent:

20210163787, Jun 3, 2021

Filed:

Feb 8, 2021

Appl. No.:

17/170026

Inventors:

- Newark DE, US
Tony Quan Tran - Bear DE, US

International Classification:

C09G 1/02
B24B 37/04
C23F 1/00
H01L 21/321

Abstract:

A neutral to alkaline chemical mechanical composition for polishing tungsten includes, as initial components: water; an oxidizing agent selected from an iodate compound, a periodate compound and mixtures thereof; colloidal silica abrasive particles including a nitrogen-containing compound; optionally, a pH adjusting agent; and, optionally, a biocide. The chemical mechanical polishing method includes providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the neutral to alkaline chemical mechanical polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate and, further, to at least inhibit static etch of the tungsten.

US Patent:

20200381258, Dec 3, 2020

Filed:

Aug 21, 2020

Appl. No.:

16/999941

Inventors:

- Newark DE, US
Tony Quan Tran - Bear DE, US
Jeffrey James Hendron - Elkton MD, US
Jeffrey Robert Stack - Clayton DE, US

International Classification:

H01L 21/304
B24B 37/26
B24B 37/00
C09G 1/02
C09K 3/14
H01L 21/02
H01L 21/3105
H01L 21/321
H01L 21/67

Abstract:

The polishing pad is suitable for polishing or planarizing a wafer of at least one of semiconductor, optical and magnetic substrates. The polishing pad includes radial feeder grooves in a polishing layer separating the polishing layer into polishing regions. The radial feeder grooves extend at least from a location adjacent the center to a location adjacent the outer edge of the polishing pad. Each polishing region including a series of biased grooves that connects a pair of adjacent radial feeder grooves. A majority of the biased grooves having either an inward bias toward the center of the polishing pad or an outward bias for directing polishing fluid toward the outer edge of the polishing pad.

US Patent:

20200010726, Jan 9, 2020

Filed:

Jul 3, 2018

Appl. No.:

16/026175

Inventors:

- Newark DE, US
Tony Quan Tran - Bear DE, US

International Classification:

C09G 1/02
B24B 37/04

Abstract:

A neutral to alkaline chemical mechanical composition for polishing tungsten includes, as initial components: water; an oxidizing agent selected from an iodate compound, a periodate compound and mixtures thereof; colloidal silica abrasive particles including a nitrogen-containing compound; optionally, a pH adjusting agent; and, optionally, a biocide. The chemical mechanical polishing method includes providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the neutral to alkaline chemical mechanical polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate and, further, to at least inhibit static etch of the tungsten.

US Patent:

20180361532, Dec 20, 2018

Filed:

Oct 5, 2017

Appl. No.:

15/725876

Inventors:

- Newark DE, US
Tony Quan Tran - Bear DE, US
Jeffrey James Hendron - Elkton MD, US
Jeffrey Robert Stack - Clayton DE, US

International Classification:

B24B 37/26
B24B 37/04
H01L 21/3105

Abstract:

The invention provides a method for polishing or planarizing a wafer of at least one of semiconductor, optical and magnetic substrates. The method includes rotating a polishing pad having radial feeder grooves in the polishing layer separating the polishing layer into polishing regions. The radial feeder grooves include a series of biased grooves connecting a pair of adjacent radial feeder grooves. A majority of the biased grooves have either an inward bias toward the center or an outward bias toward the outer edge of the polishing pad. Pressing and rotating the wafer against the rotating polishing pad for multiple rotations of the polishing pad at a fixed distance from the center of the polishing pad increases polishing or planarizing removal rate of the wafer.

US Patent:

20180361533, Dec 20, 2018

Filed:

Oct 5, 2017

Appl. No.:

15/725987

Inventors:

- Newark DE, US
Tony Quan Tran - Bear DE, US
Jeffrey James Hendron - Elkton MD, US
Jeffrey Robert Stack - Clayton DE, US

International Classification:

B24B 37/26

Abstract:

The polishing pad is suitable for polishing or planarizing a wafer of at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a polishing layer having a polymeric matrix and radial feeder grooves in the polishing layer separating the polishing layer into polishing regions. The radial feeder grooves extend at least from a location adjacent the center to a location adjacent the outer edge of the polishing pad. Each polishing region includes a series of spaced non-isosceles trapezoid groove structures having parallel base segments connecting two adjacent radial feeder grooves to form leg segments. The series of non-isosceles trapezoid groove structures extend from adjacent the outer edge toward the center of the polishing pad with the perimeter of the series of trapezoid structures also being a trapezoid.

US Patent:

20180366331, Dec 20, 2018

Filed:

Oct 5, 2017

Appl. No.:

15/725836

Inventors:

- Newark DE, US
Tony Quan Tran - Bear DE, US
Jeffrey James Hendron - Elkton MD, US
Jeffrey Robert Stack - Clayton DE, US

International Classification:

H01L 21/304
H01L 21/321
H01L 21/3105
C09G 1/02
C09K 3/14
H01L 21/02
H01L 21/67
B24B 37/26
B24B 57/02

Abstract:

The invention provides a method for polishing or planarizing a wafer of at least one of semiconductor, optical and magnetic substrates. The method includes rotating a polishing pad having radial feeder grooves in a polishing layer separating the polishing layer into polishing regions. The radial feeder grooves extend at least from a location adjacent the center to a location adjacent the outer edge. Each polishing region includes a series of biased grooves connecting a pair of adjacent radial feeder grooves. The series of biased grooves separate a land area and have inner walls closer to the center and outer walls closer to the outer edge. Pressing and rotating the wafer against the rotating polishing pad for multiple rotations polishes or planarizes the wafer with land areas wet by the overflowing polishing fluid.

US Patent:

20180366332, Dec 20, 2018

Filed:

Oct 5, 2017

Appl. No.:

15/725936

Inventors:

- Newark DE, US
Tony Quan Tran - Bear DE, US
Jeffrey James Hendron - Elkton MD, US
Jeffrey Robert Stack - Clayton DE, US

International Classification:

H01L 21/304
H01L 21/321
C09G 1/02
H01L 21/3105
C09K 3/14
H01L 21/02
H01L 21/67

Abstract:

The invention provides a method for polishing or planarizing a wafer of at least one of semiconductor, optical and magnetic substrates. The method includes rotating a polishing pad, the rotating polishing pad having radial feeder grooves in the polishing layer separating the polishing layer into polishing regions. The polishing regions are circular sectors defined by two adjacent radial feeder grooves. The radial feeder grooves extend from a location adjacent the center to a location adjacent the outer edge. Each polishing region includes a series of biased grooves connecting a pair of adjacent radial feeder grooves. Pressing and rotating the wafer against the rotating polishing pad for multiple rotations of the polishing pad adjusts polishing by either increasing or decreasing residence time of the polishing fluid under the wafer.