Tuan Duc Ngo

US Patent:

6361645, Mar 26, 2002

Filed:

Oct 8, 1998

Appl. No.:

09/169017

Inventors:

Alan M. Schoepp - Ben Lomond CA
Robert E. Knop - Fremont CA
Christopher H. Olson - El Dorado CA
Michael S. Barnes - San Ramon CA
Tuan M. Ngo - Milpitas CA

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H02N 1300

US Classification:

156345, 118723 E, 118728, 118500, 20429803, 20429808, 20429832, 20429834, 361234, 323234, 323304, 323318, 324109

Abstract:

Disclosed is a method and device for compensating a bias voltage on a wafer disposed over an electrostatic chuck in a processing chamber of a plasma processing system. The plasma processing system includes an electrostatic and RF power supplies that are coupled to the electrostatic chuck. The bias compensation device includes a voltage converter, a storage unit, and a voltage adjusting circuitry. The voltage converter is coupled to the electrostatic chuck for detecting a voltage Vpp of the electrostatic chuck. The voltage converter converts the detected voltage to a lower voltage Vref. The storage unit stores a predetermined slope and a predetermined offset of a calibration curve, which is derived by fitting a plurality of wafer bias voltages as a function of electrostatic chuck voltages.

US Patent:

6526355, Feb 25, 2003

Filed:

Mar 30, 2000

Appl. No.:

09/539312

Inventors:

Tuqiang Ni - Fremont CA
Tuan Ngo - Milpitas CA
Chung-Ho Huang - Fremont CA
Andrew Lui - Fremont CA
Farro Kaveh - Palo Alto CA

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

G06F 1900

US Classification:

702 32, 702 31, 31511121

Abstract:

A process chamber with a computer system that controls the process chamber is connected to one or more spectrometers. The spectrometers may be part of an interferometer or may be an optical emission spectrometer. The spectrometers may be CCD or photodiode arrays of 2,048 elements. An input board forms part of the computer system and is directly connected to the spectrometers. The input board provides data from the spectrometers to dual port memory, which is directly accessible to the CPU of the computer system. The use of a state machine and adder on the input board allows computation and placement of the data from the spectrometers on to the dual port memory, so that the CPU is not needed for such placement.

US Patent:

6622286, Sep 16, 2003

Filed:

Jun 30, 2000

Appl. No.:

09/608599

Inventors:

Tuan Ngo - Milpitas CA
Farro Kaveh - Palo Alto CA
Connie Lam - Los Altos CA
Chung-Ho Huang - Fremont CA
Tuqiang Ni - Fremont CA
Anthony T. Le - San Jose CA
Steven Salkow - Pleasanton CA

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

G06F 1750

US Classification:

716 1, 716 19, 700121

Abstract:

A central controller for use in a semiconductor manufacturing equipment integrates a plurality of controllers with an open architecture allowing real-time communication between the various control loops. The central controller includes at least one central processing unit (CPU) executing high level input output (i/o) and control algorithms and at least one integrated i/o controller providing integrated interface to sensors and control hardware. The integrated i/o controller performs basic i/o and low level control functions and communicates with the CPU through a bus to perform or enable controls of various subsystems of the semiconductor manufacturing equipment.

US Patent:

8192576, Jun 5, 2012

Filed:

May 23, 2007

Appl. No.:

11/805607

Inventors:

Andras Kuthi - Thousand Oaks CA, US
Stephen Hwang - Fremont CA, US
James C. Vetter - Pine Grove CA, US
Greg Eilenstine - Pleasanton CA, US
Rongping Wang - Cupertino CA, US
Tuan Ngo - Milpitas CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01L 21/00
C23C 16/00
C23C 14/00

US Classification:

15634528, 15634524, 15634525, 15634526, 118712

Abstract:

Apparatus and methods are provided to detect and control a voltage potential applied in a plasma chamber for processing a semiconductor wafer. The plasma chamber includes circuitry for monitoring and adjusting a pulsed RF bias voltage signal to be applied to a chuck in the plasma chamber, where the chuck is configured to mount the wafer for processing. The circuitry includes an RF bias voltage detector for detecting individual pulses of the pulsed RF bias voltage signal applied to the chuck. A timing circuit is provided for determining a time for sampling each of the individual detected pulses and a sample and hold circuit. The sample and hold circuit is triggered at the sampling time for sampling each of the individual detected pulses to determine and hold a voltage value representing a peak peak-to-peak voltage value of each individual detected pulse, and the sample and hold circuit is configured to provide a feedback signal representing the peak peak-to-peak voltage value of at least one of the detected pulses. Further included is a feedback circuit for adjusting the voltage of the pulsed RF bias voltage signal applied to the chuck according to a difference between the feedback signal and a desired voltage value of the RF bias voltage signal.

US Patent:

8303763, Nov 6, 2012

Filed:

Apr 25, 2012

Appl. No.:

13/456122

Inventors:

Andras Kuthi - Thousand Oaks CA, US
Stephen Hwang - Fremont CA, US
James C. Vetter - Pine Grove CA, US
Greg Eilenstine - Pleasanton CA, US
Rongping Wang - Cupertino CA, US
Tuan Ngo - Milpitas CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01L 21/00
C23C 16/00
C23C 14/00

US Classification:

15634528, 15634524, 15634525, 15634526, 118712, 118723 E

Abstract:

Apparatus and methods are provided for monitoring a pulsed RF bias signal applied to a chuck in a processing chamber. One method includes operations for detecting voltage values of individual pulses of the pulsed RF bias voltage, and for determining the time for sampling the value of each individual detected pulse. At the sampling time for each pulse, a particular voltage value of the respective individual detected pulse is sampled and the particular voltage value is held. Each particular voltage value represents a characteristic peak-to-peak voltage value of each individual detected pulse. A feedback signal representing the characteristic peak-to-peak voltage value for a voltage envelope of one of the individual detected pulses is generated, and the voltage of the pulsed RF bias voltage signal applied to the chuck is adjusted according to a difference between the feedback signal and a desired voltage value of the pulsed RF bias voltage signal.

US Patent:

20130050892, Feb 28, 2013

Filed:

Oct 29, 2012

Appl. No.:

13/663393

Inventors:

Andras Kuthi - Thousand Oaks CA, US
Stephen Hwang - Fremont CA, US
James C. Vetter - Pine Grove CA, US
Greg Eilenstine - Pleasanton CA, US
Rongping Wang - Cupertino CA, US
Tuan Ngo - Milpitas CA, US

International Classification:

H01L 21/683

US Classification:

361234

Abstract:

Apparatus and methods are provided for monitoring a pulsed RF bias signal applied to a chuck in a processing chamber. One method includes operations for detecting voltage values of individual pulses of the pulsed RF bias voltage, and for determining the time for sampling the value of each individual detected pulse. At the sampling time for each pulse, a particular voltage value of the respective individual detected pulse is sampled and the particular voltage value is held. Each particular voltage value represents a characteristic peak-to-peak voltage value of each individual detected pulse. A feedback signal representing the characteristic peak-to-peak voltage value for a voltage envelope of one of the individual detected pulses is generated, and the voltage of the pulsed RF bias voltage signal applied to the chuck is adjusted according to a difference between the feedback signal and a desired voltage value of the pulsed RF bias voltage signal.

US Patent:

59297174, Jul 27, 1999

Filed:

Jan 9, 1998

Appl. No.:

9/005146

Inventors:

Brett C. Richardson - San Ramon CA
Tuan Ngo - Milpitas CA

Assignee:

LAM Research Corporation - Fremont CA

International Classification:

H03H 740

US Classification:

333 173

Abstract:

Variable reactances of a matching network connected between an r. f. source and a plasma load of a vacuum plasma chamber processing a workpiece are varied so a tendency of the plasma to change in an unstable manner which can adversely affect processing of the workpiece is avoided while matching is approached. The plasma tendency to change in an unstable manner is detected by monitoring an electrical parameter resulting from r. f. current flowing between the source and load via the network. The parameter can be (1) statistically based, e. g. variance of percent delivered power, or (2) amplitude modulation in one or both of the 2-20 kHz and 50-200 kHz ranges.

US Patent:

45070784, Mar 26, 1985

Filed:

Mar 28, 1983

Appl. No.:

6/479197

Inventors:

Johann Tam - Saratoga CA
Jalal Ashjaee - Mountain View CA
Nobuo B. Kuwaki - San Jose CA
Tuan M. Ngo - Milpitas CA
Susan W. Kung - Oakland CA

Assignee:

Silicon Valley Group, Inc. - San Jose CA

International Classification:

F27D 300
F27B 914
B65G 4300
B65G 1500

US Classification:

432 11

Abstract:

A wafer handling method and apparatus insures proper centering of a wafer at a work station and controls the heat transferred to the wafer in a baking operation. The amount of heat transferred and the rate at which the heat is transferred to the wafer are regulated by controlling the distance between the wafer and a hot plate. The hot plate is maintained at a constant temperature higher than the bake out or equilibrium temperature to which the wafer is to be heated.

Address:

2643 Senter Rd STE B, San Jose, CA 95111

Phone:

(408)2277205

VIN:

5FNYF28537B033776

Make:

HONDA

Model:

PILOT

Year:

2007