Vikram J Singh

US Patent:

6468384, Oct 22, 2002

Filed:

Nov 9, 2000

Appl. No.:

09/710083

Inventors:

Vikram Singh - Fremont CA
Robert J. Whiting - Santa Clara CA
Paul K. Shufflebotham - San Jose CA
Ajay Saproo - Mountain View CA

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

C23F 100

US Classification:

15634527, 15634524, 118723 E

Abstract:

The present invention provides plasma processing systems and methods for providing a set-point temperature for substrates during plasma processing by controlling clamping force or RF power. The plasma processing system includes a plasma chamber, a controller, and an electrostatic power supply. The plasma chamber is arranged to receive an RF power and a source gas for producing plasma. The plasma chamber includes an electrostatic chuck for clamping a substrate in place during plasma processing. The electrostatic chuck includes an electrode and a sensor, which is arranged to monitor temperature of the substrate being processed. The controller is coupled to the sensor to receive the substrate temperature and is configured to generate a control signal for driving the substrate temperature to the set-point temperature. The electrostatic power supply is coupled between the controller and the electrode in the electrostatic chuck. The electrostatic power supply receives the control signal from the controller and generates a voltage adapted to clamp the substrate with a clamping force.

US Patent:

6596654, Jul 22, 2003

Filed:

Nov 28, 2001

Appl. No.:

09/996619

Inventors:

Atiye Bayman - Palo Alto CA
Md Sazzadur Rahman - San Jose CA
Weijie Zhang - San Jose CA
Bart van Schravendijk - Sunnyvale CA
Vishal Gauri - San Jose CA
Vikram Singh - Fremont CA

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 2131

US Classification:

438788, 438778, 438786, 438787, 438790, 438791, 438792

Abstract:

Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1. 5 microns or less and even sub 0. 15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen as a process gas in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.

US Patent:

6787483, Sep 7, 2004

Filed:

May 20, 2003

Appl. No.:

10/442846

Inventors:

Atiye Bayman - Palo Alto CA
Md Sazzadur Rahman - San Jose CA
Weijie Zhang - San Jose CA
Bart van Schravendijk - Sunnyvale CA
Vishal Gauri - San Jose CA
Vikram Singh - Fremont CA

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 2131

US Classification:

438788, 438778, 438787, 438791, 438792, 438798

Abstract:

Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1. 5 microns or less and even sub 0. 15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen as a process gas in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.

US Patent:

6846745, Jan 25, 2005

Filed:

Jan 28, 2002

Appl. No.:

10/058897

Inventors:

George D. Papasouliotis - Cupertino CA, US
Vishal Gauri - San Jose CA, US
Raihan M. Tarafdar - San Jose CA, US
Vikram Singh - Fremont CA, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21322
H01L 21302
H01L 2131
H01L 2126

US Classification:

438706, 438475, 438710, 438714, 438723, 438782, 438783, 438798

Abstract:

Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1. 5 microns or less and even sub 0. 15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of both hydrogen and fluorine as process gases in the reactive mixture of a plasma-containing CVD reactor. The process gas also includes dielectric forming precursors such as silicon and oxygen-containing molecules.

US Patent:

7001854, Feb 21, 2006

Filed:

Oct 11, 2002

Appl. No.:

10/271333

Inventors:

George D. Papasouliotis - Cupertino CA, US
Md Sazzadur Rahman - Sherwood OR, US
Pin Sheng Sun - San Jose CA, US
Karen Prichard - Los Gatos CA, US
Lauren Hall - San Jose CA, US
Vikram Singh - Fremont CA, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21/31
H01L 21/469
H01L 21/311

US Classification:

438788, 438694, 438778, 438783, 438784, 438786

Abstract:

Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1. 5 microns or less and even sub 0. 13 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen and a phosphorus dopant precursor as process gasses in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.

US Patent:

7067440, Jun 27, 2006

Filed:

Jul 13, 2004

Appl. No.:

10/890655

Inventors:

Atiye Bayman - Palo Alto CA, US
Md Sazzadur Rahman - San Jose CA, US
Weijie Zhang - San Jose CA, US
Bart van Schravendijk - Sunnyvale CA, US
Vishal Gauri - San Jose CA, US
George D. Papasouliotis - Cupertino CA, US
Vikram Singh - Fremont CA, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21/00

US Classification:

438788, 438700, 438798

Abstract:

Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1. 5 microns or less and even sub 0. 15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen as a process gas in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.

US Patent:

7122485, Oct 17, 2006

Filed:

Dec 9, 2002

Appl. No.:

10/316987

Inventors:

George D. Papasouliotis - Cupertino CA, US
Edith Goldner - Sunnyvale CA, US
Vishal Gauri - San Jose CA, US
Md Sazzadur Rahman - South Field MI, US
Vikram Singh - Fremont CA, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21/31

US Classification:

438778, 438788

Abstract:

Disclosed are methods for modifying the topography of HDP CVD films by modifying the composition of the reactive mixture. The methods allow for deposition profile control independent of film deposition rate. They rely on changes in the process chemistry of the HDP CVD system, rather than hardware modifications, to modify the local deposition rates on the wafer. The invention provides methods of modifying the film profile by altering the composition of the reactive gas mixture, in particular the hydrogen content. In this manner, deposition profile and wiw uniformity are decoupled from deposition rate, and can be controlled without hardware modifications.

US Patent:

6042687, Mar 28, 2000

Filed:

Jun 30, 1997

Appl. No.:

8/885346

Inventors:

Vikram Singh - Fremont CA
Brian McMillin - Fremont CA
Tom Ni - Fremont CA
Michael Barnes - San Francisco CA
Richard Yang - Fremont CA

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H05H 100
H01L 2100

US Classification:

156345

Abstract:

A plasma processing system and method for processing substrates such as by chemical vapor deposition or etching. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a primary gas supply supplying a primary gas such as process gas into the chamber, a secondary gas supply supplying a secondary gas such as a substantially inert, a substrate passivating or a reactant scavenging gas into the chamber, and an RF energy source such as a planar coil which inductively couples RF energy through the dielectric member and into the chamber to energize the primary gas into a plasma state. The secondary gas is concentrated near the periphery of the substrate, improving etching/deposition uniformity across the substrate surface.