Wen K Chen

US Patent:

7991185, Aug 2, 2011

Filed:

Jul 2, 2007

Appl. No.:

11/772671

Inventors:

Wen Chen - Harrison NJ, US

Assignee:

New Jersey Institute of Technology - Newark NJ

International Classification:

G06K 9/00

US Classification:

382100

Abstract:

Embodiments of the invention are a novel splicing detection scheme that detects the spliced images by distinguishing image features that are extracted by exploiting both magnitude and phase information of a given image. The image features include the statistical moments of characteristic functions of wavelet subbands of a test image and a prediction-error image. In addition, the approximation (LL) subband at different levels is individually erased by forcing the wavelet coefficients to zero and the inverse wavelet transform is applied in order to produce reconstructed image with enhanced high frequency components. Further, the moments of the characteristic functions of these reconstructed images provide additional image features. Moreover, the statistics (mean, variance, skewness and kurtosis) of 2-D phase congruency array associated with the reconstructed images provide additional image features for splicing detection. These inputs provide a 120 dimensional image feature vector that includes 96 moment features and 24 phase features.

US Patent:

8041124, Oct 18, 2011

Filed:

Jan 18, 2007

Appl. No.:

11/624595

Inventors:

Yun Qing Shi - Millburn NJ, US
Wen Chen - Harrison NJ, US

Assignee:

New Jersey Institute of Technology - Newark NJ

International Classification:

G06K 9/62

US Classification:

382224, 382176, 382180, 382181, 382190, 382191, 382192, 382195, 382206, 382207, 345418, 345501, 345581

Abstract:

Computer graphics may be detected in digital images by extracting a first set of features from an input digital image, extracting a second set of features from a prediction-error image derived from the input digital image, and applying a classification algorithm to the first set of features and the second set of features to determine if the combined sets of features indicate that the input digital image corresponds to computer graphics.

US Patent:

8537892, Sep 17, 2013

Filed:

Apr 10, 2009

Appl. No.:

12/422138

Inventors:

Wen Chen - Harrison NJ, US
Yun-Qing Shi - Millburn NJ, US

Assignee:

New Jersey Institute of Technology - Newark NJ

International Classification:

H04N 7/12
H04N 11/02
H04N 11/04
G09G 5/00
G06K 9/36
G06K 9/46

US Classification:

37524008, 345629, 382232

Abstract:

Implementations of the detection of double MPEG compression using digit based statistics are disclosed.

US Patent:

RE319686, Aug 13, 1985

Filed:

Jun 14, 1984

Appl. No.:

6/620637

Inventors:

Reid A. Mickelsen - Bellevue WA
Wen S. Chen - Seattle WA

Assignee:

The Boeing Company - Seattle WA

International Classification:

H01L 3106
H01L 3118

US Classification:

136260

Abstract:

An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI. sub. 2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order ot about 2. 5 microns to about 5. 0 microns (. congruent. 2. 5. mu. m to. congruent. 5. 0. mu. m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U. S.

US Patent:

43352669, Jun 15, 1982

Filed:

Dec 31, 1980

Appl. No.:

6/221761

Inventors:

Reid A. Mickelsen - Bellevue WA
Wen S. Chen - Seattle WA

Assignee:

The Boeing Company - Seattle WA

International Classification:

H01L 3106
H01L 3118

US Classification:

136260

Abstract:

An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI. sub. 2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2. 5 microns to about 5. 0 microns (. congruent. 2. 5. mu. m to. congruent. 5. mu. m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U. S.

US Patent:

49735993, Nov 27, 1990

Filed:

Mar 14, 1989

Appl. No.:

7/323583

Inventors:

Norman W. Gilman - Wayne NJ
Wen Y. Chen - Nutley NJ

Assignee:

Hoffman-La Roche Inc. - Nutley NJ

International Classification:

C07D23384
A61K 31415

US Classification:

514398

Abstract:

Compounds of the formula ##STR1## wherein n is a integer of 0 to 2; R. sub. 1 ' and R. sub. 2 ' are, independently, hydrogen, halogen, trifluoromethyl, lower alkoxy or lower alkyl; and X is pyrimidinyl, thiazolyl or ##STR2## wherein R is hydrogen, lower alkyl, aryl or ar-lower alkyl; provided that at least one or R. sub. 1 ' and R. sub. 2 ' is other than hydrogen, and their pharmaceutically acceptable acid addition salts, and an anti-inflammatory method utilizing a compound of the formula ##STR3## wherein n is an integer of 0 to 2; R. sub. 1 and R. sub. 2 are, independently, hydrogen, halogen, trifluoromethyl, nitro, amino, lower alkylamino, di-lower-alkylamino, lower alkoxy or lower alkyl; and X is pyrimidinyl, thiazolyl or ##STR4## wherein R is hydrogen, lower alkyl, aryl or ar-lower alkyl; and their pharmaceutically acceptable acid addition salts, are described.

US Patent:

45230510, Jun 11, 1985

Filed:

Sep 27, 1983

Appl. No.:

6/536395

Inventors:

Reid A. Mickelsen - Bellevue WA
Wen S. Chen - Seattle WA

Assignee:

The Boeing Company - Seattle WA

International Classification:

H01L 3106
H01L 3118

US Classification:

136260

Abstract:

A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

US Patent:

51124106, May 12, 1992

Filed:

Aug 7, 1990

Appl. No.:

7/563494

Inventors:

Wen S. Chen - Seattle WA

Assignee:

The Boeing Company - Seattle WA

International Classification:

H01L 31072
H01L 3118
H01L 310328

US Classification:

136260

Abstract:

A process for depositing thin layers of a II-VI compound cadmium zinc sulfide (CdZnS) by an aqueous solution growth technique with quality suitable for high efficiency photovoltaic or other devices which can benefit from the band edge shift resulting from the inclusion of Zn in the sulfide. A first solution comprising CdCl. sub. 2 2. 5H. sub. 2 O, NH. sub. 4 Cl, NH. sub. 4 OH and ZnCl. sub. 2, and a second solution comprising thiourea ((NH. sub. 2). sub. 2 CS) are combined and placed in a deposition cell, along with a substrate to form a thin i. e. 10 nm film of CdZnS on the substrate. This process can be sequentially repeated with to achieve deposition of independent multiple layers having different Zn concentrations.