Jerome Tsu-Rong Chu - Orlando FL John D. LaBarre - Walnutport PA Wen Lin - Allentown PA Blair Miller - New Ringgold PA
Assignee:
Agere Systems Guardian Corp. - Orlando FL
International Classification:
H01L 2976
US Classification:
257531, 257328, 438369
Abstract:
The present invention provides for a method of manufacturing a simplified high Q inductor substrate and a semiconductor device having that substrate. The method for manufacturing the simplified high Q inductor substrate preferably includes forming a base substrate over a semiconductor wafer, wherein the base substrate has a given dopant concentration and then forming an epitaxial (EPI) layer over the base substrate. The EPI layer includes epitaxially forming a first doped region in the EPI layer over the base substrate and then epitaxially forming a second doped region in the EPI layer over the first doped region. The first doped region has a dopant concentration greater than the given dopant concentration of the base substrate, and the second doped region has a dopant concentration less than the first doped region.
Jerome Tsu-Rong Chu - Orlando FL John D. LaBarre - Walnutport PA Wen Lin - Allentown PA Blair Miller - New Ringgold PA
Assignee:
Agere Systems Guardian Corp. - Miami Lakes FL
International Classification:
H01L 21331
US Classification:
438369
Abstract:
The present invention provides for a method of manufacturing a simplified high Q inductor substrate and a semiconductor device having that substrate. The method for manufacturing the simplified high Q inductor substrate preferably comprises forming a base substrate over a semiconductor wafer, wherein the base substrate has a given dopant concentration and then forming an epitaxial (EPI) layer over the base substrate. The EPI layer includes epitaxially forming a first doped region in the EPI layer over the base substrate and then epitaxially forming a second doped region in the EPI layer over the first doped region. The first doped region has a dopant concentration greater than the given dopant concentration of the base substrate, and the second doped region has a dopant concentration less than the first doped region.
Medicine Doctors
Dr. Wen I Lin, Saint Augustine FL - MD (Doctor of Medicine)
Laser Urology 3100 Us Highway 1 S Suite 2, Saint Augustine, FL 32086 (904)7972921 (Phone)
3100 Us Highway 1 S, Saint Augustine, FL 32086 (904)7972921 (Phone)
400 Health Park Blvd, St Augustine, FL 32086 (904)8195155 (Phone)
Certifications:
Urology, 1981
Awards:
Healthgrades Honor Roll
Languages:
English Chinese
Hospitals:
Laser Urology 3100 Us Highway 1 S Suite 2, Saint Augustine, FL 32086
3100 Us Highway 1 S, Saint Augustine, FL 32086
400 Health Park Blvd, St Augustine, FL 32086
Flagler Hospital 400 Health Parks Boulevard, Saint Augustine, FL 32086
Education:
Medical School Kaohsiung Medical College Graduated: 1968 Medical School University Conn Affil Hosps Graduated: 1974 Medical School University Of Connecticut School Of Medicine Graduated: 1975 Medical School Saint Vincent's Medical Center Graduated: 1976 Medical School Veteran Affairs Medical Center Graduated: 1979
Dr. Lin graduated from the Chung Shan Med And Dental Coll, Taiching, Taiwan in 1976. He works in Mountain View, CA and specializes in Pediatrics and Neonatal-Perinatal Medicine. Dr. Lin is affiliated with El Camino Hospital and OConnor Hospital.
3100 Us Highway 1 S, Saint Augustine, FL 32086 1 Sadie Ct, Saint Augustine, FL 32095
Education:
Kaohsiung Medical University - Doctor of Medicine Dayton VA Medical Center - Residency - Urology John Dempsey Hospital-UCONN Health Center - Residency - Surgery
Board certifications:
American Board of Urology Certification in Urology