Xin M Zhu

US Patent:

7415400, Aug 19, 2008

Filed:

Oct 15, 2002

Appl. No.:

10/271931

Inventors:

Xin Hai Zhu - Pleasanton CA, US
Bradley N Maker - Danville CA, US

Assignee:

Livermore Software Technology Corporation - Livermore CA

International Classification:

G06G 7/48

US Classification:

703 7, 703 1, 703 2, 700 98

Abstract:

A system and method for designing stamping tools that produce parts of desired dimensions. The system and method compensate for post stamping deviations from the desired dimensions in the shape of the tools used to produce the parts. The compensated tools result in nearly ideal parts.

US Patent:

20060201229, Sep 14, 2006

Filed:

May 25, 2006

Appl. No.:

11/420444

Inventors:

Xin Zhu - Pleasanton CA, US
Bradley Maker - Danville CA, US

International Classification:

B21D 37/02

US Classification:

072413000

Abstract:

A system and method for designing stamping tools that produce parts of desired dimensions. The system and method compensate for post stamping deviations from the desired dimensions in the shape of the tools used to produce the parts. The compensated tools result in nearly ideal parts.

US Patent:

20100010782, Jan 14, 2010

Filed:

Jul 9, 2008

Appl. No.:

12/170267

Inventors:

Xin Hai Zhu - Pleasanton CA, US
John O. Hallquist - Livermore CA, US

Assignee:

LIVERMORE SOFTWARE TECHNOLOGY CORPORATION - Livermore CA

International Classification:

G06F 17/50
G06F 17/12

US Classification:

703 1, 703 2

Abstract:

Systems and methods of selecting a solver with appropriate numerical precision in each of a series of hierarchically related engineering simulations are described. According to an exemplary embodiment of the present invention, a series of hierarchically related engineering simulations comprises a sequence of finite element analyses for designing and analyzing a structural product. An input file describing the structural product and type of engineering simulation is received. Each different type of engineering simulations is checked to determine which solver with appropriate numerical precision (i.e., single or double precision) is used. A corresponding executable module (e.g., Finite Element Analysis software module) is then used for performing the analysis of that engineering simulation. The process repeats until all of the engineering simulations have been conducted in the entire sequence.

US Patent:

20100089450, Apr 15, 2010

Filed:

Oct 15, 2009

Appl. No.:

12/579422

Inventors:

Jun Yang - Cupertino CA, US
Xin Zhu - Fremont CA, US

International Classification:

H01L 31/00

US Classification:

136259

Abstract:

Disclosed herein is a concentrating photovoltaic system utilizing a lens/reflector array to spatially divide the incident sunlight into separate incoherent beams, and a principle optical element to superpose the separate beams that undergo near-field diffraction/transmission, and form a uniform illumination pattern on the photovoltaic (PV) cell with similar shape and size. The array and principle optical element can be flexibly disposed in the system as long as the near-field diffraction condition is satisfied. The PV cell is disposed close to the focus of the principle optical element, and the concentrated illumination pattern on the PV cell is nearly a geometric projection of individual lens/reflector in the array. The size of the pattern is controlled by changing the focal lengths of the array and principle optical element, the distance between them, and the size of individual lens/reflector in the array. The system is insensitive to component misalignment and has the advantage of achieving high concentration ratio and efficient energy conversion with relatively low cost and compact design.

US Patent:

20130014813, Jan 17, 2013

Filed:

Jan 11, 2012

Appl. No.:

13/347712

Inventors:

Weiming Wang - Ann Arbor MI, US
Xin Zhu - Fremont CA, US
Jun Yang - Cupertino CA, US

International Classification:

H01L 31/0336
H01L 31/18

US Classification:

136255, 438 94, 257E31007

Abstract:

The invention disclosed a method of fabricating GaInP/GaAs/Si triple junction solar cells by epitaxy lift-off and mechanical stack techniques. First, a GaInP(1.85 eV)/GaAs(1.42 eV) dual-junction cell is fabricated on a GaAs substrate, and a Si single junction is fabricated on a Si substrate. The Si single junction cell and the GaInP/GaAs dual-junction cell are joined together robustly by metal-metal bonding. A buffer layer, Gallium Phosphide (GaP) inserted between GaAs and Si can further optimize electrical, thermal and optical coupling. Furthermore, when a GaP layer is grown on a p-type Si substrate, a Si p-n junction as a fully functional solar cell is formed simultaneously, thereby reducing manufacturing cost. The technology can achieve GaInP/GaAs/Si triple junction solar cells of the conversion efficiency as high as 36% under a standard AM1.5 solar spectrum, with the optimal current 13.3 mA/cmand the sum of open-circuit voltages 3.1V.