Xing Lin (Chinese: ; pinyin: Xng Ln; born May 25, 1979 in Liaoning) is a female Chinese triathlete. Xing competed at the second Olympic triathlon at ...
- Almere, NL Rutvij Naik - Tempe AZ, US Xing Lin - Chandler AZ, US Alexandros Demos - Scottsdale AZ, US
International Classification:
H01L 21/67 C23C 16/48 G02B 5/02
Abstract:
A reflector includes a reflector body arranged to overlap a reaction chamber of a semiconductor processing system. The reflector body has a grooved surface and a reflective surface extending between a first longitudinal edge of the reflector body and a second longitudinal edge of the reflector body, the reflective surface spaced apart from the grooved surface by a thickness of the reflector body. The grooved surface and the reflective surface define a pyrometer port, two or more elongated slots, and two or more shortened extending through the thickness of the reflector body. The shortened slots outnumber the elongated slots to bias issue of a coolant against the reaction chamber toward the second longitudinal edge of the reflector body. Cooling kits, semiconductor processing systems, and methods of cooling a reaction chamber during deposition of a film onto a substrate supported within the reaction chamber are also described.
- Almere, NL Junwei Su - Tempe AZ, US Xing Lin - Chandler AZ, US Alexandros Demos - Scottsdale AZ, US Rutvij Naik - Tempe AZ, US Wentao Wang - Chandler AZ, US Matthew Goodman - Chandler AZ, US Robin Scott - Phoenix AZ, US Robinson James - Phoenix AZ, US Caleb Miskin - Mesa AZ, US
International Classification:
H01L 21/687 C23C 16/52 C23C 16/458
Abstract:
A susceptor has a circular pocket portion, an annular ledge portion, and an annular rim ledge portion. The circular pocket portion is arranged along a rotation axis and has a perforated surface. The annular ledge portion extends circumferentially about pocket portion and has ledge surface that slopes axially upward from the perforated surface. The rim portion extends circumferentially about the ledge portion and is connected to the pocket portion by the ledge portion of the susceptor. The susceptor has one or more of a tuned pocket, a contact break, a precursor vent, and a purge channel located radially outward of the perforated surface to control deposition of a film onto a substrate supported by the susceptor. Semiconductor processing systems, film deposition methods, and methods of making susceptors are also described.
Wafer Temperature Gradient Control To Suppress Slip Formation In High-Temperature Epitaxial Film Growth
- Almere, NL Alexandros Demos - Scottsdale AZ, US Xing Lin - Chandler AZ, US Junwei Su - Tempe AZ, US Matthew Goodman - Chandler AZ, US Daw Gen Lim - Tempe AZ, US Shujin Huang - Tempe AZ, US Rutvij Naik - Tempe AZ, US
A method of operating a reactor system to provide wafer temperature gradient control is provided. The method includes operating a center temperature sensor, a middle temperature sensor, and an edge temperature sensor to sense a temperature of a center zone of a wafer on a susceptor in reaction chamber of the reactor system, to sense a temperature of a middle zone of the wafer, and to sense a temperature of an edge zone of the wafer. The temperatures of the center, middle, and edge zones of the wafer are processed with a controller to generate control signals based on a predefined temperature gradient for the wafer. First, second, and third sets of heater lamps are operated based on the temperature of the center, middle, and edge zones to heat the center, the middle, and the edge zone of the wafer. Reactor systems are also described.
Semiconductor Processing Preclean Methods And Apparatus
- Almere, NL Aditya Chaudhury - Tempe AZ, US Prahlad Kulkarni - Tempe AZ, US Xing Lin - Chandler AZ, US Xiaoda Sun - Tempe AZ, US Woo Jung Shin - Chandler AZ, US Fei Wang - Portland OR, US Qu Jin - Chandler AZ, US Aditya Walimbe - Tempe AZ, US Rajeev Reddy Kosireddy - Tempe AZ, US Yen Chun Fu - Tempe AZ, US Amin Azimi - Phoenix AZ, US
International Classification:
H01L 21/02 H01L 21/311 B08B 5/00 H01L 21/67
Abstract:
In some embodiments, a method for semiconductor processing preclean includes removing an oxide layer from a substrate using anhydrous hydrogen fluoride in combination with water vapor. A system for the preclean may be configured to separate the anhydrous hydrogen fluoride and the water vapor until they are delivered to a common volume near the substrate. Corrosion within components of the system may be limited by purification of anhydrous hydrogen fluoride, passivation of components, changing component materials, and heating components. Passivation may be achieved by filling a gas delivery component with anhydrous hydrogen fluoride and allowing the anhydrous hydrogen fluoride to remain in the gas delivery component to form a passivation layer. Consistent water vapor delivery may be achieved in part by heating components using heaters.
Dual Pyrometer Systems For Substrate Temperature Control During Film Deposition
- Almere, NL Kai Zhou - Phoenix AZ, US Peipei Gao - Tempe AZ, US Wentao Wang - Phoenix AZ, US Kishor Patil - Chandler AZ, US Fan Gao - Tempe AZ, US Krishnaswamy Mahadevan - Phoenix AZ, US Xing Lin - Chandler AZ, US Alexandros Demos - Scottsdale AZ, US
International Classification:
H01L 21/67 H01L 21/66 C23C 16/46 C23C 16/52
Abstract:
A method of operating a reactor system to provide multi-zone substrate temperature control. The method includes, with a first pyrometer, sensing a temperature of a first zone of a substrate supported in the reactor system, and, with a second pyrometer, sensing a temperature of a second zone of the substrate. The method further includes, with a controller, comparing the temperatures of the first and second zones to setpoint temperatures for the first and second zones and, in response, generating control signals to control heating of the substrate. The method also includes controlling, based on the control signals, operations of a heater assembly operating to heat the substrate.
Wafer Far Edge Temperature Measurement System With Lamp Bank Alignment
- Almere, NL Shujin Huang - Tempe AZ, US Junwei Su - Tempe AZ, US Xing Lin - Chandler AZ, US
International Classification:
H01L 21/67 H05B 31/00
Abstract:
A reactor system designed to provide accurate monitoring of wafer temperatures during deposition steps. The reactor system includes a pyrometer mounting assembly supporting and positioning three or more pyrometers (e.g., infrared (IR) pyrometers) relative to the reaction chamber to measure a center wafer temperature and an edge wafer temperature as well as reaction chamber temperature. The pyrometer mounting assembly provides a small spot size or temperature sensing area with the edge pyrometer to accurately measure edge wafer temperatures. A jig assembly, and installation method for each tool setup, is provided for use in achieving accurate alignment of the IR pyrometer sensing spot (and the edge pyrometer) relative to the wafer, when the pyrometer mounting assembly is mounted upon a lamp bank in the reactor system or in tool setup. The wafer edge temperature sensing with the reactor system assembled with proper alignment ensures accurate and repeatable measurement of wafer temperatures.
Fixture And Method For Determining Position Of A Target In A Reaction Chamber
- Almere, NL Peipei Gao - Chandler AZ, US Xing Lin - Chandler AZ, US Alexandros Demos - Scottsdale AZ, US Kishor Patil - Chandler AZ, US
International Classification:
H01L 21/67 C23C 16/458 C23C 16/455
Abstract:
A fixture includes a frame, a leveling plate, a bracket, and a laser profiler. The frame is arranged for fixation above a reaction chamber arranged to deposit a film onto a substrate. The leveling plate is supported on the frame. The bracket is supported on the leveling plate. The laser profiler is suspended from the bracket, overlays the reaction chamber, and has a field of view that extends through the leveling plate and the frame to determine position of a target within the reaction chamber. Semiconductor processing systems and methods of determining position of targets within reaction chambers in semiconductor processing systems are also described.
- Almere, NL Wentao Wang - Chandler AZ, US Xing Lin - Chandler AZ, US Han Ye - Phoenix AZ, US Ion Hong Chao - Gilbert AZ, US Siyao Luan - Phoenix AZ, US Alexandros Demos - Scottsdale AZ, US Fan Gao - Chandler AZ, US
International Classification:
H01L 21/687
Abstract:
A substrate support and lift assembly configured to support and lift a substrate from a susceptor is disclosed. The substrate support and lift assembly can include a susceptor support and a lift pin. The susceptor support can be configured to support the susceptor thereon. The susceptor support includes a plurality of support arms each extending radially from a central portion of the susceptor support to a terminus. Each of the plurality of support arms includes an aperture extending therethrough. The lift pin can be configured to fit through the aperture of a corresponding support arm to lift a substrate on the susceptor.