Yang Wang

US Patent:

60620706, May 16, 2000

Filed:

Oct 29, 1996

Appl. No.:

8/741408

Inventors:

Frederick L. Maltby - Jenkintown PA
Yang Wang - Bensalem PA
Norman Nardelli - Morristown NJ
L. Jonathan Kramer - Warminster PA

Assignee:

Drexelbrook Controls, Inc. - Horsham PA

International Classification:

G01N 2902
G01S 1514

US Classification:

73 6149

Abstract:

A sludge blanket level is determined in a waste water treatment clarifier using sonic pulse reflections. Additionally, using similar techniques, the clarity of the waste water is determined. A sonic pulse is directed into the waste water. Echos are generated as the pulse encounters the impedance mismatches indicative of changes in the density of the water. The echos are compensated for attenuation as a function of travel time through the water, energy lost due to prior peak reflections, and are processed to remove random signals using correlation techniques. A sludge blanket is selected from the compensated echo signal as a function of the size and location of echo peaks. Additionally, the clarity is determined as a flnction of the area under the echo signal between two points corresponding to predefined levels in the clarifier tank.

US Patent:

62129430, Apr 10, 2001

Filed:

Dec 21, 1999

Appl. No.:

9/468434

Inventors:

Frederick L. Maltby - Jenkintown PA
Yang Wang - Bensalem PA
Norman Nardelli - Morristown NJ
L. Jonathan Kramer - Warminster PA

Assignee:

Ametek, Inc. - Paoli PA

International Classification:

G01N 2902
G01S 1514

US Classification:

73 6149

Abstract:

A sludge blanket level is determined in a waste water treatment clarifier using sonic pulse reflections. Additionally, using similar techniques, the clarity of the waste water is determined. A sonic pulse is directed into the waste water. Echos are generated as the pulse encounters the impedance mismatches indicative of changes in the density of the water. The echos are compensated for attenuation as a function of travel time through the water, energy lost due to prior peak reflections, and are processed to remove random signals using correlation techniques. A sludge blanket is selected from the compensated echo signal as a function of the size and location of echo peaks. Additionally, the clarity is determined as a function of the area under the echo signal between two points corresponding to predefined levels in the clarifier tank.

US Patent:

20210102092, Apr 8, 2021

Filed:

Feb 21, 2019

Appl. No.:

16/971873

Inventors:

- Fremont CA, US
- Paris, FR
Manish KHANDELWAL - Somerset NJ, US
Cole RITTER - Easton PA, US
Peng ZHANG - Montvale PA, US
Jean-Marc GIRARD - Versailles, FR
Zhiwen WAN - Plano TX, US
Glenn KUCHENBEISER - Fremont CA, US
David ORBAN - Hampton NJ, US
Sean KERRIGAN - Princeton NJ, US
Reno PESARESI - Easton PA, US
Matthew Damien STEPHENS - Morristown NJ, US
Yang WANG - Garnet Valley PA, US
Guillaume HUSSON - Newark DE, US
Grigory NIKIFOROV - Bridgewater NJ, US

International Classification:

C09D 183/16
C08G 77/62
C08J 5/18
C08F 4/72

Abstract:

A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N—H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N—H free repeating units having the formula [—N(SiH)×(SiH)], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.

US Patent:

20200277190, Sep 3, 2020

Filed:

Mar 11, 2020

Appl. No.:

16/815646

Inventors:

- Paris, FR
- Fremont CA, US
Manish Khandelwal - Somerset NJ, US
Cole Ritter - Easton PA, US
Peng Zhang - Montvale NJ, US
Jean-Marc Girard - Versailles, FR
Zhiwen Wan - Plano TX, US
Glenn Kuchenbeiser - Newark DE, US
David Orban - Hampton NJ, US
Sean Kerrigan - Princeton NJ, US
Reno Pesaresi - Easton PA, US
Matthew Damien Stephens - Easton PA, US
Yang Wang - Glen Mills PA, US
Guillaume Husson - Wilmington DE, US

International Classification:

C01B 21/087
C04B 35/589
C04B 35/597
C04B 35/14
C09D 1/00
C01B 21/082
B05D 1/02
B05D 1/00
B05D 1/18
C23C 16/24
C04B 35/571
C04B 35/56
C09D 183/16
C23C 18/12
C08G 77/62
C23C 16/455

Abstract:

Solid or liquid N—H free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [—N(SiH)(SiH—)], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.

US Patent:

20200223703, Jul 16, 2020

Filed:

Mar 23, 2020

Appl. No.:

16/827186

Inventors:

- Paris, FR
- Fremont CA, US
Gennadiy ITOV - Flemington NJ, US
Yang WANG - Garnet Valley PA, US

International Classification:

C01B 33/04
B01J 23/02
B01J 31/14
B01J 31/02
C08G 77/60

Abstract:

Synthesis of silanes with more than three silicon atoms are disclosed (i.e., (SiHwith n=4-100). More particularly, the disclosed synthesis methods tune and optimize the isomer ratio by selection of process parameters such as temperature, residence time, and the relative amount of starting compounds, as well as selection of proper catalyst. The disclosed synthesis methods allow facile preparation of silanes containing more than three silicon atoms and particularly, the silanes containing preferably one major isomer. The pure isomers and isomer enriched mixtures are prepared by catalytic transformation of silane (SiH), disilane (SiH), trisilane (SiH), and mixtures thereof.

US Patent:

20200115239, Apr 16, 2020

Filed:

Oct 11, 2018

Appl. No.:

16/158089

Inventors:

- Paris, FR
- Fremont CA, US
Gennadiy Itov - Flemington NJ, US
Yang Wang - Garnet Valley PA, US

International Classification:

C01B 33/04
B01J 31/02
C08G 77/60
B01J 31/14
B01J 23/02

Abstract:

Synthesis of silanes with more than three silicon atoms are disclosed (i.e., (SiHwith n=4−100). More particularly, the disclosed synthesis methods tune and optimize the isomer ratio by selection of process parameters such as temperature, residence time, and the relative amount of starting compounds, as well as selection of proper catalyst. The disclosed synthesis methods allow facile preparation of silanes containing more than three silicon atoms and particularly, the silanes containing preferably one major isomer. The pure isomers and isomer enriched mixtures are prepared by catalytic transformation of silane (SiH), disilane (SiH), trisilane (SiH), and mixtures thereof.

US Patent:

20200115240, Apr 16, 2020

Filed:

Oct 11, 2018

Appl. No.:

16/158117

Inventors:

- Paris, FR
- Fremont CA, US
Gennadiy ITOV - Flemington NJ, US
Yang WANG - Garnet Valley PA, US

International Classification:

C01B 33/04
B01J 31/02

Abstract:

Synthesis of silanes with more than three silicon atoms are disclosed (i.e., (SiHwith n=4-100). More particularly, the disclosed synthesis methods tune and optimize the isomer ratio by selection of process parameters such as temperature, residence time, and the relative amount of starting compounds, as well as selection of proper catalyst. The disclosed synthesis methods allow facile preparation of silanes containing more than three silicon atoms and particularly, the silanes containing preferably one major isomer. The pure isomers and isomer enriched mixtures are prepared by catalytic transformation of silane (SiH), disilane (SiH), trisilane (SiH), and mixtures thereof.

US Patent:

20190187532, Jun 20, 2019

Filed:

Aug 24, 2017

Appl. No.:

16/328399

Inventors:

- Austin TX, US
Yang Wang - Newark DE, US

International Classification:

G02F 1/1523
G02F 1/155
G02F 1/163
G02F 1/153

Abstract:

Disclosed herein are electrochromic devices. The electrochromic devices can comprise: an electrochromic electrode comprising an electrochromic layer and a first conducting layer; an electrolyte comprising an ion source; and a counter electrode comprising a second conducting layer; wherein the electrochromic electrode is in electrical contact with the counter electrode; and wherein the electrochromic electrode and the counter electrode are in electrochemical contact with the electrolyte. In some examples, the electrochromic devices can have s charge capacity of 10 mC/cmor more after being photocharged for 20 minutes or less at an applied electrical bias of 2 V or less.