Yong S Chang

US Patent:

20220231214, Jul 21, 2022

Filed:

Nov 1, 2021

Appl. No.:

17/516228

Inventors:

- Bolingbrook IL, US
Yong Chang - Naperville IL, US
Silviu Velicu - Willowbrook IL, US
Srinivasan Krishnamurthy - Cupertino CA, US

Assignee:

Epir, Inc. - Bolingbrook IL

International Classification:

H01L 37/02

Abstract:

A Terahertz Source and Detector device is provided that includes a nanostructured metasurface configured to transmit fully into a layer of absorbing material below the metasurface to achieve transparent conductivity in the visible spectrum region, wherein the metasurface is composed of crystalline material with very high mobility. The crystalline material can be composed of HgCdTe. The HgCdTe material can have a bandgap of about 700 meV. The intrinsic carrier concentration can be 10cmat 300K.

US Patent:

20230008594, Jan 12, 2023

Filed:

Jun 24, 2022

Appl. No.:

17/848911

Inventors:

Yong Chang - Naperville IL, US
Silviu Velicu - Willowbrook IL, US
Sushant Sonde - Westmont IL, US

International Classification:

H01L 31/0352
H01L 23/00
H01L 31/02
H01L 31/0224
H01L 31/0216

Abstract:

An FPA includes a substrate; a plurality of spaced-apart implant regions deposited in the substrate; a plurality of supplemental metal contacts, one supplemental metal contact of the plurality of supplemental metal contacts electrically connected to one implant region of the plurality of implant regions; a plurality of metal conductors electrically connecting the plurality of supplemental metal contacts; and a primary metal contact, electrically connected to the plurality of supplemental metal contacts by at least one of the metal conductors of the plurality of metal conductors. The pixel can include an Indium bump electrically connected to the primary metal contact.

US Patent:

20230002928, Jan 5, 2023

Filed:

Jun 13, 2022

Appl. No.:

17/838956

Inventors:

Sushant Sonde - Westmont IL, US
Yong Chang - Naperville IL, US
Silviu Velicu - Naperville IL, US

International Classification:

C30B 19/10
C30B 29/46

Abstract:

In a crystal growth furnace having an array of vertically arranged heaters to provide controlled heating zones within a chamber, and a crucible for holding crystal material, wherein the crystal is grown vertically through the heating zones, the improvement includes a laser mounted outside the chamber which radiates a beam of energy to locally melt precipitates and inclusions. The furnace includes a mechanism to position the laser vertically to, at or near the interface between the formed crystal and crystal melt material above the formed crystal. The crystal material can be CdZnTe.