Fred L Maddocks

US Patent:

40455947, Aug 30, 1977

Filed:

Dec 31, 1975

Appl. No.:

5/645772

Inventors:

Fred Sterns Maddocks - Poughkeepsie NY

Assignee:

IBM Corporation - Armonk NY

International Classification:

B05D 512

US Classification:

427 89

Abstract:

A method using a chemically vapor deposited (CVD) insulator to form a substantially planar layer of insulative material atop a conductive pattern on the surface of a substrate. The invention also features the use of a photoresist both as a mask for forming apertures in an underlying insulating layer as well as a lift-off material for a subsequently deposited conductive layer. In the method, a first insulating layer is deposited atop the substrate. Photoresist is then deposited; the resist pattern is exposed and developed; and the insulator is etched to expose selected areas of the substrate. A conductive film, preferably metal, is then deposited in blanket fashion in such quantity as to achieve the same height as the first insulator within the exposed apertures. The resist is lifted off, thereby leaving metal in the exposed apertures only. The pattern at this point consists of a single level of a conductive pattern and the insulator pattern with gaps between the conductors and the insulator.