Lloyd Wallace

US Patent:

43297021, May 11, 1982

Filed:

Apr 23, 1980

Appl. No.:

6/143026

Inventors:

Lloyd F. Wallace - Coatesville PA

Assignee:

RCA Corporation - New York NY

International Classification:

H01L 2714

US Classification:

357 31

Abstract:

An image sensing device includes a wafer having a first input sensing surface region and a second charge storage surface region. A recombination layer extends along the first surface and is spaced therefrom. The method for forming the recombination layer is also disclosed.

US Patent:

43583237, Nov 9, 1982

Filed:

Jan 19, 1982

Appl. No.:

6/340775

Inventors:

Lloyd F. Wallace - Coatesville PA

Assignee:

RCA Corporation - New York NY

International Classification:

H01L 2714
H01L 21263

US Classification:

148 15

Abstract:

An image sensing device includes a wafer having a first input sensing surface region and a second charge storage surface region. A recombination layer extends along the first surface and is spaced therefrom. The method for forming the recombination layer is also disclosed.

US Patent:

43625754, Dec 7, 1982

Filed:

Aug 27, 1981

Appl. No.:

6/297055

Inventors:

Lloyd F. Wallace - Coatesville PA

Assignee:

RCA Corporation - New York NY

International Classification:

H01L 2710
H01L 21263

US Classification:

148 15

Abstract:

The preferred embodiment of a method of making a buried channel CCD starts with a body of P type semiconductor material over which an oxide layer and a photoresist are deposited. Openings are formed to expose regions of the body surface where drains are to be formed and N type impurity atoms are implanted through the openings. The openings are then enlarged to expose an additional area of the surface surrounding the drains and P type atoms are implanted through the enlarged openings to form channel stops. Afterward, the surface of the body is exposed and N type atoms are implanted to form buried channel regions on each side of the channel stops and to convert a thin layer of the channel stops to lightly doped compensation regions extending between the drains and the buried channel regions.