Sung M Kang

US Patent:

6841002, Jan 11, 2005

Filed:

Nov 22, 2002

Appl. No.:

10/302126

Inventors:

Sung Gu Kang - San Jose CA, US
Craig Bae - San Jose CA, US

Assignee:

cDream Display Corporation - San Jose CA

International Classification:

C03B 1524

US Classification:

117 92, 117 93, 117102, 117103, 117108, 117921, 117929

Abstract:

Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a post-treatment step is performed on the newly formed nanotube structures. The post-treatment removes graphite and other carbon particles from the walls of the grown nanotubes and controls the thickness of the nanotube layer. The post-treatment is performed with the plasma at the same substrate temperature. For the post-treatment, the hydrogen containing gas is used as a plasma source gas. During the transition from the nanotube growth step to the post-treatment step, the pressure in the plasma process chamber is stabilized with the aforementioned purifying gas without shutting off the plasma in the chamber. This eliminates the need to purge and evacuate the plasma process chamber.

US Patent:

6841003, Jan 11, 2005

Filed:

Nov 22, 2002

Appl. No.:

10/302206

Inventors:

Sung Gu Kang - San Jose CA, US
Craig Bae - San Jose CA, US

Assignee:

cDream Display Corporation - San Jose CA

International Classification:

C30B 2514

US Classification:

117 92, 117 93, 117102, 117103, 117108, 117921, 117929

Abstract:

Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a purification step is performed on the newly formed nanotube structures. The purification removes graphite and other carbon particles from the walls of the grown nanotubes and controls the thickness of the nanotube layer. The purification is performed with the plasma at the same substrate temperature. For the purification, the hydrogen containing gas added as an additive to the source gas for the plasma chemical deposition is used as the plasma source gas. Because the source gas for the purification plasma is added as an additive to the source gas for the chemical plasma deposition, the grown carbon nanotubes are purified by reacting with the continuous plasma which is sustained in the plasma process chamber. This eliminates the need to purge and evacuate the plasma process chamber as well as to stabilize the pressure with the purification plasma source gas. Accordingly, the growth and the purification may be performed without shutting off the plasma in the plasma process chamber.

US Patent:

7175494, Feb 13, 2007

Filed:

Jun 19, 2003

Appl. No.:

10/600226

Inventors:

Sung Gu Kang - San Jose CA, US
Woo Kyung Bae - San Jose CA, US
Jung Jae Kim - San Jose CA, US

Assignee:

cDream Corporation - San Jose CA

International Classification:

H01J 9/04

US Classification:

445 50, 445 51, 4234471, 4234473, 4234474

Abstract:

An electron-emitting device contains a vertical emitter electrode patterned into multiple laterally separated sections situated between the electron-emissive elements, on one hand, and a substrate, on the other hand. The electron-emissive elements comprising carbon nanotubes are grown at a temperature range of 300 C. to 500 C. compatible with the thermal stress of the underlying substrate. The electron-emissive elements are grown on a granulized catalyst layer that provides a large surface area for growing the electron-emissive elements at such low temperature ranges. To ensure growth uniformity of the carbon nanotubes, the granularized substrate is soaked in a pre-growth plasma gas to enhance the surface diffusion properties of the granularized substrate for carbon diffusion.

US Patent:

20050132949, Jun 23, 2005

Filed:

Jan 10, 2005

Appl. No.:

11/034442

Inventors:

Sung Kang - San Jose CA, US
Craig Bae - Campbell CA, US

International Classification:

C30B007/00
C30B021/02
C30B028/06

US Classification:

117068000

Abstract:

Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. The nanotubes are grown by plasma enhanced chemical vapor deposition using a source gas and a plasma and are then purified by plasma etching using a purification gas. These growth and purification steps are repeated without evacuating the chamber and without turning off the plasma. After the nanotubes are grown, a post-treatment step is performed on the nanotubes by etching using the plasma. During the transition from the nanotube growth step to the post treatment step, the pressure in the plasma process chamber is stabilized without turning off the plasma. The entire process or a portion thereof may be iterated to achieve a carbon nanotube layer having highly uniform physical characteristics. Additionally, the etching in the post-treatment step may be reduced each iteration.

US Patent:

20050236963, Oct 27, 2005

Filed:

Apr 14, 2005

Appl. No.:

11/107407

Inventors:

Sung Kang - San Jose CA, US
Woo Bae - Campbell CA, US
Jong Son - San Jose CA, US
Chul Chang - San Jose CA, US
Jung Kim - San Jose CA, US

International Classification:

H01J001/62
H01J001/02
H01J063/04

US Classification:

313495000, 313496000, 313311000, 313309000

Abstract:

A cathode structure of a field emission device includes a gate electrode that is protected by a passivation layer. In one method for manufacturing such a field emission device, an emitter hole is formed through an insulating layer such that the passivation layer overhangs the gate layer, which overhangs an insulating layer. When used in a display system, the gate layer is exposed to an emitter electrode but shielded from an anode.

US Patent:

20060008594, Jan 12, 2006

Filed:

Jul 12, 2004

Appl. No.:

10/889807

Inventors:

Sung Kang - San Jose CA, US
Woo Bae - Campbell CA, US

International Classification:

C23C 16/00

US Classification:

427569000, 11872300E, 427585000

Abstract:

An embodiment of a system for forming carbon nanotubes (CNTs) using plasma enhanced chemical vapor deposition (PECVD) uses one or more of RF and DC power supplies coupled to electrodes in various configurations within a process chamber of the system. By application of a sufficient DC voltage to one or more electrodes, the system allows for growing CNTs that can be straighter and have improved electrical performance characteristics.

US Patent:

20080266214, Oct 30, 2008

Filed:

Jan 23, 2008

Appl. No.:

12/018455

Inventors:

Walter Edward Naugler - Katy TX, US
Sung Gu Kang - San Jose CA, US
Cheon Hong Kim - Sunnyvale CA, US

Assignee:

LEADIS TECHNOLOGY, INC. - Sunnyvale CA

International Classification:

G09G 3/30

US Classification:

345 76

Abstract:

An active matrix drive system drives an emissive display device such as an organic light-emitting diode display and is configured to measure sub-pixel current in the emissive display device. One or more power column power lines of the emissive display device are turned off while sub-pixel current is measured. As a result, the sub-pixel current is relative large compared to the background current of the emissive display device, which facilitates accurate measurement of the sub-pixel current.

US Patent:

20150212120, Jul 30, 2015

Filed:

Jan 30, 2014

Appl. No.:

14/168177

Inventors:

- Cupertino CA, US
Sung Wook Kang - Santa Clara CA, US

International Classification:

G01R 19/00
G01R 31/02

Abstract:

A device includes an integrated circuit programmed with an operating surface equation. The operating surface equation may define an operating point as a function of operating voltage, operating frequency, and leakage current. The operating surface equation may be generated by fitting a surface equation to data for operating voltage and operating frequency versus leakage current for a plurality of test integrated circuits. An operating voltage of the integrated circuit at a given operating frequency may be determined by the operating surface equation and a leakage current value fused into the device.