Tzu Ying Wang

US Patent:

8558188, Oct 15, 2013

Filed:

Apr 25, 2012

Appl. No.:

13/456182

Inventors:

Rebecca J. Nikolic - Oakland CA, US
Adam M. Conway - Livermore CA, US
Daniel Heineck - La Jolla CA, US
Lars F. Voss - Livermore CA, US
Tzu Fang Wang - Danville CA, US
Qinghui Shao - Fremont CA, US

Assignee:

Lawrence Livermore National Security, LLC - Livermore CA

International Classification:

G01T 3/00

US Classification:

25039001

Abstract:

Methods for manufacturing solid-state thermal neutron detectors with simultaneous high thermal neutron detection efficiency (>50%) and neutron to gamma discrimination (>10) are provided. A structure is provided that includes a p+ region on a first side of an intrinsic region and an n+ region on a second side of the intrinsic region. The thickness of the intrinsic region is minimized to achieve a desired gamma discrimination factor of at least 1. 0E+04. Material is removed from one of the p+ region or the n+ region and into the intrinsic layer to produce pillars with open space between each pillar. The open space is filed with a neutron sensitive material. An electrode is placed in contact with the pillars and another electrode is placed in contact with the side that is opposite of the intrinsic layer with respect to the first electrode.

US Patent:

20060255282, Nov 16, 2006

Filed:

Apr 27, 2006

Appl. No.:

11/414288

Inventors:

Rebecca Nikolic - Oakland CA, US
Chin Cheung - Lincoln NE, US
Tzu Wang - Danville CA, US
Catherine Reinhardt - Livermore CA, US

International Classification:

G01T 3/00

US Classification:

250390010

Abstract:

Semiconductor-based elements as an electrical signal generation media are utilized for the detection of neutrons. Such elements can be synthesized and used in the form of, for example, semiconductor dots, wires or pillars in the form of semiconductor substrates embedded in matrixes of high cross-section neutron converter materials that can emit charged particles upon interaction with neutrons. These charged particles in turn can generate electron-hole pairs and thus detectable electrical current and voltage in the semiconductor elements. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or the meaning of the claims.