Alan Q Martinez

US Patent:

20160294151, Oct 6, 2016

Filed:

Jun 14, 2016

Appl. No.:

15/182384

Inventors:

- Birmingham AL, US
Andrew Gallian - McLean VA, US
Alan Martinez - Portland TX, US
Vladimir V. Fedorov - Birmingham AL, US

Assignee:

The UAB Research Foundation - Birmingham AL

International Classification:

H01S 3/11
H01S 3/092
H01S 3/16

Abstract:

A Q-switched laser includes a laser cavity including a cavity mirror and an output coupler mirror. The Q-switched laser also includes a doped laser gain material disposed in the laser cavity and a Q-switch including a saturable absorber comprising Fe:ZnSe or Fe:ZnS.

US Patent:

20140362879, Dec 11, 2014

Filed:

Aug 26, 2014

Appl. No.:

14/469547

Inventors:

- Birmingham AL, US
Andrew Gallian - McLean VA, US
Alan Martinez - Portland TX, US
Vladimir V. Fedorov - Birmingham AL, US

Assignee:

The UAB Research Foundation - Birmingham AL

International Classification:

H01S 3/113
C23C 14/18
B05D 3/00
H01S 3/16
B05D 1/00

US Classification:

372 11, 427532, 427209, 20419225

Abstract:

This disclosure demonstrates successfully using single, polycrystalline, hot pressed ceramic, and thin film Fe doped binary chalcogenides (such as ZnSe and ZnS) as saturable absorbing passive Q-switches. The method of producing polycrystalline ZnSe(S) yields fairly uniform distribution of dopant, large coefficients of absorption (5-50 cm) and low passive losses while being highly cost effective and easy to reproduce. Using these Fe:ZnSe crystals, stable Q-switched output was achieved with a low threshold and the best cavity configuration yielded 13 mJ/pulse single mode Q-switched output and 85 mJ in a multipulse regime.