Alan E Walter

US Patent:

6348101, Feb 19, 2002

Filed:

Sep 26, 2000

Appl. No.:

09/669789

Inventors:

Alan E. Walter - Exton PA

Assignee:

CFMT, Inc. - Wilmington DE

International Classification:

B08B 312

US Classification:

134 1, 134 10, 134 11, 134 30, 134 31

Abstract:

An object is treated by contacting it with an organic solvent and then removing the organic solvent by directly displacing it with a fluid comprising a drying vapor (e. g. , isopropyl alcohol or IPA vapor) such that substantially no liquid droplets of organic solvent are left on the surfaces of the object to evaporate after the direct displacement of the organic solvent with the fluid.

US Patent:

6491763, Dec 10, 2002

Filed:

Mar 13, 2001

Appl. No.:

09/805348

Inventors:

Steven Verhaverbeke - San Francisco CA
Lewis Liu - Paoli PA
Alan Walter - Chester Springs PA
C. Wade Sheen - Chester Springs PA
Christopher McConnell - Berwyn PA

Assignee:

Mattson Technology IP - Wilmington DE

International Classification:

B08B 300

US Classification:

134 26, 134 30, 134 31, 134 2, 134 3

Abstract:

A process for treating an electronic component wherein the electronic component is exposed to a heated solvent and subsequently exposed to an ozonated process fluid. The electronic component is optionally exposed to the heated solvent by exposing the electronic component to a passing layer of heated solvent. An apparatus for treating electronic components with a heated solvent and an ozonated process fluid is also provided.

US Patent:

20060011214, Jan 19, 2006

Filed:

Jul 7, 2005

Appl. No.:

11/176406

Inventors:

Zhi Liu - Paoli PA, US
Ismail Kashkoush - Orefield PA, US
Alan Walter - Chester Springs PA, US
Richard Novak - Plymouth MN, US

International Classification:

C03C 23/00
B08B 3/00

US Classification:

134002000, 134026000, 134094100

Abstract:

A system and method for cleaning semiconductor wafers wherein the use of SCI and SC2 is eliminated and replaced by the use DIOand dilute chemistries. In one aspect, the invention is a method comprising: (a) supporting in a process chamber at least one semiconductor wafer having a silicon foundation with a silicon-dioxide layer in at least one pre-gate structure; (b) applying an aqueous solution of hydrofluoric acid in deionized (DI) water to the semiconductor wafer to remove the silicon dioxide layer and form a gate; (c) applying ozonated deionized water (DIO) to the semiconductor wafer to remove particles from the gate and passivate the silicon foundation; (d) applying a dilute solution of hydrofluoric acid and hydrochloric acid in DI water to the semiconductor wafer to remove any silicon dioxide layer that may have formed in the gate from the application of the DIOand to remove any metal contaminants; and (e) applying DIOto the semiconductor wafer to grow a new layer of silicon dioxide on the silicon foundation in the gate.

US Patent:

20060021634, Feb 2, 2006

Filed:

Jul 8, 2005

Appl. No.:

11/177147

Inventors:

Zhi (Lewis) Liu - Paoli PA, US
Richard Novak - Plymouth MN, US
Alan Walter - Chester Springs PA, US
Nick Yialamas - Allentown PA, US

International Classification:

B08B 6/00

US Classification:

134001300

Abstract:

A method and system for creating an ozonated process solution, such as ozonated deionized water, having high ozone concentration. The system comprises, a static mixer coupled to a recirculation loop of an auxiliary tank. The system and method are designed so that during the initial feed of process liquid and ozone gas to the system, the process liquid and ozone gas pass through the static mixer prior to ever reaching the auxiliary. The static mixer mixes the ozone gas into the process liquid to form the ozonated process solution. Thus, the auxiliary tank is initially filled with an ozonated process solution. The ozonated process solution can be recirculated from the auxiliary tank and back through the static mixer while additional ozone gas is dissolved therein. This recirculation can be performed until a desired concentration of ozone is detected in the ozonated process solution.

US Patent:

20060260638, Nov 23, 2006

Filed:

Mar 8, 2006

Appl. No.:

11/370361

Inventors:

Pejman Fani - San Diego CA, US
Ismail Kashkoush - Orefield PA, US
John Korbler - Mertztown PA, US
Vivek Vohra - Upper Macungie PA, US
Alan Walter - Chester Springs PA, US

International Classification:

B08B 3/12
B08B 7/00

US Classification:

134001000, 134033000

Abstract:

A system and method for processing and/or cleaning substrates using sonic energy that eliminates or reduces damage to the substrates. In one aspect, the invention utilizes and produces low power density sonic energy to effectively remove particles from a substrate. In another aspect, the invention utilizes and generates a clean electrical signal for driving a source of sonic energy, such as a transducer.

US Patent:

20060260639, Nov 23, 2006

Filed:

Mar 8, 2006

Appl. No.:

11/370707

Inventors:

Pejman Fani - San Diego CA, US
Ismail Kashkoush - Orefield PA, US
John Korbler - Mertztown PA, US
Vivek Vohra - Upper Macungie PA, US
Alan Walter - Chester Springs PA, US

International Classification:

B08B 3/12
B08B 7/00

US Classification:

134001000, 134033000, 134184000

Abstract:

A system and method for processing and/or cleaning substrates using sonic energy that eliminates or reduces damage to the substrates. In one aspect, the invention utilizes and produces low power density sonic energy to effectively remove particles from a substrate. In another aspect, the invention utilizes and generates a clean electrical signal for driving a source of sonic energy, such as a transducer.

US Patent:

20070094885, May 3, 2007

Filed:

Nov 3, 2005

Appl. No.:

11/266402

Inventors:

Alan Walter - Chester Springs PA, US

International Classification:

F26B 25/18
F26B 11/02

US Classification:

034237000, 034109000

Abstract:

An apparatus and method for drying substrates in single-wafer processing chambers by providing capillary material at those areas where the substrate contacts a rotatable support. The capillary material will draw in, by capillary force, any liquid that is trapped between the substrate and the support at the areas of contact, thus reducing the edge exclusion area of the substrate and increasing yield. The inventive apparatus, in one aspect, comprises: a rotatable support comprising a fixture for supporting a substrate in a substantially horizontal orientation by contacting only a perimeter region of a substrate; the fixture comprising one or more contact surfaces that contact and support the perimeter region of the substrate; and wherein the one or more contact surfaces comprise a capillary material.

US Patent:

48997676, Feb 13, 1990

Filed:

Dec 12, 1988

Appl. No.:

7/283465

Inventors:

Christopher F. McConnell - Gulph Mills PA
Alan E. Walter - Exton PA

Assignee:

CFM Technologies, Inc. - Lionville PA

International Classification:

B08B 302

US Classification:

134 56R

Abstract:

A system for the fluid treatment of semiconductor wafers includes a treatment vessel having opposed first and second ports, and means for holding wafers in a flow path therebetween. A flow segment comprising in sequence, a first vent, a first valve, an inlet, a second valve and a second vent extends between the first and the second port so as to constitute, together with the vessel, a closed fluid loop. A fluid delivery system for the delivery of a sequence of high purity treatment fluids to a treatment vessel includes a measuring tank having opposed ports and configured for plug flow between the ports, and a metering pump having its inlet connected to a said port for withdrawing metered amounts of fluid from the tank. A plurality of reservoirs of treatment fluid are each connected via a respective associated valve to one of the said ports. The tank is maintained hydraulically full, so that actuating the pump to withdraw a metered volume of fluid from the tank, and opening a valve associated with a selected treatment fluid draws the metered volume of the selected treatment fluid into the tank.