An object is treated by contacting it with an organic solvent and then removing the organic solvent by directly displacing it with a fluid comprising a drying vapor (e. g. , isopropyl alcohol or IPA vapor) such that substantially no liquid droplets of organic solvent are left on the surfaces of the object to evaporate after the direct displacement of the organic solvent with the fluid.
System And Method For Pre-Gate Cleaning Of Substrates
Zhi Liu - Paoli PA, US Ismail Kashkoush - Orefield PA, US Alan Walter - Chester Springs PA, US Richard Novak - Plymouth MN, US
International Classification:
C03C 23/00 B08B 3/00
US Classification:
134002000, 134026000, 134094100
Abstract:
A system and method for cleaning semiconductor wafers wherein the use of SCI and SC2 is eliminated and replaced by the use DIOand dilute chemistries. In one aspect, the invention is a method comprising: (a) supporting in a process chamber at least one semiconductor wafer having a silicon foundation with a silicon-dioxide layer in at least one pre-gate structure; (b) applying an aqueous solution of hydrofluoric acid in deionized (DI) water to the semiconductor wafer to remove the silicon dioxide layer and form a gate; (c) applying ozonated deionized water (DIO) to the semiconductor wafer to remove particles from the gate and passivate the silicon foundation; (d) applying a dilute solution of hydrofluoric acid and hydrochloric acid in DI water to the semiconductor wafer to remove any silicon dioxide layer that may have formed in the gate from the application of the DIOand to remove any metal contaminants; and (e) applying DIOto the semiconductor wafer to grow a new layer of silicon dioxide on the silicon foundation in the gate.
Method And Apparatus For Creating Ozonated Process Solutions Having High Ozone Concentration
Zhi (Lewis) Liu - Paoli PA, US Richard Novak - Plymouth MN, US Alan Walter - Chester Springs PA, US Nick Yialamas - Allentown PA, US
International Classification:
B08B 6/00
US Classification:
134001300
Abstract:
A method and system for creating an ozonated process solution, such as ozonated deionized water, having high ozone concentration. The system comprises, a static mixer coupled to a recirculation loop of an auxiliary tank. The system and method are designed so that during the initial feed of process liquid and ozone gas to the system, the process liquid and ozone gas pass through the static mixer prior to ever reaching the auxiliary. The static mixer mixes the ozone gas into the process liquid to form the ozonated process solution. Thus, the auxiliary tank is initially filled with an ozonated process solution. The ozonated process solution can be recirculated from the auxiliary tank and back through the static mixer while additional ozone gas is dissolved therein. This recirculation can be performed until a desired concentration of ozone is detected in the ozonated process solution.
Apparatus And Method For Removing Trace Amounts Of Liquid From Substrates During Single-Substrate Processing
An apparatus and method for drying substrates in single-wafer processing chambers by providing capillary material at those areas where the substrate contacts a rotatable support. The capillary material will draw in, by capillary force, any liquid that is trapped between the substrate and the support at the areas of contact, thus reducing the edge exclusion area of the substrate and increasing yield. The inventive apparatus, in one aspect, comprises: a rotatable support comprising a fixture for supporting a substrate in a substantially horizontal orientation by contacting only a perimeter region of a substrate; the fixture comprising one or more contact surfaces that contact and support the perimeter region of the substrate; and wherein the one or more contact surfaces comprise a capillary material.
Method And System For Fluid Treatment Of Semiconductor Wafers
Christopher F. McConnell - Gulph Mills PA Alan E. Walter - Exton PA
Assignee:
CFM Technologies, Inc. - Lionville PA
International Classification:
B08B 302
US Classification:
134 56R
Abstract:
A system for the fluid treatment of semiconductor wafers includes a treatment vessel having opposed first and second ports, and means for holding wafers in a flow path therebetween. A flow segment comprising in sequence, a first vent, a first valve, an inlet, a second valve and a second vent extends between the first and the second port so as to constitute, together with the vessel, a closed fluid loop. A fluid delivery system for the delivery of a sequence of high purity treatment fluids to a treatment vessel includes a measuring tank having opposed ports and configured for plug flow between the ports, and a metering pump having its inlet connected to a said port for withdrawing metered amounts of fluid from the tank. A plurality of reservoirs of treatment fluid are each connected via a respective associated valve to one of the said ports. The tank is maintained hydraulically full, so that actuating the pump to withdraw a metered volume of fluid from the tank, and opening a valve associated with a selected treatment fluid draws the metered volume of the selected treatment fluid into the tank.
Method And System For Fluid Treatment Of Semiconductor Wafers
Christopher F. McConnell - Gulph Mills PA Alan E. Walter - Exton PA
International Classification:
B08B 504
US Classification:
134 18
Abstract:
A method for the fluid treatment of semiconductor wafers includes a treatment vessel having opposed first and second ports, and means for holding wafers in a flow path therebetween. A flow segment comprising in sequence, a first vent, a first valve, an inlet, a second valve and a second vent extends between the first and the second port so as to constitute, together with the vessel, a closed fluid loop. Preferably, the first and second ports are top and bottom ports, with a flow path extending vertically therebetween. The loop is maintained hydraulically full, whereby filling the vessel with a treatment fluid at the inlet, flushes a preceding treatment fluid from the system. A sequence of treatment fluids of differing densities may be provided at the inlet, and a vent and a valve are controlled to fill the loop from the bottom, in the event the treatment fluid is denser than the preceding fluid, or from the top, in the event the fluid is lighter than the preceding fluid. A circulation pump recirculates fluid within the loop.
Process And Apparatus For Treating Wafers With Process Fluids
Christopher F. McConnell - Gulph Mills PA Alan E. Walter - Exton PA
Assignee:
CFM Technologies Limited Partnership - Penllyn PA
International Classification:
B08B 704
US Classification:
134 10
Abstract:
Contamination of wafers is reduced by an enclosed full-flow method and apparatus for the cleaning and other wet processing of semiconductor wafers. Process fluids flow sequentially and continuously past the wafers such that the processing does not require movement or operator handling of the wafers between processing steps. The vessel containing the wafers is hydraulically full during each process step. Wafers may be cleaned using a hot corrosive fluid, such as sulfuric acid; rinsed using high purity water at high flow rates; and dried using a drying fluid such an isopropanol. In addition, chemical reagents such as dilute hydrofluoric acid or hydrogen peroxide may be precisely mixed in situ and applied to the wafer surface for a precisely controlled period, by injecting concentrated reagent into rinse water purified by multipass filtration.
An object is treated by contacting it with an organic solvent and then removing the organic solvent by directly displacing it with a fluid comprising a drying vapor (e. g. , isopropyl alcohol or IPA vapor) such that substantially no liquid droplets of organic solvent or drying vapor are left on the surfaces of the object to evaporate after the direct displacement of the organic solvent with the fluid.
iWafer since Jan 2008
General Business Manager
Independent Contractor since 2006
IP Consulant
Akrion - Allentown, Pennsylvania Area 2004 - 2007
Vice President Marketing and IP
SCP Global Technologies - Boise, ID 2003 - 2004
Director IP
Mattson Technology - Fremont, CA 2001 - 2003
Site General Manager
Education:
University of Delaware 1971 - 1975
BSCHE 1975, Chemical Engineering
John Dickinson High School
Skills:
Semiconductors Cross Functional Team Leadership Product Development R&D Start Ups Process Engineering Semiconductor Industry Engineering Management Strategy Manufacturing Strategic Partnerships Business Development Competitive Analysis Program Management Integration Automation Mergers and Acquisitions Spc Six Sigma Product Management Thin Films Management Research and Development Medical Devices
Alan Walter (1976-1980), Marsha McIntire (1975-1979), Paul Clough (1976-1977), Butch Bates (1975-1979), Robert Shetterly (1967-1971), Dustin Mowery (1995-1999)
After being snatched from her mother's car, Measles was taken to River Road in New Milford, Connecticut where her known attackers - Keith Foster, Dorothy Hallas, Maggie Mae Bennett, Alan Walter, Jeffrey Boyette, Ronald Rajcok, Deaneric Dupas, and June Segar - began beating her.
Minots in for a rough spell, all right. The Souris River is expected to crest something like 7 feet above its previous all-time recorded high. As Minots public works director Alan Walter put it, Were moving an ocean through this city, and its going to be here for awhile.
Date: Jun 22, 2011
Category: U.S.
Source: Google
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Memorial to Alan Walter: Always a Fighter : L...
Alan Walter memorial meeting He was a fighter, a friend and a father. ...
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He was a fighter, a friend and a father. He hated injustice and he lov...
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Memorial to Alan Walter: Austin Mitchell MP
He was a fighter, a friend and a father. He hated injustice and he lov...