Ronald G. Filippi - Wappingers Falls NY James J. Poulin - Poughquag NY Robert D. Raviart - Poughkeepsie NY Kenneth P. Rodbell - Poughquag NY Richard G. Smith - Poughkeepsie NY Timothy D. Sullivan - Underhill VT Alexander J. Swinton - Hopewell Junction NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G01R 3128
US Classification:
324763
Abstract:
A test layout increases the sample size of electromigration experiments. Through pad sharing, the number of structures tested can be increased, allowing hundreds of identical structures to be tested in a single high temperature oven door.
Sub-Quarter-Micron Copper Interconnections With Improved Electromigration Resistance And Reduced Defect Sensitivity
Hazara S. Rathore - Stormville NY Hormazdyar M. Dalal - Milton NY Paul S. McLaughlin - Poughkeepsie NY Du B. Nguyen - Danbury CT Richard G. Smith - Poughkeepsie NY Alexander J. Swinton - Hopewell Junction NY Richard A. Wachnik - Brewster NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
B05D 506
US Classification:
438628
Abstract:
A method of providing sub-half-micron copper interconnections with improved electromigration and corrosion resistance. The method includes double damascene using electroplated copper, where the seed layer is deposited by chemical vapor deposition, or by physical vapor deposition in a layer less than about 800 angstroms.
Sub-Quarter-Micron Copper Interconnections With Improved Electromigration Resistance And Reduced Defect Sensitivity
Hazara S. Rathore - Stormville NY Hormazdyar M. Dalal - Milton NY Paul S. McLaughlin - Poughkeepsie NY Du B. Nguyen - Danbury CT Richard G. Smith - Poughkeepsie NY Alexander J. Swinton - Hopewell Junction NY Richard A. Wachnik - Brewster NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 214763
US Classification:
438628
Abstract:
A method of providing sub-half-micron copper interconnections with improved electromigration and corrosion resistance. The method includes double damascene using electroplated copper, where the seed layer is deposited by chemical vapor deposition, or by physical vapor deposition in a layer less than about 800 angstroms.