Alice Salzano White

Address:

3597 Froude St, North Port, FL 34286

Phone:

(941)4269752

VIN:

1D8GT58K77W607952

Make:

DODGE

Model:

NITRO

Year:

2007

US Patent:

7437075, Oct 14, 2008

Filed:

Aug 27, 2002

Appl. No.:

10/228800

Inventors:

Christopher Richard Doerr - Middletown NJ, US
David S Levy - Freehold NJ, US
Timothy O. Murphy - Fairport NJ, US
Alice Elizabeth White - Summit NJ, US

Assignee:

Lucent Technologies Inc. - Murray Hill NJ

International Classification:

H04J 14/02

US Classification:

398 83, 398 45, 398 82

Abstract:

An integrated reconfigurable planar lightwave add-drop (RPLAD) multiplexer for use in a WDM optical communication system is arranged such that each drop port can receive any wavelength channel and each add port can transmit on any wavelength channel. Drop port reconfigurability is achieved by integrating a cross-connect functionality into the RPLAD, illustratively using optical 1×2 switches to perform “space” switching. The switches are controlled from a remotely located node controller. Add port reconfigurability is achieved by having tunable lasers and a wavelength independent optical power combiner, which may be a star coupler that is integrated with the other above-mentioned elements. The RPLAD has a modular architecture, so that when RPLAD's are connected by dual unidirectional transmission rings for the purpose of redundancy and failure protection, an RPLAD that fails can be removed and the remaining module can be reconfigured so as to re-route incoming traffic backwards around the still operating optical communication ring.

US Patent:

43685463, Jan 18, 1983

Filed:

Aug 6, 1980

Appl. No.:

6/175729

Inventors:

Alice C. White - Franklin Lakes NJ

International Classification:

A41B 1100

US Classification:

2239

Abstract:

The present invention comprises an athletic undergarment having trunk and leg portions woven from a sheer, resiliently elastic material and foot portions knit from heavy compressible yarn. The leg portions are permanently secured to the interior of the foot portions in a manner which both maximizes the area of contact between the yarn and the wearer's feet and reduces the tendency of the foot portions to unravel following periods of prolonged usage. The resilient elasticity of the sheer trunk and leg portions furnish muscle support and circulatory stimulation for the wearer's legs, while the knit foot portions prevent relative slippage and excessive perspiration build-up between the foot portions, leg portions and the wearer's shoes.

US Patent:

50533835, Oct 1, 1991

Filed:

Mar 29, 1988

Appl. No.:

7/174577

Inventors:

Kenneth T. Short - New Providence NJ
Alice E. White - New Providence NJ

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

B05D 512
B05D 306

US Classification:

505 1

Abstract:

The critical current density J. sub. c of a superconductive oxide film can be tailored, without substantial change in the critical temperature T. sub. c (R. dbd. 0), by introduction of radiation damage into the superconductor. Exemplarily, this is done by exposure to energetic (e. g. , 1 MeV) ions. The ability to tailor J. sub. c permits optimization of SQUIDS and other thin film devices, and makes it possible to produce superconductive interconnects that comprise "fuses" or current limiters.

US Patent:

47496606, Jun 7, 1988

Filed:

Nov 26, 1986

Appl. No.:

6/935273

Inventors:

Kenneth T. Short - New Providence NJ
Alice E. White - New Providence NJ

Assignee:

American Telephone and Telegraph Company, AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01L 21265
H01L 2120

US Classification:

437 24

Abstract:

We have discovered that high quality subcritical SIMOX silicon-on-insulator wafers can be produced by a method that comprises a randomizing implant followed by an appropriate heat treatment. In a preferred embodiment, the inventive method comprises, in succession, a subcritical oxygen implant (nominal wafer temperature 1200. degree. C. ) anneal, a randomizing implant (. about. 5. times. 10. sup. 14 Si/cm. sup. 2, nominal wafer temperature

US Patent:

51224798, Jun 16, 1992

Filed:

Apr 11, 1991

Appl. No.:

7/683891

Inventors:

Sarah A. Audet - Bridgewater NJ
Conor S. Rafferty - Basking Ridge NJ
Kenneth T. Short - New Providence NJ
Alice E. White - New Providence NJ

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01L 2144

US Classification:

437200

Abstract:

Disclosed is a method of making a Si-based semiconductor device comprising a contact region that comprises a thin (exemplarily less than 50 nm), substantially uniform silicide layer. The silicide preferably is CoSi. sub. 2 or TiSi. sub. 2. The method comprises implantation of the appropriate metal ions into a Si body, the dose and the body temperature selected such that substantially complete amorphization of the implant volume results. Subsequently, the Si body is subjected to an annealing treatment that results in recrystallization of the implant volume and formation of the silicide layer. The layer extends to the surface of the body and contains essentially all of the implanted metal ions. The invention can advantageously be used in conjunction with extremely shallow junctions, such as will be of interest in short (e. g. ,

US Patent:

48164216, Mar 28, 1989

Filed:

Nov 24, 1986

Appl. No.:

6/934160

Inventors:

Robert C. Dynes - Summit NJ
Kenneth T. Short - New Providence NJ
Alice E. White - New Providence NJ

Assignee:

American Telephone and Telegraph Company, AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01L 21265
H01L 2128

US Classification:

437 26

Abstract:

Disclosed is a technique, termed "mesotaxy", for producing a heteroepitaxial structure comprising a layer of single crystal second material embedded in, and epitaxial with, a single crystal first material matrix. Mesotaxy comprises implantation of at least one chemical species (e. g. , Co, Ni, Cr, Y or Mg) into a single crystal body (typically a semiconductor, e. g. , Si or Ge) such that a buried layer rich in the implanted species is formed, and heat treating the implanted body such that a buried stoichiometric compound layer (e. g. , CoSi. sub. 2) is formed. Exemplarily, 3. multidot. 10. sup. 17 /cm. sup. 2 200 keV Co ions are implanted into (100) Si nominally at 350. degree. C. , followed by a heat treatment that consists of 1 hour at 600. degree. C. and 30 minutes at 1000. degree. C. The resulting buried CoSi. sub.

US Patent:

45063923, Mar 26, 1985

Filed:

Dec 23, 1982

Appl. No.:

6/452762

Inventors:

Alice C. White - Franklin Lakes NJ

International Classification:

A41B 1100

US Classification:

2239

Abstract:

The present invention comprises an athletic undergarment having trunk and leg portions woven from a sheer, resiliently elastic material and foot portions knit from heavy compressible yarn. The leg portions are permanently secured to the interior of the foot portions by stitching in a manner which maximizes the area of contact between the yarn and the wearer's feet. The resilient elasticity of the sheer trunk and leg portions furnish muscle support and circulatory stimulation for the wearer's legs, while the knit foot portions prevent relative slippage and excessive perspiration build-up between the foot portions and the wearer's shoes.