Allen E Gray

US Patent:

8563844, Oct 22, 2013

Filed:

Mar 9, 2012

Appl. No.:

13/416246

Inventors:

Allen L. Gray - Holly Springs NC, US
Robert Joseph Therrien - Cary NC, US
Patrick John McCann - Norman OK, US

Assignee:

Phononic Devices, Inc. - Durham NC
Board of Regents of the University of Oklahoma - Norman OK

International Classification:

H01L 35/26
H01L 35/22

US Classification:

136238, 136200, 136201, 1362361, 136237, 136239, 136240, 257 22, 257 42, 257108, 257442, 257467, 257468, 257469, 257470, 257614, 257930

Abstract:

Embodiments of a thin-film heterostructure thermoelectric material and methods of fabrication thereof are disclosed. In general, the thermoelectric material is formed in a Group IIa and IV-VI materials system. The thermoelectric material includes an epitaxial heterostructure and exhibits high heat pumping and figure-of-merit performance in terms of Seebeck coefficient, electrical conductivity, and thermal conductivity over broad temperature ranges through appropriate engineering and judicious optimization of the epitaxial heterostructure.

US Patent:

8564129, Oct 22, 2013

Filed:

Aug 3, 2012

Appl. No.:

13/565960

Inventors:

Robert Joseph Therrien - Cary NC, US
Jason D. Reed - Chapel Hill NC, US
Jaime A. Rumsey - Holly Springs NC, US
Allen L. Gray - Holly Springs NC, US

Assignee:

Phononic Devices, Inc. - Durham NC

International Classification:

H01L 23/48
H01L 29/43

US Classification:

257741, 257743, 257744, 257748, 257467, 257E23163, 438 54, 438602, 438603

Abstract:

Embodiments of a low resistivity contact to a semiconductor structure are disclosed. In one embodiment, a semiconductor structure includes a semiconductor layer, a semiconductor contact layer having a low bandgap on a surface of the semiconductor layer, and an electrode on a surface of the semiconductor contact layer opposite the semiconductor layer. The bandgap of the semiconductor contact layer is in a range of and including 0 to 0. 2 electron-volts (eV), more preferably in a range of and including 0 to 0. 1 eV, even more preferably in a range of and including 0 to 0. 05 eV. Preferably, the semiconductor layer is p-type. In one particular embodiment, the semiconductor contact layer and the electrode form an ohmic contact to the p-type semiconductor layer and, as a result of the low bandgap of the semiconductor contact layer, the ohmic contact has a resistivity that is less than 1×10ohmscm.

US Patent:

20120217548, Aug 30, 2012

Filed:

Feb 24, 2012

Appl. No.:

13/404548

Inventors:

Allen L. Gray - Holly Springs NC, US
Robert Joseph Therrien - Cary NC, US
Patrick John McCann - Norman OK, US

Assignee:

BOARD OF REGENTS OF THE UNIVERSITY OF OKLAHOMA - Norman OK
PHONONIC DEVICES, INC. - Raleigh NC

International Classification:

H01L 29/267
H01L 21/20

US Classification:

257200, 438478, 257E29081, 257E2109

Abstract:

Embodiments of a thin-film heterostructure thermoelectric material and methods of fabrication thereof are disclosed. In general, the thermoelectric material is formed in a Group IIa and IV-VI materials system. The thermoelectric material includes an epitaxial heterostructure and exhibits high heat pumping and figure-of-merit performance in terms of Seebeck coefficient, electrical conductivity, and thermal conductivity over broad temperature ranges through appropriate engineering and judicious optimization of the epitaxial heterostructure.

US Patent:

20130196474, Aug 1, 2013

Filed:

Aug 4, 2011

Appl. No.:

13/814343

Inventors:

Matthew Meitl - Durham NC, US
Christopher Bower - Raleigh NC, US
Etienne Menard - Voglans, FR
James Carter - Chapel Hill NC, US
Allen Gray - Holly Springs NC, US
Salvatore Bonafede - Chapel Hill NC, US

International Classification:

H01L 21/306

US Classification:

438127

Abstract:

A method of fabricating transferable semiconductor devices includes providing a release layer including indium aluminum phosphide on a substrate, and providing a support layer on the release layer. The support layer and the substrate include respective materials, such as arsenide-based materials, such that the release layer has an etching selectivity relative to the support layer and the substrate. At least one device layer is provided on the support layer. The release layer is selectively etched without substantially etching the support layer and the substrate. Related structures and methods are also discussed.

US Patent:

20160161155, Jun 9, 2016

Filed:

Dec 4, 2015

Appl. No.:

14/959408

Inventors:

- Durham NC, US
Abhishek Yadav - Cary NC, US
Jesse W. Edwards - Wake Forest NC, US
James Christopher Caylor - Chapel Hill NC, US
Ted Donnelly - Raleigh NC, US
Michael J. Bruno - Holly Springs NC, US
Allen L. Gray - Holly Springs NC, US
Devon Newman - Morrisville NC, US

International Classification:

F25B 13/00
F25B 41/04

Abstract:

According to one aspect, a hybrid heat transfer system includes a first thermally conductive path configured to passively transfer heat between a load having a load temperature (T) and an ambient environment having an ambient temperature (T), and a second thermally conductive path configured to actively transfer heat between the load and the ambient environment, the second path comprising a heat pump.

US Patent:

20150200098, Jul 16, 2015

Filed:

Jan 16, 2015

Appl. No.:

14/599123

Inventors:

- Durham NC, US
Jaime A. Rumsey - Holly Springs NC, US
Ronald R. Hess - Oak Ridge NC, US
Arthur Prejs - Cary NC, US
Ian Patrick Wellenius - Raleigh NC, US
Allen L. Gray - Holly Springs NC, US

International Classification:

H01L 21/283
H01L 35/34
H01L 35/02

Abstract:

Embodiments of a low resistivity ohmic contact are disclosed. In some embodiments, a method of fabricating a low resistivity ohmic contact includes providing a semiconductor material layer and intentionally roughening the semiconductor material layer to create a characteristic surface roughness. The method also includes providing an ohmic contact metal layer on a surface of the semiconductor material layer and providing a diffusion barrier metal layer on a surface of the ohmic contact metal layer opposite the semiconductor material layer. In this way, the adhesive force between the semiconductor material layer and the ohmic contact metal layer may be increased.

US Patent:

20150107640, Apr 23, 2015

Filed:

Oct 17, 2014

Appl. No.:

14/517345

Inventors:

- Durham NC, US
Ian Patrick Wellenius - Raleigh NC, US
William O. Charles - Morrisville NC, US
Pablo Cantu - Raleigh NC, US
Allen L. Gray - Holly Springs NC, US

International Classification:

H01L 35/16
H01L 35/34
H01L 35/18

US Classification:

136238, 438 54

Abstract:

A thermoelectric material and methods of manufacturing thereof are disclosed. In general, the thermoelectric material comprises a Group V-VI host, or matrix, material and Group III-V or Group IV-VI nanoinclusions within the Group V-VI host material. By incorporating the Group III-V or Group IV-VI nanoinclusions into the Group V-VI host material, the performance of the thermoelectric material can be improved.

US Patent:

20150110156, Apr 23, 2015

Filed:

Oct 17, 2014

Appl. No.:

14/517416

Inventors:

- Durham NC, US
Pablo Cantu - Raleigh NC, US
Allen L. Gray - Holly Springs NC, US

International Classification:

G01K 11/12
G01K 7/08
G01N 21/17

US Classification:

374161

Abstract:

Systems and methods for characterizing one or more properties of a material are disclosed. In some embodiments, the one or more properties include one or more thermal properties of the material, one or more thermoelectric properties of the material, and/or one or more thermomagnetic properties of the material. In some embodiments, a method of characterizing one or more properties of a sample material comprises heating the sample material and, while heating the sample material, obtaining one or more temperature measurements for at least one surface of the sample material via one or more thermoreflectance probes and obtaining one or more electric measurements for the sample material that correspond in time to the one or more temperature measurements. The method further comprises computing one or more parameters that characterize one or more properties of the sample material based on the measurements.