Andrew M Bailey

US Patent:

20040011467, Jan 22, 2004

Filed:

Jul 11, 2003

Appl. No.:

10/618289

Inventors:

David Hemker - San Jose CA, US
Mark Wilcoxson - Piedmont CA, US
Andrew Bailey - Pleasanton CA, US
Alan Schoepp - Ben Lomond CA, US

International Classification:

H01L021/306

US Classification:

156/345490

Abstract:

A plasma processing system for processing a substrate, is disclosed. The plasma processing system includes a single chamber, substantially azimuthally symmetric plasma processing chamber within which a plasma is both ignited and sustained for the processing. The plasma processing chamber has no separate plasma generation chamber. The plasma processing chamber has an upper end and a lower end. The plasma processing chamber includes a material that does not substantially react with the reactive gas chemistries that are delivered into the plasma processing chamber. In addition, the reactant gases that are flown into the plasma processing chamber are disclosed.

US Patent:

20040158954, Aug 19, 2004

Filed:

Feb 19, 2003

Appl. No.:

10/367908

Inventors:

Andrew Bailey - Bonney Lake WA, US
John Lacroix - Calgary, CA

International Classification:

A47L009/02

US Classification:

015/415100, 015/394000

Abstract:

A novel vacuum attachment for vacuuming planar elements of varying widths is provided. The attachment comprises a hollow member having a first end adapted for attachment to a vacuum cleaner hose and a second end having one or more elongate apertures formed therein and adapted for receiving a planar element. Each elongate aperture comprising a pair of parallel arms having a hollow interior with opposing and facing openings, each opening being in communication with the elongate aperture and with the first end. The aperture is sufficiently long to accept a relatively wide planar element. The attachment further comprises adjustment means for selectively adjusting the effective length of the aperture which enables the attachment to accommodate planar elements of varying widths. In a preferred embodiment, the length adjustment means comprises a sliding member slidably positioned over the second end for selectively blocking a longitudinal portion of the aperture.

US Patent:

20060128152, Jun 15, 2006

Filed:

Mar 9, 2005

Appl. No.:

11/076725

Inventors:

Yunsang Kim - San Jose CA, US
Andrew Bailey - Pleasanton CA, US
Hyungsuk Yoon - San Jose CA, US
Arthur Howald - Pleasanton CA, US

Assignee:

LAM RESEARCH CORPORATION - FREMONT CA

International Classification:

H01L 21/302
H01L 21/461

US Classification:

438690000

Abstract:

A method of etching a conductive layer includes converting at least a portion of the conductive layer and etching the conductive layer to substantially remove the converted portion of the conductive layer and thereby expose a remaining surface. The remaining surface has an average surface roughness of less than about 10 nm. A system for etching a conductive layer is also disclosed.

US Patent:

20070048447, Mar 1, 2007

Filed:

Jul 31, 2006

Appl. No.:

11/461415

Inventors:

Alan Lee - San Jose CA, US
Andrew Bailey - Pleasanton CA, US
William Thie - Mountain View CA, US
Yunsang Kim - Monte Sereno CA, US
Yezdi Dordi - Palo Alto CA, US

International Classification:

B05D 3/10
B05D 1/32
C23C 16/00

US Classification:

427305000, 427282000, 427372200, 118715000

Abstract:

A method for forming copper on a substrate including inputting a copper source solution into a mixer, inputting a reducing solution into the mixer, mixing copper source solution and the reducing solution to form a plating solution having a pH of greater than about 6.5 and applying the plating solution to a substrate, the substrate including a catalytic layer wherein applying the plating solution to the substrate includes forming a catalytic layer, maintaining the catalytic layer in a controlled environment and forming copper on the catalytic layer. A system for forming copper structures is also disclosed.

US Patent:

20070068900, Mar 29, 2007

Filed:

May 24, 2006

Appl. No.:

11/440561

Inventors:

Yunsang Kim - Monte Sereno CA, US
Andrew Bailey - Pleasanton CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

C23F 1/00

US Classification:

216067000, 156345430, 156345350

Abstract:

Improved mechanisms of removal of etch byproducts, dielectric films and metal films near the substrate bevel edge, and etch byproducts on substrate backside and chamber interior is provided to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. An exemplary plasma etch processing chamber configured to clean a bevel edge of a substrate is provided. The chamber includes a bottom edge electrode surrounding a substrate support in the plasma processing chamber, wherein the substrate support is configured to receive the substrate and the bottom edge electrode and the substrate support are electrically isolated from each other by a bottom dielectric ring. The chamber also includes a top edge electrode surrounding a gas distribution plate opposing the substrate support, wherein the top edge electrode and the gas distribution plate are electrically isolated from each other by a top dielectric ring, and the top edge electrode and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate.

US Patent:

20080050923, Feb 28, 2008

Filed:

Aug 25, 2006

Appl. No.:

11/510309

Inventors:

Yunsang Kim - Monte Sereno CA, US
Andrew Bailey - Pleasanton CA, US
Jack Chen - Fremont CA, US

Assignee:

LAM Research Corporation - Fremont CA

International Classification:

H01L 21/461
H01L 21/302
C03C 25/68

US Classification:

438706, 438710, 438712, 216 58, 216 67

Abstract:

A method for etching a bevel edge of a substrate is provided. A patterned photoresist mask is formed over the etch layer. The bevel edge is cleaned comprising providing a cleaning gas comprising at least one of a CO, CO, CH, H, NH, CHFand a combination thereof, forming a cleaning plasma from the cleaning gas, and exposing the bevel edge to the cleaning plasma. Features are etched into the etch layer through the photoresist features and the photoresist mask is removed.

US Patent:

20080156772, Jul 3, 2008

Filed:

Dec 29, 2006

Appl. No.:

11/618572

Inventors:

Yunsang Kim - Monte Sereno CA, US
Jack Chen - Fremont CA, US
Grace Fang - Fremont CA, US
Andrew Bailey - Pleasanton CA, US

International Classification:

H01L 21/306
C23F 1/02

US Classification:

216 71, 15634548

Abstract:

Methods and apparatus for remedying arc-related damage to the substrate during plasma bevel etching. A plasma shield is disposed above the substrate to prevent plasma, which is generated in between two annular grounded plates, from reaching the exposed metallization on the substrate. Additionally or alternatively, a carbon-free fluorinated process source gas may be employed and/or the RF bias power may be ramped up gradually during plasma generation to alleviate arc-related damage during bevel etching. Also additionally or alternatively, helium and/or hydrogen may be added to the process source gas to alleviate arc-related damage during bevel etching.

US Patent:

20080190448, Aug 14, 2008

Filed:

Feb 8, 2007

Appl. No.:

11/672922

Inventors:

Yunsang Kim - Monte Sereno CA, US
Andrew Bailey - Pleasanton CA, US
Greg Sexton - Fremont CA, US
Keechan Kim - Dublin CA, US
Andras Kuthi - Thousand Oaks CA, US

International Classification:

B08B 6/00

US Classification:

134 11, 134198

Abstract:

An apparatus for removing material on a bevel of a wafer is provided. A wafer support with a diameter that is less than the diameter of the wafer, wherein the wafer support is on a first side of the wafer, and wherein an outer edge of the wafer extends beyond the wafer support around the wafer is provided. An RF power source is electrically connected to the wafer. A central cover is spaced apart from the wafer support. A first electrically conductive ring is on the first side of and spaced apart from the wafer. A second electrically conductive ring is spaced apart from the wafer. An electrically conductive liner surrounds the outer edge of the wafer. A switch is between the liner and ground, allowing the liner to be switched from being grounded to floating.