Andrew M Hoff

US Patent:

6967176, Nov 22, 2005

Filed:

Oct 13, 2003

Appl. No.:

10/605609

Inventors:

Andrew M. Hoff - Tampa FL, US

Assignee:

University of South Florida - Tampa FL

International Classification:

H01L021/31
H01L021/469

US Classification:

438778, 438906

Abstract:

Method and apparatus for forming thin silicon oxide films on silicon carbide substrates utilizing an afterglow thermal reactor. The method of forming thin silicon oxide film includes the steps of loading a silicon carbide substrate within a tube, which tube is heated, and the contents pressure is controlled. An oxidizing gas is then passed through an afterglow reactor source or microwave cavity where the gas achieves an excited state of energy. When the neutral species of the excited gas contact the silicon carbide substrate within the heated region of the the tube, a thin silicon oxide film forms on the substrate, at a faster rate and lower temperature than has been known. The tube contents are maintained at a temperature between 600 C. to 1,200 C. , and at a pressure less than 50 torr.

US Patent:

7769440, Aug 3, 2010

Filed:

Sep 10, 2003

Appl. No.:

10/605126

Inventors:

Andrew M. Hoff - Tampa FL, US
Richard Gilbert - Tampa FL, US
Richard Heller - Tampa FL, US
Mark J. Jaroszeski - Tampa FL, US

Assignee:

University of South Florida - Tampa FL

International Classification:

A61N 1/30

US Classification:

604 20

Abstract:

The present invention is a device for electromanipulation of chemical species in vivo relative to a target tissue including a nonconductive, conformable array base adapted to be placed coincident to the target tissue, a plurality of electrode elements projecting from the array base towards the target tissue, the electrode elements addressable individually, an electrical source coupled to the plurality of electrodes, a control means interposed between the electrical source and the plurality of electrode elements and in circuit communication therein, the control means adapted to establish an electrical potential between at least two electrodes, and a delivery means adapted to introduce chemical species to the target tissue.

US Patent:

8235966, Aug 7, 2012

Filed:

Aug 2, 2010

Appl. No.:

12/848703

Inventors:

Andrew M. Hoff - Tampa FL, US
Richard Gilbert - Tampa FL, US
Richard Heller - Norfolk VA, US
Mark J. Jaroszeski - Wesley Chapel FL, US

Assignee:

University of South Florida - Tampa FL

International Classification:

A61M 31/00
A61N 1/30

US Classification:

604501, 604 20, 607 3

Abstract:

The present invention is a method for electromanipulation of chemical species in vivo relative to a target tissue utilizing a nonconductive, conformable array base adapted to be placed coincident to the target tissue, a plurality of electrode elements projecting from the array base towards the target tissue, the electrode elements addressable individually, an electrical source coupled to the plurality of electrodes, a control means interposed between the electrical source and the plurality of electrode elements and in circuit communication therein, the control means adapted to establish an electrical potential between at least two electrodes, and a delivery means adapted to introduce chemical species to the target tissue.

US Patent:

8348942, Jan 8, 2013

Filed:

Sep 15, 2009

Appl. No.:

12/559892

Inventors:

Mark J. Jaroszeski - Wesley Chapel FL, US
Gabriel A. Lopez-Diaz - Wesley Chapel FL, US
Richard J. Connolly - Riverview FL, US
Andrew M. Hoff - Tampa FL, US

Assignee:

University of South Florida - Tampa FL

International Classification:

A61B 18/18

US Classification:

606 43, 606 36

Abstract:

A device and method to cause hair loss or prevent or inhibit hair growth. The invention uses plasma (ionized gas) that is generated by flowing gas in close proximity to an electrode that has a high potential applied to it. The result is a stream of charged gas particles that are directed to the skin that contains hair. The flowing stream of gas is held above the surface of the skin. Additionally, a grounded conductive material is affixed to the skin to dissipate any charge buildup on the skin and focus the plasma.

US Patent:

8455228, Jun 4, 2013

Filed:

Sep 10, 2008

Appl. No.:

12/207846

Inventors:

Mark Jaroszeski - Wesley Chapel FL, US
Gabriel A. Lopez-Diaz - Wesley Chapel FL, US
Richard J. Connolly - Riverview FL, US
Andrew M. Hoff - Tampa FL, US

Assignee:

University of South Florida - Tampa FL

International Classification:

C12N 13/00

US Classification:

4351736, 4351732, 4351734, 4351735

Abstract:

A method for facilitating a delivery of a molecule into an interior space of a cell includes the steps of introducing a molecule into a biological structure comprising a cell and applying a substantially continuous low-level electric field, in the form of non-thermal plasma (ionized gas) generated by a direct current voltage applied to an electrode, to the molecule and biological structure. The field is applied for a duration sufficient to effect a change in porosity the cell of the biological structure sufficient to facilitate an entry of a desired molecule into an interior thereof.

US Patent:

20120176146, Jul 12, 2012

Filed:

Jan 6, 2012

Appl. No.:

13/345050

Inventors:

ELENA I. OBORINA - Tampa FL, US
Andrew Hoff - Tampa FL, US

Assignee:

UNIVERSITY OF SOUTH FLORIDA - Tampa FL

International Classification:

G01R 27/26

US Classification:

324658

Abstract:

Embodiments of the subject method and apparatus relate to a sequence of noncontact Corona-Kelvin Metrology that allows the determination and monitoring of interface properties in dielectric/wide band gap semiconductor structures. The technique involves the incremental application of precise and measured quantities of corona charge, Q, onto the dielectric surface followed by determination of the contact potential difference, V, as the material structure response. The V-Q characteristics obtained are used to extract the surface barrier, V, response related to the applied corona charge. An intersection of the V-Qcharacteristic obtained in the dark with the V-Qcharacteristic representing the dielectric response is determined. The specific V-Qdependence surrounding the reference Vvalue is obtained and the dielectric interface trap density and its spectrum is determined. A method and apparatus to quantify and separate trapped charge components is provided.

US Patent:

46734562, Jun 16, 1987

Filed:

Sep 17, 1985

Appl. No.:

6/777032

Inventors:

John E. Spencer - Plano TX
Richard A. Borel - Garland TX
Kenneth E. Linxwiler - McKinney TX
Andrew M. Hoff - State College PA

Assignee:

Machine Technology, Inc. - Parsippany NJ

International Classification:

H01L 21306
B44C 122

US Classification:

156345

Abstract:

A microwave apparatus for generating plasma afterglows for stripping and/or etching of photoresist and semiconductor material at a sufficiently high rate to allow single wafer processing in a fully automated reactor. The apparatus includes a stripping/etching chamber for plasma afterglow stripping of photoresist and selective isotropic etching of semiconductor material, such as polysilicon and silicon nitride, using a variety of etchant compositions which form reactive species in a plasma. In addition, the apparatus may be employed for anisotropic etching for semiconductive material by decoupling etchant generation from ion production and acceleration by using two plasma sources, i. e. , microwave power and radio frequency (RF) power. Anisotropic etching is carried out in an etching chamber which subjects, in situ, a plasma afterglow to RF power and which is designed to operate in the reactive ion etch mode.

US Patent:

47769238, Oct 11, 1988

Filed:

Jan 20, 1987

Appl. No.:

7/005034

Inventors:

John E. Spencer - Plano TX
Scott S. Miller - Austin TX
Woodie J. Sutton - Denton TX
Andrew M. Hoff - State College PA

Assignee:

Machine Technology, Inc. - Parsippany NJ

International Classification:

B44C 122
C03C 1500
C03C 2506

US Classification:

156643

Abstract:

In semiconductor treatment apparatus with a plasma generating zone, a treatment zone, and a bent path connecting the two so as to block direct transmission of ultraviolet light from the plasma generating zone to the workpiece in the treatment zone, a light trap is provided to suppress indirect transmission of light as by reflection or by transmission within transparent walls of a conduit defining the bent path.