Andrew Steven Koehler

US Patent:

20150221727, Aug 6, 2015

Filed:

Apr 29, 2014

Appl. No.:

14/265214

Inventors:

Francis J. Kub - Arnold MD, US
Travis J. Anderson - Alexandria VA, US
Andrew D. Koehler - Alexandria VA, US
Karl D. Hobart - Upper Marlboro MD, US

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy - Arlington VA

International Classification:

H01L 29/20
H01L 29/205
H01L 29/66
H01L 29/778

Abstract:

An inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising a gallium-polar III-Nitride grown epitaxially on a substrate, a barrier, a two-dimensional hole gas in the barrier layer material at the heterointerface of the first material, and wherein the gallium-polar III-Nitride material comprises III-Nitride epitaxial material layers grown in such a manner that when GaN is epitaxially grown the top surface of the epitaxial layer is gallium-polar. A method of making a P-channel III-nitride field effect transistor with hole carriers in the channel comprising selecting a face of a substrate so that the gallium-polar (0001) face is the dominant face for growth of III-Nitride epitaxial layer growth material, growing a GaN epitaxial layer, doping, growing a barrier, etching, forming a contact, performing device isolation, defining a gate opening, defining gate metal, making a contact window, and depositing and defining a thick metal.

US Patent:

20150221760, Aug 6, 2015

Filed:

Feb 9, 2015

Appl. No.:

14/617510

Inventors:

Francis J. Kub - Arnold MD, US
Travis J. Anderson - Alexandria VA, US
Andrew D. Koehler - Alexandria VA, US
Karl D. Hobart - Alexandria VA, US

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy - Washington DC

International Classification:

H01L 29/778
H01L 29/20
H01L 29/205
H01L 29/207
H01L 29/201
H01L 21/762
H01L 21/02
H01L 21/306
H01L 21/265
H01L 21/3065
H01L 29/36
H01L 29/66
H01L 29/04

Abstract:

An inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising a gallium-polar III-Nitride first material, a barrier material layer, a two-dimensional hole gas in the barrier layer, and wherein the gallium-polar material comprises one or more III-Nitride epitaxial material layers grown such that when GaN is epitaxially grown the top surface of the epitaxial layer is gallium-polar. A method of making an inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising selecting a face or offcut orientation of a substrate so that the gallium-polar (0001) face is the dominant face, growing a nucleation layer, growing a gallium-polar epitaxial layer, doping the epitaxial layer, growing a barrier layer, etching the GaN, forming contacts, performing device isolation, defining a gate opening, depositing and defining gate metal, making a contact window, depositing and defining a thick metal.

US Patent:

20140284552, Sep 25, 2014

Filed:

Feb 12, 2014

Appl. No.:

14/178375

Inventors:

Francis J. Kub - Arnold MD, US
Travis J. Anderson - Alexandria VA, US
Andrew D. Koehler - Alexandria VA, US

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy - Arlington VA

International Classification:

H01L 29/16
H01L 29/66
H01L 29/737

US Classification:

257 26, 438312

Abstract:

A graphene base transistor with reduced collector area comprising an electron injection region, an electron collection region, and a base region wherein the base region comprises one or more sheets of graphene and wherein the base region is intermediate the electron injection region and the electron collection region and forms electrical interfaces therewith. A method of making a graphene base transistor with reduced collector area comprising forming an electron injection region, forming an electron collection region, and forming a base region wherein the base region comprises one or more sheets of graphene and wherein the base region is intermediate the electron injection region and the electron collection region and forms electrical interfaces therewith.

US Patent:

20140264379, Sep 18, 2014

Filed:

Jan 31, 2014

Appl. No.:

14/169334

Inventors:

Francis J. Kub - Arnold MD, US
Travis J. Anderson - Alexandria VA, US
Andrew D. Koehler - Alexandria VA, US
Karl D. Hobart - Upper Marlboro MD, US

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy - Arlington VA

International Classification:

H01L 29/78
H01L 29/778

US Classification:

257 77, 257 76, 257194

Abstract:

A non-inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising a nitrogen-polar III-Nitride first material, a barrier material layer, a two-dimensional hole gas in the barrier layer, and wherein the nitrogen-polar III-Nitride material comprises one or more III-Nitride epitaxial material layers grown in such a manner that when GaN is epitaxially grown the top surface of the epitaxial layer is nitrogen-polar. A method of making a P-channel III-nitride field effect transistor with hole carriers in the channel comprising selecting a face or offcut orientation of a substrate so that the nitrogen-polar (001) face is the dominant face, growing a nucleation layer, growing a GaN epitaxial layer, doping the epitaxial layer, growing a barrier layer, etching the GaN, forming contacts, performing device isolation, defining a gate opening, depositing and defining gate metal, making a contact window, depositing and defining a thick metal.