Andrew L Ray

US Patent:

6903350, Jun 7, 2005

Filed:

Jun 10, 2004

Appl. No.:

10/865061

Inventors:

Bo H. Vanderberg - Gloucester MA, US
Andrew M. Ray - Newburyport MA, US
Kevin W. Wenzel - Belmont MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01L021/324

US Classification:

25049221, 2504921, 2504922, 25049222, 25049223, 2504923, 25044211

Abstract:

Ion implantation systems and scanning systems therefor are provided, in which focus adjustment apparatus is provided to dynamically adjust a focal property of an ion beam to compensate for at least one time varying focal property of a scanner. Methods are provided for providing a scanned ion beam to a workpiece, comprising dynamically adjusting a focal property of an ion beam, scanning the ion beam to create a scanned ion beam, and directing the scanned ion beam toward a workpiece.

US Patent:

6953942, Oct 11, 2005

Filed:

Sep 20, 2004

Appl. No.:

10/944989

Inventors:

Michael A. Graf - Belmont MA, US
Andrew M. Ray - Newburyport MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01J037/302

US Classification:

25049221, 25044211

Abstract:

The present invention is directed to implanting ions in a workpiece in a serial implantation process in a manner that produces a scan pattern that resembles the size, shape and/or other dimensional aspects of the workpiece. This improves efficiency and yield as an ion beam that the workpiece is oscillated through does not significantly “overshoot” the workpiece. The scan pattern may be slightly larger than the workpiece, however, so that inertial effects associated with changes in direction, velocity and/or acceleration of the workpiece as the workpiece reverses direction in oscillating back and forth are accounted for within a small amount of “overshoot”. This facilitates moving the workpiece through the ion beam at a relatively constant velocity which in turn facilitates substantially more uniform ion implantation.

US Patent:

6992308, Jan 31, 2006

Filed:

Feb 27, 2004

Appl. No.:

10/788861

Inventors:

Michael A. Graf - Cambridge MA, US
Andrew M. Ray - Newburyport MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01J 37/317
G21G 5/00

US Classification:

25049221, 2504923, 2504922

Abstract:

The present invention is directed to modulating ion beam current in an ion implantation system to mitigate non-uniform ion implantations, for example. Multiple arrangements are revealed for modulating the intensity of the ion beam. For example, the volume or number of ions within the beam can be altered by biasing one or more different elements downstream of the ion source. Similarly, the dosage of ions within the ion beam can also be manipulated by controlling elements more closely associated with the ion source. In this manner, the implantation process can be regulated so that the wafer can be implanted with a more uniform coating of ions.

US Patent:

20060097196, May 11, 2006

Filed:

Nov 8, 2004

Appl. No.:

10/983461

Inventors:

Michael Graf - Cambridge MA, US
Andrew Ray - Newburyport MA, US

International Classification:

H01J 37/317

US Classification:

250492210

Abstract:

The present invention is directed to implanting ions in a workpiece in a serial implantation process in a manner that produces one or more scan patterns on the workpiece that resemble the size, shape and/or other dimensional aspects of the workpiece. Further, the scan patterns are interleaved with one another and can continue to be produced until the entirety of the workpiece is uniformly implanted with ions.