Andy Hooper

US Patent:

7132372, Nov 7, 2006

Filed:

Jul 29, 2004

Appl. No.:

10/901589

Inventors:

Steven M. Smith - Gilbert AZ, US
Diana J. Convey - Laveen AZ, US
Andy E. Hooper - Phoenix AZ, US
Yi Wei - Chandler AZ, US

Assignee:

Freescale Semiconductor, Inc. - Austin TX

International Classification:

H01L 21/31

US Classification:

438767, 438287, 438906, 257E21229

Abstract:

A method for preparing a semiconductor substrate surface () for semiconductor device fabrication, includes providing a semiconductor substrate () having a pure Ge surface layer () or a Ge-containing surface layer (), such as SiGe. The semiconductor substrate () is cleaned using a first oxygen plasma process () to remove foreign matter () from the surface () of the substrate (). The substrate surface () is next immersed in a hydrochloric acid solution () to remove additional foreign matter () from the surface () of the substrate (). The immersion step is followed by a second oxygen plasma etch process (), passivate the surface with a passivation layer (), and provide for an atomically smooth surface for subsequent epitaxial or gate dielectric growth.

US Patent:

7432024, Oct 7, 2008

Filed:

Jun 12, 2006

Appl. No.:

11/423621

Inventors:

Albert Alec Talin - Scottsdale AZ, US
Jeffrey H. Baker - Chandler AZ, US
William J. Dauksher - Mesa AZ, US
Andy Hooper - Chandler AZ, US
Douglas J. Resnick - Phoenix AZ, US

Assignee:

Freescale Semiconductor, Inc. - Austin TX

International Classification:

G03F 1/00
G03C 5/00

US Classification:

430 5, 430394

Abstract:

This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, photonic devices, and more particularly to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template () is formed having a substrate (), a transparent conductive layer () formed on a surface () of the substrate () by low pressure sputtering to a thickness that allows for preferably 90% transmission of ultraviolet light therethrough, and a patterning layer () formed on a surface () of the transparent conductive layer (). The template () is used in the fabrication of a semiconductor device () for affecting a pattern in device () by positioning the template () in close proximity to semiconductor device () having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief image present on the template. Radiation is then applied through the template so as to cure portions of the radiation sensitive material and define the pattern in the radiation sensitive material. The template () is then removed to complete fabrication of semiconductor device ().

US Patent:

20040033424, Feb 19, 2004

Filed:

Aug 15, 2002

Appl. No.:

10/222734

Inventors:

Albert Talin - Scottsdale AZ, US
Jeffrey Baker - Chandler AZ, US
William Dauksher - Mesa AZ, US
Andy Hooper - Chandler AZ, US
Douglas Resnick - Phoenix AZ, US

International Classification:

G03F001/08
C23C014/34
G02B001/12
B29D011/00
B29C035/08

US Classification:

430/005000, 204/192290, 430/311000, 430/319000, 430/320000, 430/322000, 264/001270, 264/001380, 264/496000

Abstract:

This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, photonic devices, and more particularly to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template () is formed having a substrate (), a transparent conductive layer () formed on a surface () of the substrate () by low pressure sputtering to a thickness that allows for preferably 90% transmission of ultraviolet light therethrough, and a patterning layer () formed on a surface () of the transparent conductive layer (). The template () is used in the fabrication of a semiconductor device () for affecting a pattern in device () by positioning the template () in close proximity to semiconductor device () having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief image present on the template. Radiation is then applied through the template so as to cure portions of the radiation sensitive material and define the pattern in the radiation sensitive material. The template () is then removed to complete fabrication of semiconductor device ().