Ann Turbeville Campbell

US Patent:

58444165, Dec 1, 1998

Filed:

Nov 2, 1995

Appl. No.:

8/552184

Inventors:

Ann N. Campbell - Albuquerque NM
Jerry M. Soden - Placitas NM

Assignee:

Sandia Corporation - Albuquerque NM

International Classification:

G01R 31302

US Classification:

324750

Abstract:

An ion-beam apparatus and method for analyzing and controlling integrated circuits. The ion-beam apparatus comprises a stage for holding one or more integrated circuits (ICs); a source means for producing a focused ion beam; and a beam-directing means for directing the focused ion beam to irradiate a predetermined portion of the IC for sufficient time to provide an ion-beam-generated electrical input signal to a predetermined element of the IC. The apparatus and method have applications to failure analysis and developmental analysis of ICs and permit an alteration, control, or programming of logic states or device parameters within the IC either separate from or in combination with applied electrical stimulus to the IC for analysis thereof. Preferred embodiments of the present invention including a secondary particle detector and an electron floodgun further permit imaging of the IC by secondary ions or electrons, and allow at least a partial removal or erasure of the ion-beam-generated electrical input signal.