Anthony J Defeo

US Patent:

6663736, Dec 16, 2003

Filed:

Nov 7, 2001

Appl. No.:

10/007606

Inventors:

Edward A. Ardini - Billerica MA
Anthony M. DeFeo - Nashua NH

Assignee:

Saint-Gobain Ceramics Plastics, Inc. - Worcester MA

International Classification:

B32B 3100

US Classification:

156153, 156 89

Abstract:

A method for making a single crystal structure. The method including selecting a plurality of single crystal components having a lattice unit cell repeated substantially throughout, the unit cell having a periodic arrangement of atoms defining a set of lattice planes. Determining the orientations of the lattice planes relative to each component. Machining each component along at least one of the set of lattice planes to define a pair of interface surfaces thereon. Applying bonding material to each interface surface. Assembling the components at their respective interface surfaces such that each pair of matching interface surfaces have an orientation substantially aligned along a common one of the set of lattice planes. Heating the components per a predetermined temperature profile until the bonding material melts and fuses the components together.

US Patent:

20030085120, May 8, 2003

Filed:

Nov 7, 2001

Appl. No.:

10/007605

Inventors:

Anthony DeFeo - Nashua NH, US

International Classification:

C25B009/00
H01L021/00

US Classification:

204/298110, 438/800000

Abstract:

A shield for protecting silicon wafers. The shield includes a plurality of single crystal shielding members having a lattice unit cell repeated substantially throughout. The unit cell has a periodic arrangement of atoms defining a set of lattice planes. The shielding members each include a pair of first interface surfaces having an orientation substantially aligned along one of the set of lattice planes. The shield also includes a plurality of single crystal structural members each having substantially the same lattice unit cell as that of the shielding members repeated substantially throughout. The structural members each include a pair of second interface surfaces having an orientation substantially aligned along the same one of the set of lattice planes. The plurality of shielding members and structural members are alternately bonded together at their respective first and second interface surfaces to define an enclosed area sized to receive the silicon wafers therein.