Arthur Jen Fung Chiang

US Patent:

6743703, Jun 1, 2004

Filed:

Sep 9, 2002

Appl. No.:

10/238104

Inventors:

Vladimir Rodov - Redondo Beach CA
Paul Chang - Saratoga CA
Jianren Bao - Fullerton CA
Wayne Y. W. Hsueh - San Jose CA
Arthur Ching-Lang Chiang - Saratoga CA
Geeng-Chuan Chern - Cupertino CA

Assignee:

APD Semiconductor, Inc. - San Jose CA

International Classification:

H01L 2974

US Classification:

438527, 257341, 257495, 257653, 257401, 257133, 257155, 257355

Abstract:

A two-terminal power diode has improved reverse bias breakdown voltage and on resistance includes a semiconductor body having two opposing surfaces and a superjunction structure therebetween, the superjunction structure including a plurality of alternating P and N doped regions aligned generally perpendicular to the two surfaces. The P and N doped regions can be parallel stripes or a mesh with each region being surrounded by doped material of opposite conductivity type. A diode junction associated with one surface can be an anode region with a gate controlled channel region connecting the anode region to the superjunction structure. Alternatively, the diode junction can comprise a metal forming a Schottky junction with the one surface. The superjunction structure is within the cathode and spaced from the anode. The spacing can be varied during device fabrication.