Ashish Shah

US Patent:

7171434, Jan 30, 2007

Filed:

Sep 9, 2002

Appl. No.:

10/238804

Inventors:

Rahim Ibrahim - Mountain View CA, US
Tuan Nguyen - San Jose CA, US
Ashish Shah - San Ramon CA, US
Ranjit Ghate - Oakland CA, US
Chan Ng - San Jose CA, US

Assignee:

Network Appliance, Inc. - Sunnyvale CA

International Classification:

G06F 17/30
G06F 7/00
G06F 12/00

US Classification:

707204, 707 1, 711100, 711162

Abstract:

A storage virtualization system for accessing at least one storage device for a virtual logical unit (VLUN) from at least one host. The system includes at least one upstream processing element (UPE) which is adapted for coupling to a corresponding host server. The system is further adapted for coupling to at least one storage device. The controller also includes a primary central processing element (CPE) that can be configurably coupled to the UPEs. The primary CPE permits data transfer to occur between a host and a storage device via the corresponding UPE. The controller further includes a backup CPE that can be configurably coupled to the UPEs. The backup CPE is configurable to permit the data transfer when the primary CPE becomes unavailable.

US Patent:

7589306, Sep 15, 2009

Filed:

Feb 12, 2008

Appl. No.:

12/030055

Inventors:

Vincent Venezia - Sunnyvale CA, US
Hsin-Chih Tai - Cupertino CA, US
Duli Mao - Sunnyvale CA, US
Wei Dong Qian - Los Gatos CA, US
Ashish Shah - Milpitas CA, US
Howard Rhodes - San Martin CA, US

Assignee:

OmniVision Technologies, Inc. - Santa Clara CA

International Classification:

H01L 27/00
H01L 31/00
H01J 5/16

US Classification:

2502081, 250216, 2502141, 257432, 257294, 348 69

Abstract:

An image sensor includes an optical sensor region, a stack of dielectric and metal layers, and a buried focusing layer. The optical sensor is disposed within a semiconductor substrate. The stack of dielectric and metal layers are disposed on the semiconductor substrate above the optical sensor region. The metal layers include optical pass-throughs aligned to expose an optical path through the stack form a top dielectric layer through to the optical sensor region. The buried focusing layer is disposed over a conforming metal layer of the metal layers within the stack. The buried focusing layer includes a curved surface conformed by the optical pass-through of the conforming metal layer to focus light onto the optical sensor region.

US Patent:

7617252, Nov 10, 2009

Filed:

May 29, 2006

Appl. No.:

11/420781

Inventors:

Rahim Ibrahim - Mountain View CA, US
Tuan Nguyen - San Jose CA, US
Ashish Shah - San Ramon CA, US
Ranjit Ghate - Oakland CA, US
Chan Ng - San Jose CA, US

Assignee:

NetApp, Inc. - Sunnyvale CA

International Classification:

G06F 17/30

US Classification:

707200, 707 10

Abstract:

A storage virtualization system for accessing at least one storage device for a virtual logical unit (VLUN) from at least one host. The system includes at least one upstream processing element (UPE) which is adapted for coupling to a corresponding host server. The system is further adapted for coupling to at least one storage device. The controller also includes a primary central processing element (CPE) that can be configurably coupled to the UPEs. The primary CPE permits data transfer to occur between a host and a storage device via the corresponding UPE. The controller further includes a backup CPE that can be configurably coupled to the UPEs. The backup CPE is configurable to permit the data transfer when the primary CPE becomes unavailable.

US Patent:

7777197, Aug 17, 2010

Filed:

Jun 22, 2006

Appl. No.:

11/425974

Inventors:

Amir Al-Bayati - San Jose CA, US
Lester A. D'Cruz - San Jose CA, US
Alexandros T. Demos - Fremont CA, US
Dale R. Dubois - Los Gatos CA, US
Khaled A. Elsheref - San Jose CA, US
Naoyuki Iwasaki - Narita, JP
Hichem M'Saad - Santa Clara CA, US
Juan Carlos Rocha-Alvarez - Sunnyvale CA, US
Ashish Shah - Santa Clara CA, US
Takashi Shimizu - Kawasaki, JP

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G01N 23/00

US Classification:

2504431, 2504923, 438787, 1563454

Abstract:

Methods and apparatus for electron beam treatment of a substrate are provided. An electron beam apparatus that includes a vacuum chamber, at least one thermocouple assembly in communication with the vacuum chamber, a heating device in communication with the vacuum chamber, and combinations thereof are provided. In one embodiment, the vacuum chamber comprises an electron source wherein the electron source comprises a cathode connected to a high voltage source, an anode connected to a low voltage source, and a substrate support. In another embodiment, the vacuum chamber comprises a grid located between the anode and the substrate support. In one embodiment the heating device comprises a first parallel light array and a second light array positioned such that the first parallel light array and the second light array intersect. In one embodiment the thermocouple assembly comprises a temperature sensor made of aluminum nitride.

US Patent:

7825966, Nov 2, 2010

Filed:

Oct 15, 2007

Appl. No.:

11/872521

Inventors:

Sohei Manabe - San Jose CA, US
Ashish Shah - Milpitas CA, US
Sasidhar Saladi - Santa Clara CA, US
William Qian - Los Gatos CA, US
Hidetoshi Nozaki - Santa Clara CA, US
Nagaraja Satyadev - San Jose CA, US
Hsin-Chih (Dyson) Tai - Cupertino CA, US
Howard M. Rhodes - San Martin CA, US

Assignee:

OmniVision Technologies, Inc. - Santa Clara CA

International Classification:

H04N 5/335

US Classification:

348248, 348309

Abstract:

An image sensor has at least two photodiodes in each unit pixel. A high dynamic range is achieved by selecting different exposure times for the photodiodes. Additionally, blooming is reduced. The readout timing cycle is chosen so that the short exposure time photodiodes act as drains for excess charge overflowing from the long exposure time photodiodes. To improve draining of excess charge, the arrangement of photodiodes may be further selected so that long exposure time photodiodes are neighbored along vertical and horizontal directions by short exposure time photodiodes. A micro-lens array may also be provided in which light is preferentially coupled to the long exposure time photodiodes to improve sensitivity.

US Patent:

7875918, Jan 25, 2011

Filed:

Apr 24, 2009

Appl. No.:

12/430006

Inventors:

Vincent Venezia - Sunnyvale CA, US
Ashish Shah - Milpitas CA, US
Rongsheng Yang - Palo Alto CA, US
Duli Mao - Sunnyvale CA, US
Yin Qian - Milpitas CA, US
Hsin-Chih Tai - Cupertino CA, US
Howard E. Rhodes - San Martin CA, US

Assignee:

OmniVision Technologies, Inc. - Santa Clara CA

International Classification:

H01L 31/062

US Classification:

257294, 257E27133

Abstract:

An image sensor pixel includes a substrate, a first epitaxial layer, a collector layer, a second epitaxial layer and a light collection region. The substrate is doped to have a first conductivity type. The first epitaxial layer is disposed over the substrate and doped to have the first conductivity type as well. The collector layer is selectively disposed over at least a portion of the first epitaxial layer and doped to have a second conductivity type. The second epitaxial layer is disposed over the collector layer and doped to have the first conductivity type. The light collection region collects photo-generated charge carriers and is disposed within the second epitaxial layer. The light collection region is also doped to have the second conductivity type.

US Patent:

7909595, Mar 22, 2011

Filed:

Mar 15, 2007

Appl. No.:

11/686901

Inventors:

Andrzei Kaszuba - San Jose CA, US
Juan Carlos Rocha-Alvarez - Sunnyvale CA, US
Thomas Nowak - Cupertino CA, US
Sanjeev Baluja - San Francisco CA, US
Ashish Shah - Santa Clara CA, US
Inna Shmurun - Foster City CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B29C 35/08

US Classification:

4251744, 2504922, 250504 R

Abstract:

Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other. The substrate processing tool may further comprise one or more reflectors adapted to generate a flood pattern of ultraviolet radiation over the substrate that has complementary high and low intensity areas which combine to generate a substantially uniform irradiance pattern if rotated. Other embodiments are also disclosed.

US Patent:

8183510, May 22, 2012

Filed:

Sep 14, 2009

Appl. No.:

12/559307

Inventors:

Vincent Venezia - Sunnyvale CA, US
Hsin-Chih Tai - San Jose CA, US
Duli Mao - Sunnyvale CA, US
Ashish Shah - Milpitas CA, US
Howard E. Rhodes - San Martin CA, US

Assignee:

OmniVision Technologies, Inc. - Santa Clara CA

International Classification:

H01L 27/00
H01L 31/00
H01J 5/16

US Classification:

2502081, 250216, 2502141, 257432, 257294, 257460, 348 69

Abstract:

An image sensor includes an optical sensor region, a stack of dielectric and metal layers, and an embedded layer. The optical sensor is disposed within a semiconductor substrate. The stack of dielectric and metal layers are disposed on the front side of the semiconductor substrate above the optical sensor region. The embedded focusing layer is disposed on the backside of the semiconductor substrate in a Backside Illuminated (BSI) image sensor, supported by a support grid, or a support grid composed of the semiconductor substrate.