The present invention provides a lead frame for use in packaging a circuit having a discrete component, and a method of manufacture thereof. In one embodiment, the lead frame includes a lead support structure and a plurality of severable leads that are coupled to the lead support structure. The plurality of severable leads extend inward from the lead support structure to predetermined locations corresponding to terminals of the discrete component.
Gaas Mosfet Having Low Capacitance And On-Resistance And Method Of Manufacturing The Same
Ashraf W. Lotfi - Bridgewater NJ Jian Tan - Bridgewater NJ
Assignee:
Agere Systems Guardian Corp. - Orlando FL
International Classification:
H01L 2978
US Classification:
257 57, 257 59, 257347
Abstract:
A metal-oxide semiconductor field effect transistor (MOSFET), a method of manufacturing the MOSFET and a power supply incorporating at least one such MOSFET. In one embodiment, the MOSFET includes: (1) a substrate having an epitaxial layer underlying a gate oxide layer, a portion of the epitaxial layer being a gate region of the MOSFET, (2) an N-type drift region located in the epitaxial layer laterally proximate the gate region and (3) source and drain regions located in the epitaxial layer and laterally straddling the gate and drift regions.
Method Of Making Integrated Circuit Having A Micromagnetic Device
Anatoly Feygenson - Hillsborough NJ Dean P. Kossives - Glen Gardner NJ Ashraf W. Lotfi - Bridgewater NJ Lynn F. Schneemeyer - Westfield NJ Michael L. Steigerwald - Martinsville NJ R. Bruce Van Dover - Maplewood NJ
Assignee:
Agere Systems Guardian Corporation - Orlando FL
International Classification:
H01L 2100
US Classification:
438 3, 257798, 257421
Abstract:
A method of manufacturing an integrated circuit and an integrated circuit employing the same. In one embodiment, the method of manufacturing the integrated circuit includes (1) conformally mapping a micromagnetic device, including a ferromagnetic core, to determine appropriate dimensions therefor, (2) depositing an adhesive over an insulator coupled to a substrate of the integrated circuit and (3) forming the ferromagnetic core of the appropriate dimensions over the adhesive.
Device Comprising Micromagnetic Components For Power Applications And Process For Forming Device
Robert William Filas - Bridgewater NJ Trifon M Liakopoulos - Kings Park NY Ashraf Wagih Lotfi - Bridgewater NJ
Assignee:
Agere Systems Inc. - Allentown PA
International Classification:
H01L 2102
US Classification:
205119, 205125, 205126
Abstract:
The process is provided involving formation of multilayer components in which a photoresist-type material is used not only as a conventional patterning material, but also as an insulating and/or planarizing material between magnetic or electrically conductive layers. A variety of integrated CMOS/micromagnetic components are thereby capable of being formed, including components containing planar inductors and transformers. Additionally, a particular technique is used to etch gold-containing seed layers from a substrate surface without damaging an electroplated copper coil. Also provided is a magnetic material particularly useful in devices such as inductors and transformers. The material is an amorphous iron-cobalt-phosphorus alloy having a composition of Co P Fe , where x+y+z=100, x is 5 to 15, y is 13 to 20, and z is the remainder. The alloy typically exhibits a coercivity of 0. 1 to 0. 5 Oe, an electrical resistivity of 100 to 150 -cm, and a saturation magnetization of about 16 to about 19 kG, all of which represent improvements over Permalloy.
Semiconductor Device Having Non-Power Enhanced And Power Enhanced Metal Oxide Semiconductor Devices And A Method Of Manufacture Therefor
Ashraf W. Lotfi - Bridgewater NJ Jian Tan - Bridgewater NJ
Assignee:
Agere Systems Inc. - Allentown PA
International Classification:
H01L 2976
US Classification:
257335, 257266, 257337, 257341
Abstract:
The present invention provides a semiconductor device and a method of manufacture therefor. The semiconductor device includes a non-power enhanced metal oxide semiconductor (non-PEMOS) device having first source/drain regions located in a semiconductor substrate, wherein the first source/drain regions include a first dopant profile. The semiconductor device further includes a power enhanced metal oxide semiconductor (PEMOS) device located adjacent the non-PEMOS device and having second source/drain regions located in the semiconductor substrate, wherein the second source/drain regions include the first dopant profile.
Micromagnetic Device Having Alloy Of Cobalt, Phosphorus And Iron
Robert W. Filas - Bridgewater NJ Trifon M. Liakopoulos - Long Beach NY Ashraf Lotfi - Bridgewater NJ
Assignee:
Agere Systems Inc. - Allentown PA
International Classification:
H01L 2900
US Classification:
257528, 257531, 257421, 336225
Abstract:
The process is provided involving formation of multilayer components in which a photoresist-type material is used not only as a conventional patterning material, but also as an insulating and/or planarizing material between magnetic or electrically conductive layers. A variety of integrated CMOS/micromagnetic components are thereby capable of being formed, including components containing planar inductors and transformers. Additionally, a particular technique is used to etch gold-containing seed layers from a substrate surface without damaging an electroplated copper coil. Also provided is a magnetic material particularly useful in devices such as inductors and transformers. The material is an amorphous iron-cobalt-phosphorus alloy having a composition of Co P Fe , where x+y+z=100, x is 5 to 15, y is 13 to 20, and z is the remainder. The alloy typically exhibits a coercivity of 0. 1 to 0. 5 Oe, an electrical resistivity of 100 to 150 -cm, and a saturation magnetization of about 16 to about 19 kG, all of which represent improvements over Permalloy.
Integrated Circuit Having A Micromagnetic Device And Method Of Manufacture Therefor
Dean P. Kossives - Glen Gardner NJ Ashraf W. Lotfi - Bridgewater NJ Lynn F. Schneemeyer - Westfield NJ Michael L. Steigerwald - Martinsville NJ R. Bruce Van Dover - Maplewood NJ
Assignee:
Agere Systems Inc. - Allentown PA
International Classification:
H01L 2100
US Classification:
438 3, 438800, 365145, 365157, 365158, 365171
Abstract:
An integrated circuit and method of manufacturing therefor. In one embodiment, the integrated circuit includes a substrate with an insulator and a capacitor formed over the substrate. The integrated circuit further includes an adhesive formed over the insulator. The integrated circuit still further includes a micromagnetic device. The micromagnetic device includes a ferromagnetic core formed over the adhesive. The adhesive forms a bond between the insulator and the ferromagnetic core to secure the ferromagnetic core to the substrate. The micromagnetic device also includes at least one winding, located proximate the ferromagnetic core, to impart a desired magnetic property to the ferromagnetic core. The micromagnetic device is electrically coupled to the capacitor.
Gaas Mosfet Having Low Capacitance And On-Resistance And Method Of Manufacturing The Same
Ashraf W. Lotfi - Bridgewater NJ Jian Tan - Bridgewater NJ
Assignee:
Agere Systems, Inc. - Allentown PA
International Classification:
H01L 2100
US Classification:
438149, 438454
Abstract:
A metal-oxide semiconductor field effect transistor (MOSFET), a method of manufacturing the MOSFET and a power supply incorporating at least one such MOSFET. In one embodiment, the MOSFET includes: (1) a substrate having an epitaxial layer underlying a gate oxide layer, a portion of the epitaxial layer being a gate region of the MOSFET, (2) an N-type drift region located in the epitaxial layer laterally proximate the gate region and (3) source and drain regions located in the epitaxial layer and laterally straddling the gate and drift regions.