Avraham Tr Amith

US Patent:

51700417, Dec 8, 1992

Filed:

Sep 20, 1990

Appl. No.:

7/585655

Inventors:

Avraham Amith - Roanoke VA
Charles Naselli - Roanoke VA
C. Scott Nevin - Albion IN

Assignee:

ITT Corporation - New York NY

International Classification:

H05B 102

US Classification:

219497

Abstract:

A method of accurately determining the temperature of a thin layer of bandgap material without requiring contact to the layer involves the use of optical radiation through the layer and the detection of optical absorption by the layer. The relationship between the temperature varying bandgap energy and the resulting optical absorption characteristics provides an indication of temperature independent of ambient temperature. Apparatus for performing high quality temperature detection and control is also provided.

US Patent:

48909335, Jan 2, 1990

Filed:

Feb 17, 1988

Appl. No.:

7/157196

Inventors:

Avraham Amith - Roanoke VA
Charles Naselli - Roanoke VA
C. Scott Nevin - Albion IN

Assignee:

ITT Corporation - New York NY

International Classification:

G01J 500
G01K 1100

US Classification:

374121

Abstract:

A method of accurately determining the temperature of a thin layer of bandgap material without requiring contact to the layer involves the use of optical radiation through the layer and the detection of optical absorption by the layer. The relationship between the temperature varying bandgap energy and the resulting optical absorption characteristics provides an indication of temperature independent of ambient temperature. Apparatus for performing high quality temperature detection and control is also provided.

US Patent:

50981994, Mar 24, 1992

Filed:

Aug 6, 1990

Appl. No.:

7/563812

Inventors:

Avraham Amith - Roanoke VA

Assignee:

ITT Corporation - New York NY

International Classification:

G01K 1100
G01J 500

US Classification:

374121

Abstract:

A method of accurately determining the temperature of a thin layer of bandgap material without requiring contact to the layer involves the use of optical radiation reflected off the bandgap material and the detection of the reflected energy. The relationship between the temperature varying bandgap energy and the resulting reflection characteristics provides an indication of temperature, independent of ambient temperature.

US Patent:

47086777, Nov 24, 1987

Filed:

Dec 27, 1985

Appl. No.:

6/814148

Inventors:

Richard E. Blank - Roanoke VA
Albert F. Tien - Salem VA
Avraham Amith - Roanoke VA

Assignee:

ITT Electro Optical Products, a division of ITT Corporation - Roanoke VA

International Classification:

H01J 9233

US Classification:

445 3

Abstract:

A method of determing the actual temperature of a layer of an infrared material, especially during heat cleaning, which includes measuring the thickness of the layer and the amount of radiation being emitted from it. An apparent temperature corresponding to a desired actual temperature is found from a curve of apparent temperature, which are derived from the radiation amount, versus thickness. The apparent temperature which corresponds to the desired actual temperature compensates for interference effects on the radiation measurement. A computer may be utilized to calculated the apparent temperature which corresponds to the desired actual temperature and to regulate and maintain the infrared material at the apparent temperature.

US Patent:

52988317, Mar 29, 1994

Filed:

Dec 31, 1985

Appl. No.:

6/825115

Inventors:

Avraham Amith - Roanoke VA

Assignee:

ITT Corporation - New York NY

International Classification:

H01J 3100
H01J 3126

US Classification:

313373

Abstract:

A method is provided of making a photoemissive cathode including bonding an electron emissive layer to a glass faceplate at an elevated temperature and pressure to form a cathode structure and cooling the cathode structure at a rate which will maintain stress between the electron emissive layer and the faceplate at or below a predetermined level in order to avoid brush marks and crosshatchings during subsequent processing steps. The cathode is cooled from a bonding temperature to room temperature in approximately twenty minutes or less.

US Patent:

52586022, Nov 2, 1993

Filed:

Mar 19, 1991

Appl. No.:

7/671343

Inventors:

Charles Naselli - Roanoke VA
Larry E. Reed - Roanoke VA
Avraham Amith - Roanoke VA

Assignee:

ITT Corporation - New York NY

International Classification:

H05B 102

US Classification:

219497

Abstract:

A method for sensitive and precise determination of the temperature of a thin layer or wafer of bandgap material, without requiring contact to the layer or to the wafer, is based on selection of optical wavelength or wavelengths and the measurements of transmittance through the sample at such wavelength(s). The relationship between the temperature variations of the absorption coefficient, whether determined by band-to-band absorption or a totally different mechanism, and the measured transmittance, provide an indication of the sample temperature, without regard to the ambient temperature. The method prescribes how to select the wavelength(s) based both on the intrinsic properties of the material and on the practical considerations of the measurement situation.

US Patent:

49489372, Aug 14, 1990

Filed:

Dec 23, 1988

Appl. No.:

7/289353

Inventors:

Richard E. Blank - Roanoke VA
James W. Harris - Roanoke VA
Avraham Amith - Roanoke VA

Assignee:

ITT Corporation - New York NY

International Classification:

B23K 2600

US Classification:

2191216

Abstract:

An apparatus for heat cleaning a semiconductor material by producing a uniform thermal distribution in the area of the material being cleaned. In one arrangement a heater block is positioned between a lamp nad a photocathode. The semiconductor material layer of the photocathode is directed away from the lamp. The heater block absorbs the entire range of wavelengths radiated by the lamp but reradiates only long wavelengths to the photocathode. In another arrangement, a laser has its beam directed to a focusing and scanning system. The resultant beam is directed to a photocathode which is positioned with its semiconductive layer directed toward the beam.

US Patent:

51674521, Dec 1, 1992

Filed:

Aug 28, 1989

Appl. No.:

7/399729

Inventors:

Avraham Amith - Roanoke VA
Charles Naselli - Roanoke VA
C. Scott Nevin - Albion IN

Assignee:

ITT Corporation - New York NY

International Classification:

G01J 500
G01K 1100

US Classification:

374121

Abstract:

A method of accurately determining the temperature of a thin layer of bandgap material without requiring contact to the layer involves the use of optical radiation through the layer and the detection of optical absorption by the layer. The relationship between the temperature varying bandgap energy and the resulting optical absorption characteristics provides an indication of temperature independent of ambient temperature. Apparatus for performing high quality temperature detection and control is also provided.