Ayako Ikeda

US Patent:

20060157717, Jul 20, 2006

Filed:

Dec 20, 2005

Appl. No.:

11/311638

Inventors:

Youichi Nagai - Itami-shi, JP
Hiroyuki Kitabayashi - Itami-shi, JP
Hirohisa Saito - Itami-shi, JP
Ayako Ikeda - Pasadena CA, US

International Classification:

H01L 33/00

US Classification:

257081000

Abstract:

A light emitting device having a simple structure that can be easily manufactured, attaining high light emitting efficiency stably for a long time is obtained, which light emitting device includes: a GaN substrate as a nitride semiconductor substrate and, on a first main surface of the nitride semiconductor substrate, an n-type AlGaN layer, a p-type AlGaN layer positioned further than the n-type AlGaN layer viewed from the nitride semiconductor substrate, and a quantum well positioned between the n-type AlGaN layer and the p-type AlGaN layer. In the light emitting device, specific resistance of the nitride semiconductor substrate is at most 0.5 Ωcm, the side of p-type AlGaN layer is mounted face-down, and the light is emitted from the second main surface that is opposite to the first main surface of the nitride semiconductor substrate. The second main surface of nitride semiconductor substrate has trenches formed therein.