Barry R Levine

US Patent:

39354725, Jan 27, 1976

Filed:

Mar 14, 1975

Appl. No.:

5/558424

Inventors:

Clyde G. Bethea - East Orange NJ
Barry Franklin Levine - Westfield NJ
Ralph Andre Logan - Morristown NJ

Assignee:

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

International Classification:

G02B 514
G02F 137

US Classification:

307 883

Abstract:

An optically nonlinear liquid thin film in a thin film optical waveguide is utilized in order to produce optical parametric interactions such as second harmonic generation. Optimization (tuning) of parametric output by "phase matching" is achieved by means of an electric field which is set up in the liquid film, the field having a spatial periodicity along the propagation direction of the optical waves in the thin film. Alternative or further optimization of parametric output is achieved by varying the thickness of the liquid film in situ.

US Patent:

61876534, Feb 13, 2001

Filed:

Dec 17, 1999

Appl. No.:

9/465884

Inventors:

Sanghee Park Hui - New Providence NJ
Barry Franklin Levine - Livingston NJ
Christopher James Pinzone - Basking Ridge NJ
Gordon Albert Thomas - Princeton NJ

Assignee:

Lucent Technologies, Inc. - Murray Hill NJ

International Classification:

H01L 2130
H01L 2146
H01L 2144
H01L 2148

US Classification:

438455

Abstract:

A process for device fabrication is disclosed in which two substrates having different crystal lattices are bound together. In the process the substrate surfaces are placed in physical contact with each other. A flexible membrane is placed in physical contact with a surface of one of the substrates. Pneumatic force is applied to the flexible membrane. The duration of the contact and the pressure of the contact are selected to facilitate a bond between the two substrate surfaces that results from attractive Van der Waals' forces between the two surfaces. The bulk of one of the substrates is then typically removed. Thereafter, the bonded surfaces are heated to a high temperature to effect a permanent bond.

US Patent:

45996326, Jul 8, 1986

Filed:

Aug 30, 1982

Appl. No.:

6/412786

Inventors:

Clyde G. Bethea - Plainfield NJ
Federico Capasso - Westfield NJ
Albert L. Hutchinson - Piscataway NJ
Barry F. Levine - Livingston NJ
Won-Tien Tsang - New Providence NJ

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01L 2714

US Classification:

357 30

Abstract:

A photodetector having a graded bandgap region is an ultrahigh speed photodetector when operated at zero bias.

US Patent:

50236857, Jun 11, 1991

Filed:

Jun 6, 1989

Appl. No.:

7/361879

Inventors:

Clyde G. Bethea - Plainfield NJ
Ghulam Hasnain - Edison NJ
Barry F. Levine - Livingston NJ
Roger J. Malik - Summit NJ

International Classification:

H01L 2714

US Classification:

357 30

Abstract:

Electromagnetic radiation such as, in particular, infrared radiation is detected opto-electronically by means of a superlattice structure forming quantum wells having a single bound state; in the interest of minimizing dark-current, relatively wide barriers are used between quantum wells. Resulting highly sensitive, high-speed detectors can be used in optical communications, for terrain mapping, and for infrared viewing. Furthermore, upon application of a variable electrical potential across the superlattice structure, radiation traversing such structure can be modulated.

US Patent:

62944142, Sep 25, 2001

Filed:

May 4, 2000

Appl. No.:

9/564769

Inventors:

Barry Franklin Levine - Livingston NJ

Assignee:

Agere Systems Guardian Corp. - Orlando FL

International Classification:

H01L 21338

US Classification:

438183

Abstract:

This invention is predicated upon applicants'discovery that the quality of high performance heterointerface devices having diffused junction depends significantly on the rate of cooling after diffusing the junctions. Use of the method to fabricate a high performance photodiode is described.

US Patent:

41996984, Apr 22, 1980

Filed:

Dec 8, 1978

Appl. No.:

5/967688

Inventors:

Clyde G. Bethea - East Orange NJ
Barry F. Levine - Livingston NJ
Robert T. Lynch - Berkeley Heights NJ
Carl D. Thurmond - Morristown NJ

Assignee:

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

International Classification:

H03F 700

US Classification:

307425

Abstract:

Nonlinear devices using 2-methyl-4-nitroaniline are described. Devices using 2-methyl-4-nitroaniline as the active element include second harmonic generators, optical mixers and parametric oscillators which can be operated under phasematched conditions.

US Patent:

49424424, Jul 17, 1990

Filed:

Apr 27, 1989

Appl. No.:

7/346384

Inventors:

Clyde G. Bethea - Plainfield NJ
Daniel Brasen - Lake Hiawatha NJ
Barry F. Levine - Livingston NJ
Ronald H. Willens - Warren NJ

Assignee:

American Telephone and Telegraph Company, AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01L 4902

US Classification:

357 29

Abstract:

Radiation-induced effects discovered in layered structures of conductor and semiconductor materials are utilized in radiation-sensitive devices such as, e. g. , highly linear as well as highly nonlinear position sensors. Such devices includes a structure of alternating layers of conductor and semiconductor materials, and electrical contacts are provided between which a radiation-induced voltage appears. Among suitable layer materials are silicon and titanium, and resulting devices are sensitive to electromagnetic as well as to particle radiation.

US Patent:

47541318, Jun 28, 1988

Filed:

Dec 31, 1985

Appl. No.:

6/814962

Inventors:

Clyde G. Bethea - Plainfield NJ
Barry F. Levine - Livingston NJ

Assignee:

American Telephone and Telegraph Company, AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01J 4014

US Classification:

250211J

Abstract:

An avalanche photodetector having separate absorption and multiplication regions comprising Group III-V compound semiconductors is useful as a detector of small numbers of photons when it is operated with an above threshold bias voltage at ambient temperature.