Baxter F Moody

US Patent:

20120146023, Jun 14, 2012

Filed:

Dec 13, 2011

Appl. No.:

13/324261

Inventors:

Spalding Craft - Raleigh NC, US
Baxter Moody - Raleigh NC, US
Rafael Dalmau - Raleigh NC, US
Raoul Schlesser - Raleigh NC, US

International Classification:

H01L 29/04
H01L 21/20

US Classification:

257 51, 257 49, 438488, 438478, 257E29003, 257E2109

Abstract:

Disclosed are methods and materials useful in the preparation of semiconductor devices. In particular embodiments, disclosed are methods for engineering polycrystalline aluminum nitride substrates that are thermally matched to further materials that can be combined therewith. For example, the polycrystalline aluminum nitride substrates can be engineered to have a coefficient of thermal expansion (CTE) that is closely matched to the CTE of a semiconductor material and/or to a material that can be used as a growth substrate for a semiconductor material. The invention also encompasses devices incorporating such thermally engineered substrates and semiconductor materials grown using such thermally engineered substrates. The thermally engineered substrates are advantageous for overcoming problems caused by damage arising from CTE mismatch between component layers in semiconductor preparation methods and materials.

US Patent:

20120021175, Jan 26, 2012

Filed:

Jul 19, 2011

Appl. No.:

13/185544

Inventors:

Baxter Moody - Raleigh NC, US
Rafael Dalmau - Raleigh NC, US
David Henshall - Raleigh NC, US
Raoul Schlesser - Raleigh NC, US

International Classification:

B32B 3/00
C04B 35/64
C01B 21/072

US Classification:

428141, 423412, 264676, 428220

Abstract:

Methods of preparing polycrystalline aluminum nitride materials that have high density, high purity, and favorable surface morphology are disclosed. The methods generally comprises pressing aluminum nitride powders to form a slug, sintering the slug to form a sintered, polycrystalline aluminum nitride boule, and optionally shaping the boule and/or polishing at least a portion of the boule to provide a finished substrate. The sintered, polycrystalline aluminum nitride materials beneficially are prepared without the use of any sintering aid or binder, and the formed materials exhibit excellent density, AlN purity, and surface morphology.

US Patent:

20160181474, Jun 23, 2016

Filed:

Feb 26, 2016

Appl. No.:

15/054889

Inventors:

- Morrisville NC, US
Baxter Moody - Raleigh NC, US
Seiji Mita - Cary NC, US

International Classification:

H01L 33/32
H01L 33/50
H01L 33/06
H01L 33/16

Abstract:

The invention provides an optoelectronic device adapted to emit ultraviolet light, including an aluminum nitride single crystalline substrate, wherein the dislocation density of the substrate is less than about 10cmand the Full Width Half Maximum (FWHM) of the double axis rocking curve for the (002) and (102) crystallographic planes is less than about 200 arcsec; and an ultraviolet light-emitting diode structure overlying the aluminum nitride single crystalline substrate, the diode structure including a first electrode electrically connected to an n-type semiconductor layer and a second electrode electrically connected to a p-type semiconductor layer. In certain embodiments, the optoelectronic devices of the invention exhibit a reverse leakage current less than about 10A/cmat −10 V and/or an L80 of at least about 5000 hours at an injection current density of 28 A/cm.

US Patent:

20150247260, Sep 3, 2015

Filed:

Aug 23, 2012

Appl. No.:

14/422888

Inventors:

Akinori Koukitu - Tokyo, JP
Yoshinao Kumagai - Tokyo, JP
Toru Nagashima - Yamaguchi, JP
Toru Kinoshita - Yamaguchi, JP
Yuki Kubota - Yamaguchi, JP
Rafael F. Dalmau - Raleigh NC, US
Jinqiao Xie - Allen TX, US
Baxter F. Moody - Raleigh NC, US
RAOUL Schlesser - Raleigh NC, US
Zlatko Sitar - Apex NC, US

International Classification:

C30B 25/20
C30B 29/40
H01L 33/00
H01L 33/32
H01L 33/18
C30B 25/14
C01B 21/072

Abstract:

The invention provides highly transparent single crystalline AlN layers as device substrates for light emitting diodes in order to improve the output and operational degradation of light emitting devices. The highly transparent single crystalline AlN layers have a refractive index in the a-axis direction in the range of 2.250 to 2.400 and an absorption coefficient less than or equal to 15 cm-1 at a wavelength of 265 nm. The invention also provides a method for growing highly transparent single crystalline A1N layers, the method including the steps of maintaining the amount of Al contained in wall deposits formed in a flow channel of a reactor at a level lower than or equal to 30% of the total amount of aluminum fed into the reactor, and maintaining the wall temperature in the flow channel at less than or equal to 1200 C.

US Patent:

20140209923, Jul 31, 2014

Filed:

Jan 28, 2014

Appl. No.:

14/165943

Inventors:

- Morrisville NC, US
Baxter Moody - Raleigh NC, US
Seiji Mita - Cary NC, US

Assignee:

Hexatech, Inc. - Morrisville NC

International Classification:

H01L 33/02
H01L 33/32

US Classification:

257 76

Abstract:

The invention provides an optoelectronic device adapted to emit ultraviolet light, including an aluminum nitride single crystalline substrate, wherein the dislocation density of the substrate is less than about 10cmand the Full Width Half Maximum (FWHM) of the double axis rocking curve for the (002) and (102) crystallographic planes is less than about 200 arcsec; and an ultraviolet light-emitting diode structure overlying the aluminum nitride single crystalline substrate, the diode structure including a first electrode electrically connected to an n-type semiconductor layer and a second electrode electrically connected to a p-type semiconductor layer. In certain embodiments, the optoelectronic devices of the invention exhibit a reverse leakage current less than about 10A/cmat −10V and/or an L80 of at least about 5000 hours at an injection current density of 28 A/cm.