Benjamin Luke Fletcher

US Patent:

8431486, Apr 30, 2013

Filed:

Aug 10, 2010

Appl. No.:

12/853537

Inventors:

Cyril Cabral, Jr. - Mahopac NY, US
Sebastian U. Engelmann - White Plains NY, US
Benjamin Fletcher - New York NY, US
Eric A. Joseph - White Plains NY, US
Satyanarayana V. Nitta - Poughquag NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/44

US Classification:

438673, 438622, 257E21582

Abstract:

The present disclosure provides a method of forming an interconnect to an electrical device. In one embodiment, the method of forming an interconnect includes providing a device layer on a substrate, wherein the device layer comprises at least one electrical device, an intralevel dielectric over the at least one electrical device, and a contact that is in electrical communication with the at least one electrical device. An interconnect metal layer is formed on the device layer, and a tantalum-containing etch mask is formed on a portion of the interconnect metal layer. The interconnect metal layer is etched to provide a trapezoid shaped interconnect in communication with the at least one electrical device. The trapezoid shaped interconnect has a first surface that is in contact with the device layer with a greater width than a second surface of the trapezoid shaped interconnect that is in contact with the tantalum-containing etch mask.

US Patent:

8633117, Jan 21, 2014

Filed:

Nov 7, 2012

Appl. No.:

13/671186

Inventors:

Benjamin L. Fletcher - Elmsford NY, US
Nicholas C. M. Fuller - North Hills NY, US
Eric A. Joseph - White Plains NY, US
Hiroyuki Miyazoe - White Plains NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/302
H01L 21/461

US Classification:

438710, 438717, 438720, 438736, 438738

Abstract:

In one embodiment, fabricating conductive lines in an integrated circuit includes providing a layer of conductive metal in a multi-layer structure fabricated upon a wafer and sputter etching the conductive metal using methanol plasma, wherein a portion of the conductive metal that remains after the sputter etching forms the conductive lines. In another embodiment, fabricating conductive lines in an integrated circuit includes providing a layer of conductive metal in a multi-layer structure fabricated upon a wafer, wherein the layer of conductive metal is an intermediate layer in the multi-layer structure, etching the multi-layer structure to expose the conductive metal, sputter etching conductive metal using methanol plasma, wherein a portion of the conductive metal that remains after the sputter etching forms the conductive lines, forming a liner that surrounds the conductive lines, subsequent to the sputter etching, and depositing a dielectric layer on the multi-layer structure.

US Patent:

8634810, Jan 21, 2014

Filed:

Sep 29, 2011

Appl. No.:

13/248094

Inventors:

Eric J. Barkie - Morrisville NC, US
Benjamin L. Fletcher - Milwaukee WI, US
Carlos A. Fonseca - LaGrangeville NY, US
Leslie S. Liu - White Plains NY, US
Colm V. Malone - Middletown NY, US
Min Wei - New City NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H04M 1/725

US Classification:

4554122, 4554121, 4554141, 455410, 455411, 455466

Abstract:

A method for pushing secure notifications includes a push service platform receiving a push notification message request from an entity registered with the push service platform, processing the push notification message request to generate a secure push notification message, and sending the secure push notification message to a target mobile computing device through a native third-party push service associated with the target mobile computing device. The secure push notification message includes a message ID (identifier) that corresponds to message content associated with the push notification message request. The method further includes the push service platform receiving a pull message request from the target mobile computing device, the pull message request requesting the message content associated with the push notification message corresponding to the message ID, and sending the requested message content associated with the push notification message to the mobile computing device.

US Patent:

20120038048, Feb 16, 2012

Filed:

Aug 11, 2010

Appl. No.:

12/854506

Inventors:

Cyril Cabral, JR. - Mahopac NY, US
Benjamin Fletcher - New York NY, US
Christian Lavoie - Pleasantville NY, US
Zhen Zhang - Ossining NY, US

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

International Classification:

H01L 23/532
H01L 21/3205

US Classification:

257741, 438664, 257E21296, 257E23157

Abstract:

A method of forming nickel monosilicide is provided that includes providing a silicon-containing surface, and ion implanting carbon into the silicon-containing surface.A nickel-containing layer is formed on the silicon-containing surface. Alloying the nickel-containing surface and the silicon-containing surface layer to provide a nickel monosilicide. The present disclosure also provides a non-agglomerated Ni monosilicide contact that includes a carbon interstitial dopant present in a concentration ranging from 1×10atoms/cmto 1×10atoms/cm.

US Patent:

20120202345, Aug 9, 2012

Filed:

Feb 7, 2011

Appl. No.:

13/022474

Inventors:

Benjamin Luke Fletcher - Elmsford NY, US
Christian Lavoie - Pleasantville NY, US
Siegfried Lutz Maurer - Stormville NY, US
Zhen Zhang - Ossining NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/3205
B82Y 40/00

US Classification:

438664, 977765, 977890, 977755, 257E21296

Abstract:

Techniques for silicide, germanide or germanosilicide formation in extremely small structures are provided. In one aspect, a method for forming a silicide, germanide or germanosilicide in a three-dimensional silicon, germanium or silicon germanium structure having extremely small dimensions is provided. The method includes the following steps. At least one element is implanted into the structure. At least one metal is deposited onto the structure. The structure is annealed to intersperse the metal within the silicon, germanium or silicon germanium to form the silicide, germanide or germanosilicide wherein the implanted element serves to prevent morphological degradation of the silicide, germanide or germanosilicide. The implanted element can include at least one of carbon, fluorine and silicon.

US Patent:

20120261788, Oct 18, 2012

Filed:

Apr 15, 2011

Appl. No.:

13/088083

Inventors:

Qinghuang Lin - Yorktown Heights NY, US
Benjamin L. Fletcher - Elmsford NY, US
Cyril Cabral, JR. - Mahopac NY, US

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

International Classification:

H01L 29/06
H01L 21/28
H01L 21/31

US Classification:

257506, 438703, 438672, 257E2124, 257E2902, 257E21158

Abstract:

Devices and methods for forming a self-aligned airgap interconnect structure includes etching a conductive layer to a substrate to form conductive structures with patterned gaps and filling the gaps with a sacrificial material. The sacrificial material is planarized to expose a top surface of the conductive layer. A permeable cap layer is deposited over the conductive structure and the sacrificial material. Self-aligned airgaps are formed by removing the sacrificial material through the permeable layer.

US Patent:

20120278878, Nov 1, 2012

Filed:

Apr 27, 2011

Appl. No.:

13/095437

Inventors:

Eric J. Barkie - Morrisville NC, US
Benjamin L. Fletcher - Elmsford NY, US
Andrew P. Wyskida - Fishkill NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G06F 21/00

US Classification:

726 15

Abstract:

Systems and methods are provided for establishing secure VPN communications using processes executing in unprivileged user space. For example, systems and methods for establishing secure VPN communications implement user mode VPN clients and user mode network protocol stacks (e.g., TCP/IP stacks) that operate in user space without root access to an operating system of a computing device.

US Patent:

20130133043, May 23, 2013

Filed:

Jan 16, 2013

Appl. No.:

13/743265

Inventors:

International Business Machines Corporation - Armonk NY, US
Benjamin L. Fletcher - Elmsford NY, US
Marco Pistoia - Amawalk NY, US
John J. Ponzo - Yorktown Heights NY, US
Andrew P. Wyskida - Fishkill NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H04L 29/06

US Classification:

726 4

Abstract:

Systems and methods are provided for controlling access to a network. An access request is received from a client application running on a computing device for accessing a remote network. The access request is received over a secure virtual private network connection (VPN) connection established by a user-mode VPN client running in non-privileged user space of the computing device. The access request includes contextual information for use in authenticating a user to access a remote network, wherein the contextual information includes contextual information about the client application requesting access to the remote network. An authentication process is performed using the contextual information to authenticate the user, and a secure VPN connection is established between the client application and the remote network, if the user is authenticated.