Billy B Hutcheson

US Patent:

7037799, May 2, 2006

Filed:

Oct 24, 2002

Appl. No.:

10/280931

Inventors:

Billy Bradford Hutcheson - McKinney TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 21/331

US Classification:

438350, 438312, 438314, 438320, 438342

Abstract:

Devices and methods are disclosed related to a bipolar transistor device and methods of fabrication. A top region is formed at a surface of and within a base region. The top region is formed by implanting a dopant of an opposite conductivity to that of the base region. However, the top region remains of the same conductivity type as the base region (e. g. , n-type or p-type). This implanting, also referred to as counterdoping, increases resistivity of the top region and thus improves an emitter-base breakdown voltage. Additionally, this implanting does not have a substantial detrimental affect on a beta value, also referred to as an amplification property, or a collector emitter breakdown voltage, also referred to as BVceo, for the transistor. The beta value and the collector emitter breakdown voltage are mainly a function of a bottom portion of the base region.

US Patent:

58982680, Apr 27, 1999

Filed:

Mar 7, 1997

Appl. No.:

8/813130

Inventors:

Wylie K. Moreshead - Wylie TX
Billy B. Hutcheson - McKinney TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01J 4006
H05F 300
H05F 306

US Classification:

313542

Abstract:

Apparatus (10, 30, 60) and a method for generating low energy electrons (26, 46) for neutralizing charges (16, 36, 66) accumulated on a wafer (14, 34, 64) is provided. The apparatus includes a photocathode (24, 44, 67) located within a predetermined distance from the wafer (14, 34, 64), and a light source (20, 40, 70, 76, 86) operable to emit a light (22, 42, 72, 78, 88) striking the photocathode (24, 44, 67), the photocathode (24, 44, 67) generating a cloud of low energy electrons (26, 46) with a narrow energy distribution near the wafer (14, 34, 64).