Bing Wu Yu

US Patent:

20230062556, Mar 2, 2023

Filed:

Aug 26, 2021

Appl. No.:

17/412887

Inventors:

- Itasca IL, US
Ken Deng - Schaumburg IL, US
Faisal Zaman - Naperville IL, US
Bing Yu - Elk Grove Village IL, US
Peter V. Loeppert - Durand IL, US

International Classification:

B81B 7/00

Abstract:

A microelectromechanical systems (MEMS) die includes a first diaphragm and a second diaphragm, wherein the first diaphragm and the second diaphragm bound a sealed chamber. A stationary electrode is disposed within the sealed chamber between the first diaphragm and the second diaphragm. A tunnel passes through the first diaphragm and the second diaphragm without passing through the stationary electrode, wherein the tunnel is sealed off from the chamber. The MEMS die further includes a substrate having an opening formed therethrough, wherein the tunnel provides fluid communication from the opening, through the second diaphragm, and through the first diaphragm.

US Patent:

20210136475, May 6, 2021

Filed:

Oct 27, 2020

Appl. No.:

17/081628

Inventors:

- Itasca IL, US
Sung B. Lee - Itasca IL, US
Yunfei Ma - Itasca IL, US
Bing Yu - Itasca IL, US

International Classification:

H04R 1/08

Abstract:

An acoustic transducer comprises a transducer substrate having an aperture defined therethrough. At least one diaphragm is disposed on the transducer substrate over the aperture. A back plate is disposed on the transducer substrate and axially spaced apart from the at least one diaphragm. A perimetral support structure is disposed circumferentially between the at least one diaphragm and the back plate at a radially outer perimeter of the back plate. A plurality of perimetral release holes are defined circumferentially through at least one of the at least one diaphragm or the back plate proximate to and radially inwards of the perimetral support structure, at least a portion of the plurality of perimetral release holes defining a non-circular shape.

US Patent:

20210070610, Mar 11, 2021

Filed:

Nov 16, 2020

Appl. No.:

17/099442

Inventors:

- Itasca IL, US
Bing YU - Itasca IL, US
Michael KUNTZMAN - Itasca IL, US
Yunfei MA - Itasca IL, US
Michael PEDERSEN - Itasca IL, US

Assignee:

KNOWLES ELECTRONICS, LLC - Itasca IL

International Classification:

B81C 1/00
B81B 3/00
H04R 31/00
G01L 9/00

Abstract:

A method of forming an acoustic transducer comprises providing a substrate and depositing a first structural layer on the substrate. The first structural layer is selectively etched to form at least one of an enclosed trench or an enclosed pillar thereon. A second structural layer is deposited on the first structural layer and includes a depression or a bump corresponding to the enclosed trench or pillar, respectively. At least the second structural layer is heated to a temperature above a glass transition temperature of the second structural layer causing the second structural layer to reflow. A diaphragm layer is deposited on the second structural layer such that the diaphragm layer includes at least one of a downward facing corrugation corresponding to the depression or an upward facing corrugation corresponding to the bump. The diaphragm layer is released, thereby forming a diaphragm suspended over the substrate.

US Patent:

20200109048, Apr 9, 2020

Filed:

Oct 4, 2019

Appl. No.:

16/593498

Inventors:

- Itasca IL, US
Bing Yu - Itasca IL, US
Michael Kuntzman - Itasca IL, US
Yunfei Ma - Itasca IL, US
Michael Pedersen - Itasca IL, US

Assignee:

KNOWLES ELECTRONICS, LLC - Itasca IL

International Classification:

B81C 1/00
B81B 3/00
H04R 31/00
G01L 9/00

Abstract:

A method of forming an acoustic transducer comprises providing a substrate and depositing a first structural layer on the substrate. The first structural layer is selectively etched to form at least one of an enclosed trench or an enclosed pillar thereon. A second structural layer is deposited on the first structural layer and includes a depression or a bump corresponding to the enclosed trench or pillar, respectively. At least the second structural layer is heated to a temperature above a glass transition temperature of the second structural layer causing the second structural layer to reflow. A diaphragm layer is deposited on the second structural layer such that the diaphragm layer includes at least one of a downward facing corrugation corresponding to the depression or an upward facing corrugation corresponding to the bump. The diaphragm layer is released, thereby forming a diaphragm suspended over the substrate.

US Patent:

20200112799, Apr 9, 2020

Filed:

Oct 4, 2019

Appl. No.:

16/593263

Inventors:

- Itasca IL, US
Michael Pedersen - Itasca IL, US
Sung Bok Lee - Itasca IL, US
Bing Yu - Itasca IL, US
Peter Loeppert - Itasca IL, US

Assignee:

KNOWLES ELECTRONICS, LLC - Itasca IL

International Classification:

H04R 19/04
H04R 7/18
H04R 7/14

Abstract:

An acoustic transducer for generating electrical signals in response to acoustic signals, comprises a first diaphragm having a first corrugation formed therein. A second diaphragm has a second corrugation formed therein, and is spaced apart from the first diaphragm such that a cavity having a pressure lower than atmospheric pressure is formed therebetween. A back plate is disposed between the first diaphragm and the second diaphragm. One or more posts extend from at least one of the first diaphragm or the second diaphragm towards the other through the back plate. The one or more posts prevent each of the first diaphragm and the second diaphragm from contacting the back plate due to movement of the first diaphragm and/or the second diaphragm towards the back plate. Each of the first corrugation and the second corrugation protrude outwardly from the first diaphragm and the second diaphragm, respectively, away from the back plate.

US Patent:

20200112800, Apr 9, 2020

Filed:

Oct 4, 2019

Appl. No.:

16/593381

Inventors:

- Itasca IL, US
Bing Yu - Itasca IL, US
Michael Kuntzman - Itasca IL, US
Yunfei Ma - Itasca IL, US
Wade Conklin - Itasca IL, US
Peter Loeppert - Itasca IL, US

Assignee:

KNOWLES ELECTRONICS, LLC - Itasca IL

International Classification:

H04R 19/04
H04R 7/06
H04R 7/18

Abstract:

A microphone device includes a base and a microelectromechanical system (MEMS) transducer and an integrated circuit (IC) disposed on the base. The microphone device also includes a cover mounted on the base and covering the MEMS transducer and the IC. The MEMS transducer includes a diaphragm attached to a surface of the substrate and a back plate mounted on the substrate and in a spaced apart relationship with the diaphragm. The diaphragm is attached to the surface of the substrate along at least a portion of a periphery of the diaphragm. The diaphragm can include a silicon nitride insulating layer, and a conductive layer, that faces a conductive layer of the back plate. The MEMS transducer can include a peripheral support structure that is disposed between at least a portion of the diaphragm and the substrate. The diaphragm can include one or more pressure equalizing apertures.