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Bing Jian Zhang

age ~76

from Las Vegas, NV

Also known as:
  • Bingjian Zhang

Bing Zhang Phones & Addresses

  • Las Vegas, NV
  • Logandale, NV
  • San Francisco, CA
Name / Title
Company / Classification
Phones & Addresses
Bing (Bella) Zhang
Manager
Constant Home Comfort
R&C Energysaving Inc
Air Conditioning & Heating Contractors - Residential. Insulation Contractor - Spray Foam. Contractor - Roofing Spray Foam Insulation. Furnaces - Heating
535 3771 Jacombs Rd, Richmond, BC V6V 2L9
(604)4201178, (604)4201173
Bing Zhang
Manager
Constant Home Comfort
Heating Contractors · Air Conditioning & Heating Contractors - Residential · Insulation Contractor - Spray Foam · Contractor - Roofing Spray Foam Insulation · Furnaces - Heating
(905)9408828, (905)9408767, (604)4201178, (604)4201173
Bing Zhang
President
America California Union Zhi Heng Biological Technology Development Ltd
Bing Zhang
Mpartner
Super Auto Repair Llp
5585 Spg Mtn Rd, Las Vegas, NV 89146

License Records

Bing Zhang

License #:
07247 - Active
Category:
Accountants
Issued Date:
May 5, 2014
Expiration Date:
Jun 30, 2019
Type:
Certified Public Accountant

Bing Zhang

License #:
07247 - Active
Category:
Accountants
Issued Date:
May 5, 2014
Expiration Date:
Jun 30, 2019
Type:
Certified Public Accountant

Us Patents

  • Vanin 1 As A Peripheral Blood Oxidative Stress Sensor

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  • US Patent:
    20120142550, Jun 7, 2012
  • Filed:
    Dec 5, 2011
  • Appl. No.:
    13/311367
  • Inventors:
    James L. Zehnder - Menlo Park CA, US
    Bing Zhang - Fremont CA, US
  • International Classification:
    C40B 30/04
    C40B 30/00
    G01N 33/566
    C12Q 1/68
  • US Classification:
    506 9, 435 611, 506 7, 435 612, 435 71, 435 792
  • Abstract:
    Aspects of the subject invention are drawn to methods, compositions, systems and kits for the assessment of oxidative stress in an individual from a blood sample. In certain embodiments, the expression level of VNN1 in blood cells from a subject (or patient) is assessed and used to determine the subject's oxidative stress state, where an increased/high expression level of VNN1 indicates that the subject is in a state of oxidative stress. Expression of VNN1, and optionally other genes, may be done by assessing nucleic acid and/or protein levels in the blood cells obtained from the subject.
  • Method Of Manufacturing Cocrta/Cocrtapt Bi-Layer Magnetic Thin Films

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  • US Patent:
    57728577, Jun 30, 1998
  • Filed:
    Feb 28, 1996
  • Appl. No.:
    8/608142
  • Inventors:
    Bing Zhang - Fremont CA
  • Assignee:
    Seagate Technology, Inc. - Scotts Valley CA
  • International Classification:
    C23C 1434
  • US Classification:
    2041922
  • Abstract:
    Double layer, or bi-layer, magnetic films are deposited over a substrate with an underlayer. The bi-layer film is a film of two different magnetic layers which have different chemical composition, deposited with no spacer layer between the two layers. The lower magnetic layer should be of a low noise magnetic material, while the upper magnetic layer should be a high coercivity magnetic material. The bi-layer film exhibits a single response to magnetic recording and a joint coercivity different from the coercivity of either layer by itself. A preferred double layer media uses a CoCrTa layer deposited under a CoCrTaPt layer, with the CoCrTa layer comprising 30 to 70% of the total film thickness. The double layer film produces magnetic media with higher coercivity and lower media noise as compared to single layered films of either of the materials of the magnetic layers.
  • Cocrta/Cocrptta Bi-Layer Magnetic Thin Films

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  • US Patent:
    59520973, Sep 14, 1999
  • Filed:
    Nov 4, 1997
  • Appl. No.:
    8/964259
  • Inventors:
    Bing Zhang - Fremont CA
  • Assignee:
    Seagate Technology, Inc. - Scotts Valley CA
  • International Classification:
    G11B 566
  • US Classification:
    428332
  • Abstract:
    Double layer, or bi-layer, magnetic films are deposited over a substrate with an underlayer. The bi-layer film is a film of two different magnetic layers which have different chemical composition, deposited with no spacer layer between the two layers. The lower magnetic layer should be of a low noise magnetic material, while the upper magnetic layer should be a high coercivity magnetic material. The bi-layer film exhibits a single response to magnetic recording and a joint coercivity different from the coercivity of either layer by itself. A preferred double layer media uses a CoCrTa layer deposited under a CoCrTaPt layer, with the CoCrTa layer comprising 30 to 70% of the total film thickness. The double layer film produces magnetic media with higher coercivity and lower media noise as compared to single layered films of either of the materials of the magnetic layers.
  • Magnetic Recording Medium With Substantially Uniform Sub-Micron-Scale Morphology

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  • US Patent:
    60226099, Feb 8, 2000
  • Filed:
    Oct 2, 1996
  • Appl. No.:
    8/726296
  • Inventors:
    Chuan Gao - Fremont CA
    Roger Klas Malmhall - Mountain View CA
    Bing Zhang - Fremont CA
    Kevin Grannen - Pacific CA
    Be Van Ho - San Jose CA
  • Assignee:
    Seagate Technology, Inc. - Scotts Valley CA
  • International Classification:
    G11B 566
  • US Classification:
    428141
  • Abstract:
    The signal-to-noise ratio of a magnetic recording medium having a thin magnetic layer is improved by adjusting the deposition conditions of the underlayer so that the magnetic layer is pseudo-epitaxially grown with a substantially uniform sub-micron-scale morphology. Uniform sub-micron-scale morphology can be attained by strategic selection of the underlayer and magnetic layer materials, and by controlling the underlayer deposition conditions so that the magnetic layer is epitaxially grown by a growth mechanism which is predominantly layer by layer. In an embodiment of the present invention, an underlayer comprising an alloy of chromium with vanadium, titanium or manganese, or an underlayer comprising a nickel-aluminum alloy, is sputter deposited at a pressure less than about 10 mTorr, substrate temperature greater than about 300. degree. C. and substrate bias greater than about 300 V, and a cobalt magnetic layer is epitaxially grown thereon, predominantly layer by layer.
  • Seeded Underlayer In Magnetic Thin Films

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  • US Patent:
    58585664, Jan 12, 1999
  • Filed:
    Jul 3, 1996
  • Appl. No.:
    8/678424
  • Inventors:
    Bing Zhang - Fremont CA
  • Assignee:
    Seagate Technology, Inc. - Scotts Valley CA
  • International Classification:
    G11B 564
    G11B 566
  • US Classification:
    428694TS
  • Abstract:
    A seed layer is deposited under an underlayer in magnetic thin film media. The seed layer material has a similar lattice parameter and a similar crystal structure to the underlayer material. The preferred structure involves a nickel-aluminum seed layer, under a chromium underlayer, under a cobalt-based magnetic layer. Use of the nickel-aluminum seed layer produces higher coercivity and lower media noise in the resultant magnetic thin film. The coercivity and media noise values for the resultant magnetic thin film are dependent upon deposition parameters, and recommended deposition parameters are given.
  • Seeded Underlayer In Magnetic Thin Films

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  • US Patent:
    6077603, Jun 20, 2000
  • Filed:
    Jul 23, 1997
  • Appl. No.:
    8/899295
  • Inventors:
    Bing Zhang - Fremont CA
  • Assignee:
    Seagate Technology, Inc. - Scotts Valley CA
  • International Classification:
    G11B 566
  • US Classification:
    428332
  • Abstract:
    A seed layer is deposited under an underlayer in magnetic thin film media. The seed layer material has a similar lattice parameter and a similar crystal structure to the underlayer material. The preferred structure involves a nickel-aluminum seed layer, under a chromium underlayer, under a cobalt-based magnetic layer. Use of the nickel-aluminum seed layer produces higher coercivity and lower media noise in the resultant magnetic thin film. The coercivity and media noise values for the resultant magnetic thin film are dependent upon deposition parameters, and recommended deposition parameters are given.
  • Enzymes And Metal-Organic Frameworks (Mofs)

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  • US Patent:
    20220370993, Nov 24, 2022
  • Filed:
    Jan 25, 2021
  • Appl. No.:
    17/759397
  • Inventors:
    - Ludwigshafen am Rhein, DE
    - Oakland CA, US
    Grit Baier - Ludwigshafen, DE
    Joshua C. Speros - Oakland CA, US
    Zhe Ji - Berkeley CA, US
    Bing Zhang - Berkeley CA, US
    Benjamin Breiten - Ludwigshafen, DE
  • International Classification:
    B01J 31/16
    B01J 31/00
    C12N 9/48
    C12N 9/20
    C11D 3/386
  • Abstract:
    Provided are compositions that include a metal-organic framework (MOF) including a framework defining an internal volume, an enzyme disposed within the internal volume, and a surfactant. Also provided are methods of making the compositions and their use.

Youtube

Huan Zhu Ge Ge I - Ep 2 part 5

English Title: Princess Pearl I Chinese Title: Huan Zhu Ge Ge I - I Vi...

  • Category:
    Film & Animation
  • Uploaded:
    27 Sep, 2007
  • Duration:
    8m 24s

Huan Zhu Ge Ge I - Ep 3 part 4

English Title: Princess Pearl I Chinese Title: Huan Zhu Ge Ge I - I Vi...

  • Category:
    Film & Animation
  • Uploaded:
    30 Sep, 2007
  • Duration:
    8m 48s

Huan Zhu Ge Ge I - Ep 1 part 5

English Title: Princess Pearl I Chinese Title: Huan Zhu Ge Ge I - I Vi...

  • Category:
    Film & Animation
  • Uploaded:
    25 Sep, 2007
  • Duration:
    8m 38s

Huan Zhu Ge Ge I - Ep 1 part 4

English Title: Princess Pearl I Chinese Title: Huan Zhu Ge Ge I - I Vi...

  • Category:
    Film & Animation
  • Uploaded:
    25 Sep, 2007
  • Duration:
    8m 39s

Huan Zhu Ge Ge I - Ep 1 part 3

English Title: Princess Pearl I Chinese Title: Huan Zhu Ge Ge I - I Vi...

  • Category:
    Film & Animation
  • Uploaded:
    25 Sep, 2007
  • Duration:
    8m 39s

Huan Zhu Ge Ge I - Ep 3 part 3

English Title: Princess Pearl I Chinese Title: Huan Zhu Ge Ge I - I Vi...

  • Category:
    Film & Animation
  • Uploaded:
    30 Sep, 2007
  • Duration:
    8m 49s

Plaxo

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Bing Zhang

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Bing Zhang Xeu

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Bing Zhang Tom

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Wei Bing Zhang

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Googleplus

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Bing Zhang

Work:
SHANGHAI SECURITIES CO., LTD.
Education:
Shanghai
Bing Zhang Photo 11

Bing Zhang

Education:
ECNU
About:
Ice, Ice here...
Bing Zhang Photo 12

Bing Zhang

Education:
University of Sydney - Commerce, Jinan University, Shandong
Bing Zhang Photo 13

Bing Zhang

Bing Zhang Photo 14

Bing Zhang

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Bing Zhang

Bing Zhang Photo 16

Bing Zhang

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Bing Zhang

Myspace

Bing Zhang Photo 18

BING ZHANG

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Locality:
, China
Gender:
Male
Birthday:
1945
Bing Zhang Photo 19

Bing Zhang

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Locality:
flagstaff, Arizona
Gender:
Male
Birthday:
1946

Classmates

Bing Zhang Photo 20

Bing Zhang

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Schools:
Xiangmin High School Shanghai China 1982-1986
Community:
Glenda Case

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