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Binglong L Zhang

age ~61

from Austin, TX

Also known as:
  • Binglong Tod Zhang
  • Bing Long Zhang
  • Bing L Zhang
  • Bing I Zhang
  • Barbara B Zhang
  • G Zhang
  • Bing Long
  • Long Zhang Bing
  • Long Bing
  • Zhang Binglong
Phone and address:
9209 Evening Primrose Path, Austin, TX 78750
(512)9189277

Binglong Zhang Phones & Addresses

  • 9209 Evening Primrose Path, Austin, TX 78750 • (512)9189277
  • Round Rock, TX
  • Cedar Park, TX
  • Leander, TX
  • Portland, OR

Resumes

Binglong Zhang Photo 1

Circuit Design Engineer

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Location:
Austin, TX
Industry:
Semiconductors
Work:
Intel Corporation since Jun 2008
Circuit Design Engineer

Texas Instruments Jun 2006 - Jun 2008
Circuit Design Engineer

Intel Corporation - Portland Oregon and Austin,TX Apr 1996 - Jun 2006
Custom Circuit Design Engineer

Intel Corporation - Portland, Oregon Area Nov 1993 - Apr 1996
Senior Device Engineer
Education:
Yale University 1988 - 1993
Ph.D in EE, Silicon-On-Insulator Device Physics
Peking University 1983 - 1987
Bachelor of Science (BS), Physics
Skills:
Sram
Static Timing Analysis
Soc
Processors
Circuit Design
Vlsi
Semiconductors
Simulation
Physical Design
Memory Design
Cmos
Ic
Low Power Design
Silicon
Computer Architecture
High Speed Design
Digital Design
Device Physics
Microprocessors
Sram Read/Write Margin Improvement Techniques
Simulations
Eda
Arm
Intel
Low Power Design
Binglong Zhang Photo 2

Binglong Zhang

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Location:
Austin, TX
Industry:
Accounting
Education:
The University of Texas at Austin 2010 - 2014

Us Patents

  • Method And Apparatus To Control The Signal Development Rate Of A Differential Bus

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  • US Patent:
    6601123, Jul 29, 2003
  • Filed:
    Dec 23, 1999
  • Appl. No.:
    09/471797
  • Inventors:
    Binglong Zhang - Portland OR
    Roland Pang - Phoenix AZ
  • Assignee:
    Intel Corporation - Santa Clara CA
  • International Classification:
    G06F 1700
  • US Classification:
    710305, 326 86
  • Abstract:
    A differential bus having a controllable differential signal development rate. A differential signal development rate control circuit is provided to control the development rate of a differential signal on a differential bus.
  • Method For Correcting Clock Duty Cycle Skew By Adjusting A Delayed Clock Signal According To Measured Differences In Time Intervals Between Phases Of Original Clock Signal

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  • US Patent:
    6687844, Feb 3, 2004
  • Filed:
    Sep 28, 2000
  • Appl. No.:
    09/671314
  • Inventors:
    Binglong Zhang - Austin TX
  • Assignee:
    Intel Corporation - Santa Clara CA
  • International Classification:
    G06F 104
  • US Classification:
    713503, 713500, 713501
  • Abstract:
    A device and method to detect and correct clock duty cycle skew detected in high performance microprocessor having a very high frequency clock. The device relies on a delay chain circuit to delay the clock signal and determine the presence of clock duty cycle skew. The device uses simple latches, flops and phase-detectors to compare and identify the nature of the clock duty cycle skew. Simple logic is then employed to measure and determine the amount and direction of de-skew to apply to the clock signal. After the de-skew operation, the clock duty cycle cycles used to control the execution of the microprocessor are of uniform time duration.
  • Polysilicon/Amorphous Silicon Composite Gate Electrode

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  • US Patent:
    6703672, Mar 9, 2004
  • Filed:
    Aug 25, 1997
  • Appl. No.:
    08/917796
  • Inventors:
    Lawrence N. Brigham - Beaverton OR
    Chia-Hong Jan - Portland OR
    Binglong Zhang - Portland OR
  • Assignee:
    Intel Corporation - Santa Clara CA
  • International Classification:
    H01L 2976
  • US Classification:
    257407, 257412, 257413
  • Abstract:
    A polysilicon/amorphous silicon composite layer for improved linewidth control in the patterning of gate electrodes, in the manufacture of metal oxide semiconductor (MOS) devices. The formation of a composite polysilicon/amorphous silicon gate in an integrated circuit gives the device the electrical performance and doping qualities of a polysilicon gate and also gives the device the smoothness of an amorphous silicon gate which improves line definition during gate patterning.
  • Method And Apparatus For Detecting And Correcting Clock Duty Cycle Skew In A Processor

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  • US Patent:
    7260736, Aug 21, 2007
  • Filed:
    Nov 19, 2003
  • Appl. No.:
    10/718282
  • Inventors:
    Binglong Zhang - Austin TX, US
  • Assignee:
    Intel Corporation - Santa Clara CA
  • International Classification:
    G06F 11/00
  • US Classification:
    713503, 713500
  • Abstract:
    A device and method to detect and correct for clock duty cycle skew in a high performance microprocessor having a very high frequency clock. The device includes a delay chain circuit to delay the clock signal and to determine the presence of clock duty cycle skew. The device uses simple latches, flops, and phase-detectors to compare and identify the nature of the clock duty cycle skew. Simple logic is employed to measure and determine the amount and direction of de-skew to apply to the clock signal. After the de-skew operation, the clock duty cycle cycles used to control the execution of the microprocessor are of a more uniform time duration.
  • Method For Forming A Polysilicon/Amorphous Silicon Composite Gate Electrode

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  • US Patent:
    60178191, Jan 25, 2000
  • Filed:
    Nov 14, 1997
  • Appl. No.:
    8/970715
  • Inventors:
    Lawrence N. Brigham - Beaverton OR
    Chia-Hong Jan - Portland OR
    Binglong Zhang - Portland OR
  • Assignee:
    Intel Corporation - Santa Clara CA
  • International Classification:
    H01L 213213
    H01L 21324
    H01L 21441
  • US Classification:
    438657
  • Abstract:
    A polysilicon/amorphous silicon composite layer for improved linewidth control in the patterning of gate electrodes, in the manufacture of metal oxide semiconductor (MOS) devices. The formation of a composite polysilicon/amorphous silicon gate in an integrated circuit gives the device the electrical performance and doping qualities of a polysilicon gate and also gives the device the smoothness of an amorphous silicon gate which improves line definition during gate patterning.
  • Implementing Write Ports In Register-File Array Cell

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  • US Patent:
    20200081713, Mar 12, 2020
  • Filed:
    Sep 6, 2018
  • Appl. No.:
    16/123608
  • Inventors:
    - Armonk NY, US
    Sam G. Chu - Round Rock TX, US
    Dung Q. Nguyen - Austin TX, US
    Binglong Zhang - Austin TX, US
    Howard Levy - Austin TX, US
    David R. Terry - Austin TX, US
    Steven J. Battle - Austin TX, US
  • International Classification:
    G06F 9/30
    G06F 12/02
  • Abstract:
    An approach is provided in which a system writes a set of data into a register file entry that includes a first memory array and a second memory array. The register file entry also includes a set of first write ports corresponding to the first memory array and a set of second write ports corresponding to the second memory array. The system configures a selection bit based on determining that a selected one of the set of first write ports is utilized to store the set of data in the first memory array. In turn, the system reads the set of data out of the first memory array based on the configured selection bit.
Name / Title
Company / Classification
Phones & Addresses
Binglong Zhang
Principal
LINGLONG MANAGEMENT COMPANY LLC
Management Services
9209 Evening Primrose Path, Austin, TX 78750

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