Bradley J Aitchison

US Patent:

6941963, Sep 13, 2005

Filed:

Jun 26, 2003

Appl. No.:

10/609134

Inventors:

Jarmo Ilmari Maula - Espoo, FI
Hannu Leskinen - Espoo, FI
Teemu Lang - Helsinki, FI
Pekka Kuosmanen - Espoo, FI
Kari Härkönen - Kauniainen, FI
Bradley J. Aitchison - Eugene OR, US

Assignee:

Planar Systems, Inc. - Beaverton OR

International Classification:

F16K031/02
F16K049/00

US Classification:

137 1, 137334, 137341, 251331, 25112917, 25112918

Abstract:

A diaphragm valve includes a pressure vent communicating with an enclosed space behind the diaphragm for reducing resistance to transitioning of the diaphragm between the open and closed positions. In some implementations, a pump or other source of suction is coupled to the pressure vent to reduce fluid pressure in the enclosed space. When used in an atomic layer deposition (ALD) system, the venting and suction improves the thin film deposition process and prevents leakage through the valve of potentially toxic ALD precursor vapors. Features for thermal management and reliability enhancement are also described.

US Patent:

7021330, Apr 4, 2006

Filed:

Jun 26, 2003

Appl. No.:

10/609339

Inventors:

Jarmo Ilmari Maula - Espoo, FI
Hannu Leskinen - Espoo, FI
Teemu Lang - Helsinki, FI
Pekka Kuosmanen - Espoo, FI
Kari Härkönen - Kauniainen, FI
Bradley J. Aitchison - Eugene OR, US

Assignee:

Planar Systems, Inc. - Beaverton OR

International Classification:

F16K 49/00
F16K 31/126

US Classification:

137341, 251331

Abstract:

A shut-off type diaphragm valve adapted for use in an atomic layer deposition system includes a valve seat having an annular seating surface that surrounds an inlet of the valve and extends radially therefrom. The seating surface contacts a substantial portion of the first side of a flexible diaphragm when the diaphragm is closed, to facilitate heat transfer and counteract dissipative cooling of the diaphragm, thereby inhibiting condensation of a medium flowing through the valve passage. The seating surface is preferably flat and smooth, to prevent shearing of an elastomeric diaphragm. For a plastic diaphragm, a ring-shaped seating ridge may extend from the seating surface to cause localized permanent deformation of the diaphragm and enhanced sealing, while still allowing a substantial portion of the diaphragm to contact the seating surface for enhanced heat transfer. Valve speed enhancements and other reliability enhancing features are also described.

US Patent:

7141095, Nov 28, 2006

Filed:

Sep 10, 2003

Appl. No.:

10/660365

Inventors:

Bradley J. Aitchison - Eugene OR, US
Jarmo Maula - Espoo, FI
Hannu Leskinen - Espoo, FI
Teemu Lang - Helsinki, FI
Pekka Kuosmanen - Espoo, FI
Kari Härkönen - Kauniainen, FI
Martti Sonninen - Espoo, FI

Assignee:

Planar Systems, Inc. - Beaverton OR

International Classification:

B01D 45/04
C23C 16/00

US Classification:

95273, 553851, 55428, 55434, 55435, 55441, 55442, 55443, 55446, 55452, 554591, 55461, 55462, 55465, 55DIG 14, 118715, 118723 R, 118724, 4272481, 42725523, 42725528, 4272557

Abstract:

A precursor delivery system includes a flow path from a precursor container to a reaction space of a thin film deposition system, such as an atomic layer deposition (ALD) reactor. A staging volume is preferably established between the precursor container and the reaction space for receiving at least one dose of the precursor material from the precursor container, from which a series of pulses is released toward the reaction space. The precursor material is typically vaporized after loading it in the precursor container by heating or reducing the pressure inside the precursor container. A vacuum line is preferably coupled to the precursor container and bypasses the reaction space for reducing pressure inside the precursor container without drawing particles into the reaction space. A high conductivity particle filter having inertial traps may be included, preferably between the precursor container and a staging volume, for filtering particles from the precursor material.

US Patent:

7191793, Mar 20, 2007

Filed:

Apr 3, 2006

Appl. No.:

11/278482

Inventors:

Jarmo Ilmari Maula - Espoo, FI
Hannu Leskinen - Espoo, FI
Teemu Lang - Helsinki, FI
Pekka Kuosmanen - Espoo, FI
Kari Härkönen - Kauniainen, FI
Bradley J. Aitchison - Eugene OR, US

Assignee:

Planar Systems, Inc. - Beaverton OR

International Classification:

F16K 7/12

US Classification:

137341, 251331

Abstract:

A shut-off type diaphragm valve adapted for use in an atomic layer deposition system includes a flexible diaphragm operable to flex between an open position whereby a valve passage is at least partially open and a closed position whereby a substantial portion of a first side of the diaphragm is pressed against a valve seat to thereby block the valve passage and facilitate heat transfer between the valve seat and the diaphragm. In some embodiments, a heating body thermally contacts the valve body and extends proximal to a second side of the diaphragm opposite the first side thereof to form a thermally conductive pathway that facilitates maintaining an operating temperature at the diaphragm. A thermally resistive member may be interposed between the valve passage and an actuator, such as a solenoid, for attenuating heat transfer between the valve passage and the actuator.

US Patent:

20040087081, May 6, 2004

Filed:

Jun 30, 2003

Appl. No.:

10/611797

Inventors:

Bradley Aitchison - Eugene OR, US
Arto Pakkala - Siuntio, FI
Pekka Kuosmanen - Espoo, FI
Kari Harkonen - Kauniainen, FI

International Classification:

H01L021/8242

US Classification:

438/240000

Abstract:

A dielectric structure formed on a substrate using a thin film deposition technique such as atomic layer deposition (ALD) includes at least one layer of current leakage inhibiting dielectric material, such as AlO, HfO, or ZrO, for example, in combination with niobium oxide (NbO). The NbOis either incorporated into the dielectric structure as a dopant in a layer of the current leakage inhibiting material or as one or more separate layers in addition to the layer or layers of current leakage inhibiting material. The dielectric structure may be used in miniature capacitors for integrated circuit devices such as DRAM devices, for example. In some embodiments, one or more capacitor electrodes are formed around the dielectric structure in the same ALD processing system. One or more of the electrodes may comprise a transition metal nitride, a noble metal, or a noble metal alloy.

US Patent:

20040261850, Dec 30, 2004

Filed:

Jun 26, 2003

Appl. No.:

10/609136

Inventors:

Jarmo Maula - Espoo, FI
Hannu Leskinen - Espoo, FI
Teemu Lang - Helsinki, FI
Pekka Kuosmanen - Espoo, FI
Kari Harkonen - Kauniainen, FI
Bradley Aitchison - Eugene OR, US

International Classification:

F16K049/00

US Classification:

137/334000

Abstract:

A diaphragm valve includes a heating body that thermally contacts a valve body of the valve and extends proximal to a diaphragm of the valve opposite a valve passage through which medium flows. The heating body forms a thermally conductive pathway between the valve body and the diaphragm that facilitates maintaining an operating temperature at the diaphragm. When used in an atomic layer deposition (ALD) system, the diaphragm valve inhibits condensation or freezing of high-temperature ALD precursor gases in the valve passage. A plunger including thermally insulating features preferably extends through a central opening in the heating body to operably couple a valve actuator to the diaphragm. In some embodiments, a thermally resistive member may be interposed between the valve passage and the actuator for attenuating heat transfer between the valve passage and the actuator.

US Patent:

20070089674, Apr 26, 2007

Filed:

Nov 28, 2006

Appl. No.:

11/564276

Inventors:

Bradley Aitchison - Eugene OR, US
Jarmo Maula - Espoo, FI
Hannu Leskinen - Espoo, FI
Teemu Lang - Helsinki, FI
Pekka Kuosmanen - Espoo, FI
Kari Harkonen - Kauniainen, FI
Martti Sonninen - Espoo, FI
Tommy Turkulainen - Kirkkonummi, FI

Assignee:

Planar Systems, Inc. - Beaverton OR

International Classification:

C23C 16/00
B01D 46/00

US Classification:

118715000, 095273000, 427248100

Abstract:

A precursor delivery system includes a flow path from a precursor container to a reaction space of a thin film deposition system, such as an atomic layer deposition (ALD) reactor. At least a portion of the flow path may be formed in one or more blocks of thermally conductive material forming an elongate thermally conductive body extending from the precursor container toward the reaction space. In some embodiments, a heater is thermally associated with the thermally conductive body to inhibit condensation of precursor vapor in the flow path. A high conductivity particle filter having inertial traps is preferably included for filtering particles from the precursor material. The particle filter preferably include a filter passage including turns and inertial traps adjacent the turns. In some embodiments, the filter passage and the inertial traps may be formed in the thermally conductive body between the precursor container and the reaction space.

US Patent:

20070117383, May 24, 2007

Filed:

Nov 28, 2006

Appl. No.:

11/564272

Inventors:

Bradley Aitchison - Eugene OR, US
Jarmo Maula - Espoo, FI
Hannu Leskinen - Espoo, FI
Teemu Lang - Helsinki, FI
Pekka Kuosmanen - Espoo, FI
Kari Harkonen - Kauniainen, FI
Martti Sonninen - Espoo, FI
Tommy Turkulainen - Kirkkonummi, FI

Assignee:

Planar Systems, Inc. - Beaverton OR

International Classification:

H01L 21/44
C23C 16/00

US Classification:

438680000, 118715000

Abstract:

A precursor delivery system includes a flow path from a precursor container to a reaction space of a thin film deposition system, such as an atomic layer deposition (ALD) reactor. A staging volume is preferably established between the precursor container and the reaction space for receiving at least one dose of the precursor material from the precursor container, and from which pulses are released toward the reaction space. A pulse control device is preferably interposed between the staging volume and the reaction space. A sensor may sense a physical condition in the staging volume for providing feedback to a controller of the precursor delivery system, for performance monitoring and control.