Brian L Gilmore

Address:

1905 San Carlos Ave, Allen, TX 75002

VIN:

5FNYF3H56BB019370

Make:

HONDA

Model:

PILOT

Year:

2011

US Patent:

7888685, Feb 15, 2011

Filed:

Jul 27, 2004

Appl. No.:

10/900938

Inventors:

Larry Wayne Shive - St. Charles MO, US
Brian Lawrence Gilmore - Richardson TX, US

Assignee:

MEMC Electronic Materials, Inc. - St. Peters MO

International Classification:

H01L 29/15

US Classification:

257 77, 438745, 438753, 216100

Abstract:

Processes for the purification of silicon carbide structures, including silicon carbide coated silicon carbide structures, are disclosed. The processes described can reduce the amount of iron contamination in a silicon carbide structure by 100 to 1000 times. After purification, the silicon carbide structures are suitable for use in high temperature silicon wafer processing.

US Patent:

8058173, Nov 15, 2011

Filed:

Dec 19, 2007

Appl. No.:

11/960236

Inventors:

Larry W. Shive - St. Charles MO, US
Brian L. Gilmore - Allen TX, US

Assignee:

MEMC Electronic Materials, Inc. - St. Peters MO

International Classification:

H01L 21/302

US Classification:

438692, 438691, 438795, 257E21214

Abstract:

Methods for reducing the surface roughness of semiconductor wafers through a combination of rough polishing and thermally annealing the wafer.

US Patent:

8153538, Apr 10, 2012

Filed:

Dec 9, 2010

Appl. No.:

12/964143

Inventors:

Larry Wayne Shive - St. Charles MO, US
Brian Lawrence Gilmore - Allen TX, US

Assignee:

MEMC Electronic Materials, Inc. - St. Peters MO

International Classification:

H01L 21/26
H01L 21/324

US Classification:

438795, 438571, 438770, 438776, 438789, 438799, 257347, 257682, 257E21328, 257E21285, 257E21639

Abstract:

A process is disclosed for annealing a single crystal silicon wafer having a front surface and a back surface, and an oxide layer disposed on the front surface of the wafer extending over substantially all of the radial width. The process includes annealing the wafer in an annealing chamber having an atmosphere comprising oxygen. The process also includes maintaining a partial pressure of water above a predetermined value such that the wafer maintains the oxide layer through the annealing process. The annealed front surface is substantially free of boron and phosphorus.

US Patent:

8220646, Jul 17, 2012

Filed:

Sep 14, 2011

Appl. No.:

13/232676

Inventors:

Brian Lawrence Gilmore - Allen TX, US
Lance G. Hellwig - Florissant MO, US

Assignee:

MEMC Electronic Materials, Inc. - St. Peters MO

International Classification:

A47G 19/08

US Classification:

211 4118

Abstract:

A support for a semiconductor wafer includes a plate having a support surface for supporting the wafer and a recessed surface spaced from the support surface and spaced from the wafer. A plurality of holes extends from the recessed surface, and the support surface is free of holes to inhibit contamination of the wafer.

US Patent:

8220647, Jul 17, 2012

Filed:

Sep 14, 2011

Appl. No.:

13/232684

Inventors:

Brian Lawrence Gilmore - Allen TX, US
Lance G. Hellwig - Florissant MO, US

Assignee:

MEMC Electronic Materials, Inc. - St. Peters MO

International Classification:

A47G 19/08

US Classification:

211 4118

Abstract:

A wafer boat for a semiconductor wafer includes vertical rods, fingers supported by the vertical rods, and plates supported by the fingers. The plate has a support surface for supporting the wafer and a recessed surface spaced from the support surface and spaced from the wafer. A plurality of holes extends from the recessed surface, and the support surface is free of holes to inhibit contamination of the wafer.

US Patent:

8420554, Apr 16, 2013

Filed:

May 3, 2010

Appl. No.:

12/772627

Inventors:

Brian Lawrence Gilmore - Foristell MO, US

Assignee:

MEMC Electronic Materials, Inc. - St. Peters MO

International Classification:

H01L 21/324

US Classification:

438795, 438907, 257E21497, 269289 R

Abstract:

A wafer support ring and a method of using the same are disclosed herein. The support ring supports a wafer during a first processing operation. A top surface of the support ring is in contact with a first plurality of locations on a surface of the wafer during the first processing operation. A second wafer support structure is used to support the wafer during a second processing operation. A top surface of the second wafer support structure is in contact with a second, different plurality of locations on the surface of the wafer during the second processing operation. The wafer support ring may also have an outer lip disposed about an outer periphery of the support ring that has a depth such that it does not form part of the top surface of the support ring.

US Patent:

8042697, Oct 25, 2011

Filed:

Jun 30, 2008

Appl. No.:

12/165048

Inventors:

Brian Lawrence Gilmore - Foristell MO, US
Lance G. Hellwig - Florissant MO, US

Assignee:

MEMC Electronic Materials, Inc. - St. Peters MO

International Classification:

A47G 19/08

US Classification:

211 4118

Abstract:

A support for a semiconductor wafer includes a plate having a support surface for supporting the wafer and a recessed surface spaced from the support surface and spaced from the wafer. A plurality of holes extends from the recessed surface, and the support surface is free of holes to inhibit contamination of the wafer.

US Patent:

20100098519, Apr 22, 2010

Filed:

Oct 17, 2008

Appl. No.:

12/253664

Inventors:

Larry Wayne Shive - St. Charles MO, US
Brian Lawrence Gilmore - Foristell MO, US
Timothy John Snyder - Florissant MO, US

Assignee:

MEMC ELECTRONIC MATERIALS, INC. - St. Peters MO

International Classification:

H01L 21/687

US Classification:

414587, 414586

Abstract:

A wafer support for supporting a semiconductor wafer during a process including varied temperature. The wafer support includes a body having a top surface adapted to receive the semiconductor wafer so a portion of the top surface supports the wafer. The top surface has a recessed area including an inclined surface rising from a bottom of the recessed area. The inclined surface has an incline angle that is no more than about ten degrees.