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Brian M Greene

age ~48

from Lexington, MA

Brian Greene Phones & Addresses

  • 235 Lincoln St, Lexington, MA 02421 • (973)5208155
  • 87 W End Ave, Florham Park, NJ 07932
  • 20 Rocky Hill Rd, Burlington, MA 01803 • (781)3650165
  • 43 E Joseph St, Moonachie, NJ 07074 • (201)9830678
  • Ringwood, NJ
  • Conshohocken, PA
  • Moultonborough, NH
  • Morgan, NJ
  • Belmont, MA

Work

  • Company:
    Umass memorial medical center
    Aug 2008
  • Position:
    Patient transporter

Education

  • School / High School:
    Quinsigamond Community College- Worcester, MA
    2010
  • Specialities:
    Associate's Degree in Radiologic Technology

Skills

Patient care • equipment operation and troubleshooting • quality control • inventory ordering • billing • advanced computer proficiency • knowledge of equipment and peripherals (... • printers • cables • etc.) • customer service • Basic Life Support certified • trained in Venipuncture and IV starts

Isbn (Books And Publications)

The Elegant Universe: Superstrings, Hidden Dimensions, and the Quest for the Ultimate Theory

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Author
Brian Greene

ISBN #
0224052993

The Fabric of the Cosmos: Space, Time, and the Texture of Reality

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Author
Brian Greene

ISBN #
0375412883

The Fabric of the Cosmos: Space, Time, and the Texture of Reality

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Author
Brian Greene

ISBN #
0375727205

The Elegant Universe: Superstrings, Hidden Dimensions, and the Quest for the Ultimate Theory

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Author
Brian Greene

ISBN #
0393058581

The Meaning Of Relativity: Including the Relativistic Theory of the Non-Symmetric Field

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Author
Brian Greene

ISBN #
0691120277

License Records

Brian M Greene

Address:
Burlington, MA 01803
License #:
150570 - Expired
Issued Date:
Nov 14, 2013
Expiration Date:
Jun 3, 2016
Type:
Broker

Brian Greene

License #:
RAD02563 - Active
Category:
Radiologic Technology
Issued Date:
Sep 2, 2015
Expiration Date:
Jul 31, 2017
Type:
Radiographer
Name / Title
Company / Classification
Phones & Addresses
Brian Greene
Religious Leader
Pentecostal Tabernacle Office
Religious Organizations
345 Washington St, Cambridge, MA 02139
Website: ptspice.org
Brian Greene
Manager
www.bar-info.com
Nonclassifiable Establishments
8 Richfield Terrace, Clifton, NJ 07015
Website: bar-info.com
Brian Greene
Owner
www.bar-info.com
Nonclassifiable Establishments
8 Richfield Terrace, Clifton, NJ 07015
Website: bar-info.com
Brian Greene
Partner
www.bar-info.com
Nonclassifiable Establishments
8 Richfield Terrace, Clifton, NJ 07015
Website: bar-info.com
Brian J. Greene
Principal
Police and Firemen S Insur Associates Hoboken
Insurance Agent/Broker
70 Humboldt St, Wood-Ridge, NJ 07075
Brian Greene
Principal
Drop The Beat
Drinking Place
32 Bch Rd, Salisbury Beach, MA 01952
Brian W. Greene
Manager
B. Greenenergy Dynamics, LLC
Business Services at Non-Commercial Site
1 Brk St, Boston, MA 02131
Brian Greene
Partner, Manager, Owner
www.bar-info.com
8 Richfield Ter, Clifton, NJ 07015

Us Patents

  • Opto-Thermal Annealing Methods For Forming Metal Gate And Fully Silicided Gate Field Effect Transistors

    view source
  • US Patent:
    7410852, Aug 12, 2008
  • Filed:
    Apr 21, 2006
  • Appl. No.:
    11/408522
  • Inventors:
    Scott D. Allen - Ledgewood NJ, US
    Cyril Cabral, Jr. - Mahopac NY, US
    Kevin K. Dezfulian - Mount Kisco NY, US
    Brian J. Greene - Danbury CT, US
    Rajarao Jammy - Hopewell Junction NY, US
    Christian Lavoie - Ossinging NY, US
    Zhijiong Luo - Carmel NY, US
    Hung Ng - New Milford NJ, US
    Chun-Yung Sung - Poughkeepsie NY, US
    Clement H. Wann - Carmel NY, US
    Huilong Zhu - Poughkeepsie NY, US
  • Assignee:
    International Business Machines Corporation - Armonk NY
  • International Classification:
    H01L 21/8234
    H01L 21/42
  • US Classification:
    438197, 438535, 257E21028, 257E21622
  • Abstract:
    An opto-thermal annealing method for forming a field effect transistor uses a reflective metal gate so that electrical properties of the metal gate and also interface between the metal gate and a gate dielectric are not compromised when opto-thermal annealing a source/drain region adjacent the metal gate. Another opto-thermal annealing method may be used for simultaneously opto-thermally annealing: (1) a silicon layer and a silicide forming metal layer to form a fully silicided gate; and (2) a source/drain region to form an annealed source/drain region. An additional opto-thermal annealing method may use a thermal insulator layer in conjunction with a thermal absorber layer to selectively opto-thermally anneal a silicon layer and a silicide forming metal layer to form a fully silicide gate.
  • Transistor Having V-Shaped Embedded Stressor

    view source
  • US Patent:
    7989298, Aug 2, 2011
  • Filed:
    Jan 25, 2010
  • Appl. No.:
    12/692859
  • Inventors:
    Kevin K. Chan - Staten Island NY, US
    Brian J. Greene - Wappingers Falls NY, US
    Judson R. Holt - Wappingers Falls NY, US
    Jeffrey B. Johnson - Essex Junction NY, US
    Thomas S. Kanarsky - Hopewell Junction NY, US
    Jophy S. Koshy - Wappingers Falls NY, US
    Kevin McStay - Hopewell Junction NY, US
    Johan W. Weijtmans - Hopewell Junction NY, US
    Frank B. Yang - Mahwah NJ, US
  • Assignee:
    International Business Machines Corporation - Armonk NY
    Advanced Micro Devices, Inc - Sunnyvale CA
  • International Classification:
    H01L 21/336
    H01L 21/76
  • US Classification:
    438300, 438222, 438285, 438429, 257E2143, 257E21409
  • Abstract:
    A semiconductor device and a method of making the device are provided. The method can include forming a gate conductor overlying a major surface of a monocrystalline semiconductor region and forming first spacers on exposed walls of the gate conductor. Using the gate conductor and the first spacers as a mask, at least extension regions are implanted in the semiconductor region and dummy spacers are formed extending outward from the first spacers. Using the dummy spacers as a mask, the semiconductor region is etched to form recesses having at least substantially straight walls extending downward from the major surface to a bottom surface, such that a substantial angle is defined between the bottom surface and the walls. Subsequently, the process is continued by epitaxially growing regions of stressed monocrystalline semiconductor material within the recesses. Then the dummy spacers are removed and the transistor can be completed by forming source/drain regions of the transistor that are at least partially disposed in the stressed semiconductor material regions.
  • Opto-Thermal Annealing Methods For Forming Metal Gate And Fully Silicided Gate-Field Effect Transistors

    view source
  • US Patent:
    8039331, Oct 18, 2011
  • Filed:
    May 14, 2008
  • Appl. No.:
    12/120286
  • Inventors:
    Scott D. Allen - Ledgewood NJ, US
    Cyril Cabral, Jr. - Mahopac NY, US
    Kevin K. Dezfulian - Mount Kisco NY, US
    Brian J. Greene - Yorktown Heights NY, US
    Rajarao Jammy - Hopewell Junction NY, US
    Christian Lavoie - Ossining NY, US
    Zhijiong Luo - Carmel NY, US
    Hung Ng - New Milford NJ, US
    Chun-Yung Sung - Poughkeepsie NY, US
    Clement H. Wann - Carmel NY, US
    Huilong Zhu - Poughkeepsie NY, US
  • Assignee:
    International Business Machines Corporation - Armonk NY
  • International Classification:
    H01L 21/336
    H01L 21/8234
  • US Classification:
    438197, 438199, 257E21632
  • Abstract:
    An opto-thermal annealing method for forming a field effect transistor uses a reflective metal gate so that electrical properties of the metal gate and also interface between the metal gate and a gate dielectric are not compromised when opto-thermal annealing a source/drain region adjacent the metal gate. Another opto-thermal annealing method may be used for simultaneously opto-thermally annealing: (1) a silicon layer and a silicide forming metal layer to form a fully silicided gate; and (2) a source/drain region to form an annealed source/drain region. An additional opto-thermal annealing method may use a thermal insulator layer in conjunction with a thermal absorber layer to selectively opto-thermally anneal a silicon layer and a silicide forming metal layer to form a fully silicide gate.
  • Detachable Handle For A Drinking Device

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  • US Patent:
    20100213206, Aug 26, 2010
  • Filed:
    Sep 7, 2007
  • Appl. No.:
    12/377288
  • Inventors:
    Brian M. Greene - North Easton MA, US
  • International Classification:
    B65D 90/00
  • US Classification:
    220752
  • Abstract:
    A detachable handle for a child's sippy cup. The sippy cup includes a cup portion and a lid portion coupled to the cup portion. The lid portion includes a drinking spout having apertures. The detachable handle includes a ring portion that engages the lid and/or the cup portion, and a pair of grasping portions that extend axially and radially away from the ring portion. Hook portions are radially aligned with, and extend axially opposite the grasping portions, and are engageable with an upper surface of the lid portion. Moving the grasping portions radially inwardly causes the hook portions to move radially outwardly for disengagement from the upper surface and removal of the handle from the sippy cup.
  • Bio-Reactor For The Production Of Bio-Fuel From Algae

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  • US Patent:
    20130061455, Mar 14, 2013
  • Filed:
    Sep 9, 2011
  • Appl. No.:
    13/229028
  • Inventors:
    Brian William Greene - Roslindale MA, US
  • International Classification:
    B23P 17/00
  • US Classification:
    29592
  • Abstract:
    The present embodiment provides an algae bioreactor comprising a coaxial configuration for the optimal dispersion of light and gas.
  • Finfet Structure And Method To Adjust Threshold Voltage In A Finfet Structure

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  • US Patent:
    20130099313, Apr 25, 2013
  • Filed:
    Oct 19, 2011
  • Appl. No.:
    13/276395
  • Inventors:
    Eduard A. CARTIER - New York NY, US
    Brian J. GREENE - Wappingers Falls NY, US
    Dechao GUO - Fishkill NY, US
    Gan WANG - Fishkill NY, US
    Yanfeng WANG - Fishkill NY, US
    Keith Kwong Hon WONG - Wappingers Falls NY, US
  • Assignee:
    INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
  • International Classification:
    H01L 29/78
    H01L 21/28
  • US Classification:
    257347, 438595, 257E29255, 257E21158
  • Abstract:
    FinFET structures and methods of manufacturing the FinFET structures are disclosed. The method includes performing an oxygen anneal process on a gate stack of a FinFET structure to induce Vt shift. The oxygen anneal process is performed after sidewall pull down and post silicide.
  • Stress-Generating Structure For Semiconductor-On-Insulator Devices

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  • US Patent:
    20130168804, Jul 4, 2013
  • Filed:
    Feb 27, 2013
  • Appl. No.:
    13/778419
  • Inventors:
    International Business Machines Corporation - Armonk NY, US
    Brian J. Greene - Fishkill NY, US
    Dureseti Chidambarrao - Weston CT, US
    Gregory G. Freeman - Wappinger Falls NY, US
  • Assignee:
    INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
  • International Classification:
    H01L 29/06
    H01L 21/762
  • US Classification:
    257510, 438435
  • Abstract:
    A stack pad layers including a first pad oxide layer, a pad nitride layer, and a second pad oxide layer are formed on a semiconductor-on-insulator (SOI) substrate. A deep trench extending below a top surface or a bottom surface of a buried insulator layer of the SOI substrate and enclosing at least one top semiconductor region is formed by lithographic methods and etching. A stress-generating insulator material is deposited in the deep trench and recessed below a top surface of the SOI substrate to form a stress-generating buried insulator plug in the deep trench. A silicon oxide material is deposited in the deep trench, planarized, and recessed. The stack of pad layer is removed to expose substantially coplanar top surfaces of the top semiconductor layer and of silicon oxide plugs. The stress-generating buried insulator plug encloses, and generates a stress to, the at least one top semiconductor region.
  • Waste Water Recovery And Utilization System

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  • US Patent:
    6796250, Sep 28, 2004
  • Filed:
    Feb 13, 2003
  • Appl. No.:
    10/366290
  • Inventors:
    Brian W. Greene - Quincy MA 02169
  • International Classification:
    F23B 700
  • US Classification:
    110233, 110238
  • Abstract:
    A waste water recovery and utilization system that converts waste water including gray water, liquid sewerage waste and solid macerated sewerage waste to steam and to electricity comprises a gray water tank, a sewerage tank, a steam generator with a gray water crucible for vaporizing the gray water and a sewerage crucible for vaporizing the liquid sewerage waste and for incinerating the solid macerated sewerage waste thereby generating steam for space heating. A variable speed injection pump cooperates with the gray water tank, with the sewerage tank, with the gray water crucible and with the sewerage crucible. Condensate is collected in a condensate tank. The system is operable on multiple fuels, including hydrogen and oxygen provided by the system, natural gas and liquid propane gas. Alternate energy including solar, wind and mechanical, supply electrical power to an electrolysis machine when conventional electrical energy is to be conserved.

Resumes

Brian Greene Photo 1

Brian Greene Holden, MA

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Work:
UMass Memorial Medical Center

Aug 2008 to 2000
Patient Transporter
Wood Duck Construction Company
Holden, MA
Apr 2006 to Aug 2008
Contractor Assistant
Wal-Mart Stores, Inc
West Boylston, MA
Jun 2000 to Apr 2006
Sales Associate, Customer Service Representative
Education:
Quinsigamond Community College
Worcester, MA
2010 to 2013
Associate's Degree in Radiologic Technology
Massachusetts College of Art and Design
Boston, MA
2002 to 2004
Animation & Digital Photography
Wachusett Regional High School
Holden, MA
1998 to 2002
High School Diploma in Art & Photography
Skills:
Patient care, equipment operation and troubleshooting, quality control, inventory ordering, billing, advanced computer proficiency, knowledge of equipment and peripherals (monitors, printers, cables, etc.), customer service, Basic Life Support certified, trained in Venipuncture and IV starts

Lawyers & Attorneys

Brian Greene Photo 2

Brian Michael Greene, Westfield NJ - Lawyer

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Address:
Farer Fersko
600 South Ave Po Box 580, Westfield, NJ 07091
(908)7898550
Licenses:
New Jersey - Active 2004
Education:
Villanova University School of Law
Degree - JD - Juris Doctor - Law
Graduated - 2002
Boston University
Degree - BA - Bachelor of Arts - Economics and International Relations
Graduated - 1999
Specialties:
Litigation - 60%
Environmental / Natural Resources - 40%
Associations:
Massachusetts State Bar Association - Member
New Jersey State Bar Association - Member
Brian Greene Photo 3

Brian Patrick Greene, Southborough MA - Lawyer

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Address:
2 Choate Lane, Southborough, MA 01772
(508)3033360 (Office)
Licenses:
Massachusetts - Active 1994
Brian Greene Photo 4

Brian Ira Greene, New York NY - Lawyer

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Address:
Stroock & Stroock & Lavan
180 Maiden Lane Floor 17, New York, NY 10038
(212)8066066 (Office), (212)8069066 (Fax)
Licenses:
New York - Currently registered 2005
Education:
University of Michigan Law School
Degree - JD - Juris Doctor - Law
Graduated - 2004
State University of New York, Binghamton
Degree - BA - Bachelor of Arts
Graduated - 2000
Specialties:
Venture Capital - 34%
Corporate / Incorporation - 33%
Mergers / Acquisitions - 33%
Brian Greene Photo 5

Brian M. Greene, Beverly MA - Lawyer

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Address:
Electric Insurance Company
75 Sam Fonzo Dr, Beverly, MA 01915
(201)3106446 (Office)
Licenses:
New York - Currently registered 2011
Education:
Villanova University School of Law
Brian Greene Photo 6

Brian Michael Greene, Beverly MA - Lawyer

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Address:
Electric Insurance Company
75 Sam Fonzo Dr, Beverly, MA 01915
(978)5245384 (Office)
Licenses:
Massachusetts - Active 2002
Specialties:
Commercial - 34%
General Practice - 33%
Litigation - 33%
Brian Greene Photo 7

Brian Greene - Lawyer

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Office:
Brian M. Greene
Specialties:
Government
Real Estate/Real Property
Taxation
ISLN:
914477844
Admitted:
1995
University:
Brigham Young University
Brian Greene Photo 8

Brian Greene - Lawyer

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ISLN:
1000553072
Admitted:
1994
Brian Greene Photo 9

Brian Patrick Greene, Southborough MA - Lawyer

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Office:
2 Choate Ln., Southborough, MA
ISLN:
913609567
Admitted:
1994
University:
Suffolk University, B.S.
Law School:
New England School of Law, J.D.

Wikipedia References

Brian Greene Photo 10

Brian Greene

Brian Greene Photo 11

Brian Greene (American Football)

Brian Greene Photo 12

Brian Greene (Politician)

Plaxo

Brian Greene Photo 13

Brian Greene

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Waltham, MAPartner at Winter Wyman Financial Contracting
Brian Greene Photo 14

Brian Greene

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Southborough, MA

Facebook

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Brian A. Greene

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Brian Greene Photo 16

Brian Greene Jr

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Brian Greene Photo 17

Brian Greene

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Brian Greene Photo 18

Brian Greene

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Brian Greene Photo 19

Brian Austin Greene

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Brian Greene Photo 20

Brian Greene

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Brian Greene Photo 21

Brian M. Greene

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Brian Greene Photo 22

Brian Bt Greene

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Youtube

Brian Greene on David Letterman

Physicist Brian Greene gives a superb explanation of string theory, th...

  • Category:
    Science & Technology
  • Uploaded:
    03 Jan, 2010
  • Duration:
    9m 1s

Provost's Lecture: Alan Alda and Brian Greene...

The discussion between Alda and Greene centered on ways to lend greate...

  • Category:
    Science & Technology
  • Uploaded:
    29 Sep, 2010
  • Duration:
    1h 16m 59s

What's the Big Idea? (Brian Greene), 2008

Brian Greene, string theory evangelist, introduces his big idea to hel...

  • Category:
    News & Politics
  • Uploaded:
    01 Jul, 2008
  • Duration:
    8m 14s

Brian Greene: The universe on a string

www.ted.com n clear, nontechnical language, string theorist Brian Gree...

  • Category:
    Science & Technology
  • Uploaded:
    23 Apr, 2008
  • Duration:
    19m 7s

Brian Greene: The Search For Hidden Dimensions

Brian Greene explains how extra dimensions may solve several problems ...

  • Category:
    Science & Technology
  • Uploaded:
    17 May, 2010
  • Duration:
    8m 17s

Brian Greene

Brian Greene

  • Category:
    Entertainment
  • Uploaded:
    27 Apr, 2009
  • Duration:
    5m 26s

Classmates

Brian Greene Photo 23

Brian Greene

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Schools:
Senter School Foundation Chattanooga TN 1972-1976
Community:
Bob Adkins, Michele Pendleton
Brian Greene Photo 24

Brian Greene

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Schools:
RANDALLSTOWN SENIOR HIGH SCHOOL Randallstown MD 1982-1986
Community:
Patti Lease
Brian Greene Photo 25

Brian Greene

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Schools:
West Rutland High School West Rutland VT 1995-1999
Community:
Robert Turner, Wayne Arnado, Haruhiko Davis
Brian Greene Photo 26

Brian Greene

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Schools:
Mountain Park Elementary School Berkeley Heights NJ 1968-1968, Little Flower School Berkeley Heights NJ 1969-1977
Community:
Janet Giacchi
Brian Greene Photo 27

Brian Greene

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Schools:
Landrum High School Landrum SC 1992-1996
Community:
Preston Kirby, Sherri Langley, Lynne Manna
Brian Greene Photo 28

Brian Greene

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Schools:
Oakville Elementary School Mechanicsville MD 1979-1986
Community:
Marilyn Brown, Brad Harvey, Heidi Howard
Brian Greene Photo 29

Brian Greene

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Schools:
Daleville High School Daleville IN 1992-1996
Community:
Sue Stapp, Bellinger Davis
Brian Greene Photo 30

Brian Greene

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Schools:
Central Catholic High School Lafayette IN 1976-1980
Community:
Ron Fair, Michael Crimmins, Kay Collins, James Rittenhouse, Mary Shackelferd

Myspace

Brian Greene Photo 31

Brian Greene

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Locality:
HOLTSVILLE, New York
Gender:
Male
Birthday:
1945
Brian Greene Photo 32

Brian Greene

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Locality:
Plainview, New York
Gender:
Male
Birthday:
1937
Brian Greene Photo 33

Brian Greene

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Locality:
Eugene, Oregon
Gender:
Male
Birthday:
1945
Brian Greene Photo 34

Brian Greene

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Locality:
7 Cities, Virginia
Gender:
Male
Birthday:
1947
Brian Greene Photo 35

Brian Greene

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Locality:
New York, New York
Gender:
Male
Birthday:
1937

Flickr

Googleplus

Brian Greene Photo 44

Brian Greene

Lived:
Cincinnati, Ohio
Boston, Massachusetts
Work:
Nokia - Operations Manager (2007)
Education:
Walnut Hills High School, University of Cincinnati - BS, Economics, Boston University School of Management - MBA
Bragging Rights:
Have 3 incredible boys, Alexander, Lucas and Maximo!
Brian Greene Photo 45

Brian Greene

Lived:
Columbus, Ohio
Kokomo, Indiana
Louisville, Kentucky
Portland, Oregon
New York City, New York
Indianapolis, Indiana
Chicago, Illinois
Relationship:
Engaged
Tagline:
Take the risk of thinking for yourself, much more happiness, truth, beauty, and wisdom will come to you that way.
Bragging Rights:
I will speak to just about anyone for a length of time directly proprotionate to their level of thinking. Everyone gets a fair chance with me.
Brian Greene Photo 46

Brian Greene

Work:
Wyoming State Library - WYLD Program Manager
Education:
University of South Florida - M.A. Library & Info Sci, St. Meinrad College - B.A. Philosophy
Relationship:
Married
About:
Librarian at the Wyoming State Library since 1992,Past President of the Wyoming Library Association,Board member and "word-chooser"/head judge for the National AARP Spelling Bee and head jud...
Tagline:
In my library, standing still can be a moving experience.
Brian Greene Photo 47

Brian Greene

Work:
System One - Resource Manager (2006)
Aerotek - Recruiter (2005-2006)
Education:
University of West Georgia - English, University of Tennessee - Exercise Science
Brian Greene Photo 48

Brian Greene

Lived:
New York, NY
Work:
Viagogo - International Business Development
Education:
Syracuse University
Brian Greene Photo 49

Brian Greene

Work:
ALI Abroad
Education:
Bard College
About:
Writer, Businessman
Brian Greene Photo 50

Brian Greene

Work:
Tank Design - Front-End Developer (2011)
Education:
New England Institute of Technology - Web Design
Brian Greene Photo 51

Brian Greene

Work:
Broome Developmental Center - Developmental Aide
Education:
Buffalo State College - English / Business
Tagline:
"Learn as if you're going to live forever - Live as if you're going to die tomorrow"

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