Brian R Haas

US Patent:

7041931, May 9, 2006

Filed:

Oct 24, 2002

Appl. No.:

10/280660

Inventors:

Dean Jennings - San Ramon CA, US
Joseph M. Ranish - San Jose CA, US
Brian Haas - San Jose CA, US
Ajit Balakrishna - Sunnyvale CA, US
Sundar Ramamurthy - Fremont CA, US
Aaron Hunter - Santa Cruz CA, US
Mark Yam - Monte Sereno CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

F27B 5/14

US Classification:

219 39, 219405, 219411, 392416, 392418, 118724, 118725, 118 501

Abstract:

In a system for thermal processing of a semiconductor substrate, a reflector plate has a stepped surface facing the substrate during heating and cooling of the substrate. The raised surface of the reflector plate has reduced reflectivity, providing advantages during, among other things, cooling of the substrate. The reflector plate also includes a number of recesses to which one or more pyrometers are coupled. These recesses have a highly reflective surface, providing advantages in the performance of the pyrometers.

US Patent:

62151061, Apr 10, 2001

Filed:

Jul 8, 1999

Appl. No.:

9/350415

Inventors:

Ryan C. Boas - Fremont CA
Ajit Balakrishna - Sunnyvale CA
Benjamin B. Bierman - Fremont CA
Brian L. Haas - San Jose CA
Dean Jennings - San Ramon CA
Wolfgang R. Aderhold - Cupertino CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

F27B 514

US Classification:

219390

Abstract:

A thermal processing method is described in which a temperature response of a substrate may be controlled during a heat-up phase or a cool-down phase, or during both phases. This reduces the thermal budget of the substrate and improves the quality and performance of devices formed on the substrate. In particular, by controlling the rate of heat transfer between the substrate and a thermal reservoir (e. g. , a watercooled reflector plate assembly), the temperature response of the substrate may be controlled during the thermal process. The rate of heat transfer may changed by changing the thermal conductivity between the substrate and the thermal reservoir, by changing the emissivity of a surface of the thermal reservoir, or by changing the distance between the substrate and the thermal reservoir. The thermal conductivity may be changed by changing the characteristics of a thermal transport medium (e. g. , a purge gas) located between the substrate and the thermal reservoir.