Brian W Haas

US Patent:

6803546, Oct 12, 2004

Filed:

Jul 6, 2000

Appl. No.:

09/611349

Inventors:

Ryan C Boas - Santa Clara CA
Ajit Balakrishna - Sunnyvale CA
Benjamin Bierman - Fremont CA
Brian L Haas - San Jose CA
Dean Jennings - San Ramon CA
Wolfgang Aderhold - Cupertino CA
Sundar Ramamurthy - Fremont CA
Abhilash Mayur - Sunnyvale CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

F27B 514

US Classification:

219390, 219405, 219411, 392416, 392418, 118724, 118725, 118 501

Abstract:

A thermal processing method is described in which a temperature response of a substrate may be controlled during a heat-up phase or a cool-down phase, or during both phases. This reduces the thermal budget of the substrate and improves the quality and performance of devices formed on the substrate. In particular, by controlling the rate of heat transfer between the substrate and a thermal reservoir (e. g. , a water-cooled reflector plate assembly), the temperature response of the substrate may be controlled during the thermal process. The rate of heat transfer may be changed by changing the thermal conductivity between the substrate and the thermal reservoir, by changing the emissivity of a surface of the thermal reservoir, or by changing the distance between the substrate and the thermal reservoir.

US Patent:

7041931, May 9, 2006

Filed:

Oct 24, 2002

Appl. No.:

10/280660

Inventors:

Dean Jennings - San Ramon CA, US
Joseph M. Ranish - San Jose CA, US
Brian Haas - San Jose CA, US
Ajit Balakrishna - Sunnyvale CA, US
Sundar Ramamurthy - Fremont CA, US
Aaron Hunter - Santa Cruz CA, US
Mark Yam - Monte Sereno CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

F27B 5/14

US Classification:

219 39, 219405, 219411, 392416, 392418, 118724, 118725, 118 501

Abstract:

In a system for thermal processing of a semiconductor substrate, a reflector plate has a stepped surface facing the substrate during heating and cooling of the substrate. The raised surface of the reflector plate has reduced reflectivity, providing advantages during, among other things, cooling of the substrate. The reflector plate also includes a number of recesses to which one or more pyrometers are coupled. These recesses have a highly reflective surface, providing advantages in the performance of the pyrometers.

US Patent:

7127367, Oct 24, 2006

Filed:

Sep 24, 2004

Appl. No.:

10/950145

Inventors:

Balasubramanian Ramachandran - Santa Clara CA, US
Joseph Michael Ranish - San Jose CA, US
Sundar Ramamurthy - Fremont CA, US
Raman Achutharaman - San Jose CA, US
Brian Haas - San Jose CA, US
Aaron Hunter - Santa Cruz CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G01K 5/00
G01K 7/00
G01K 11/00

US Classification:

702130

Abstract:

Method and apparatus for obtaining a tailored heat transfer profile in a chamber housing a microprocessor manufacturing process, including estimating heat transfer properties of the chamber; estimating heat absorptive properties of a wafer; adjusting the physical characteristics of the chamber to correct the heat transfer properties; and utilizing the chamber for manufacturing microprocessors.

US Patent:

7436505, Oct 14, 2008

Filed:

Apr 4, 2006

Appl. No.:

11/278624

Inventors:

Alexander Belyaev - Mountain View CA, US
Daniel Kavaldjiev - Milpitas CA, US
Amith Murali - Fremont CA, US
Aleksey Petrenko - Milpitas CA, US
Mike D. Kirk - Los Altos Hills CA, US
David Shortt - Milpitas CA, US
Brian L. Haas - San Jose CA, US
Kurt L. Haller - Pleasanton CA, US

Assignee:

KLA-Tencor Technologies Corp. - Milpitas CA

International Classification:

G01N 21/00

US Classification:

3562372

Abstract:

Computer-implemented methods and systems for determining a configuration for a light scattering inspection system are provided. One computer-implemented method includes determining a three-dimensional map of signal-to-noise ratio values for data that would be acquired for a specimen and a potential defect on the specimen by the light scattering inspection system across a scattering hemisphere of the inspection system. The method also includes determining one or more portions of the scattering hemisphere in which the signal-to-noise ratio values are higher than in other portions of the scattering hemisphere based on the three-dimensional map. In addition, the method includes determining a configuration for a detection subsystem of the inspection system based on the one or more portions of the scattering hemisphere.

US Patent:

20040058560, Mar 25, 2004

Filed:

Sep 20, 2002

Appl. No.:

10/251485

Inventors:

Joseph Ranish - San Jose CA, US
Dean Jennings - San Ramon CA, US
Brian Haas - San Jose CA, US

Assignee:

APPLIED MATERIALS, INC.

International Classification:

H01L021/26
H01L021/324
H01L021/477

US Classification:

438/795000

Abstract:

A method for thermally processing a semiconductor substrate comprises: heating the substrate to a target peak temperature while controlling the gas pressure in the processing chamber at a pressure level that is significantly lower than atmospheric pressure; providing a flow of a purge gas between the substrate and a thermal reservoir at or near the time the substrate temperature reaches the target peak temperature while adjusting the gas pressure in the processing chamber to a second pressure level. Preferably, the purge gas has a relatively high thermal conductivity.

US Patent:

20080090309, Apr 17, 2008

Filed:

May 20, 2007

Appl. No.:

11/751027

Inventors:

JOSEPH RANISH - San Jose CA, US
Balasubramanian Ramachandran - Santa Clara CA, US
Sundar Ramamurthy - Fremont CA, US
Vedapuram Achutharaman - Saratoga CA, US
Brian Haas - San Jose CA, US
Aaron Hunter - Santa Clara CA, US
Wolfgang Aderhold - Cupertino CA, US

International Classification:

H01L 21/324

US Classification:

438005000, 257E21324

Abstract:

A method for rapid thermal annealing is disclosed. As the substrate is inserted into an annealing chamber, it begins to heat due to the heat radiating from chamber components that were heated when a previous substrate was annealed. Thus, the leading edge of the substrate may be at an elevated temperature while the trailing edge of the substrate may be at room temperature while the substrate is inserted causing a temperature gradient is present across the substrate. Once the substrate is completely inserted into the annealing chamber, the temperature gradient may still be present. By compensating for the temperature gradient across the substrate, the substrate may be annealed uniformly.

US Patent:

62807900, Aug 28, 2001

Filed:

Jun 30, 1997

Appl. No.:

8/884192

Inventors:

Anthony F. White - Cupertino CA
Satheesh Kuppurao - Santa Clara CA
Brian L. Haas - San Jose CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

427 8

Abstract:

A system and a method for reducing the rate at which volatile contaminants are deposited onto one or more optical components of a substrate processing system are disclosed. A purge fluid is introduced into the processing system at an interior surface of the processing system. A flow of purge fluid is produced across the interior surface to form a contaminant-entraining barrier between a source of the volatile contaminants and the one or more optical components and thereby reduce the rate at which volatile contaminants are deposited onto the optical components of the system. The purge fluid is substantially removed from the processing system.

US Patent:

62151061, Apr 10, 2001

Filed:

Jul 8, 1999

Appl. No.:

9/350415

Inventors:

Ryan C. Boas - Fremont CA
Ajit Balakrishna - Sunnyvale CA
Benjamin B. Bierman - Fremont CA
Brian L. Haas - San Jose CA
Dean Jennings - San Ramon CA
Wolfgang R. Aderhold - Cupertino CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

F27B 514

US Classification:

219390

Abstract:

A thermal processing method is described in which a temperature response of a substrate may be controlled during a heat-up phase or a cool-down phase, or during both phases. This reduces the thermal budget of the substrate and improves the quality and performance of devices formed on the substrate. In particular, by controlling the rate of heat transfer between the substrate and a thermal reservoir (e. g. , a watercooled reflector plate assembly), the temperature response of the substrate may be controlled during the thermal process. The rate of heat transfer may changed by changing the thermal conductivity between the substrate and the thermal reservoir, by changing the emissivity of a surface of the thermal reservoir, or by changing the distance between the substrate and the thermal reservoir. The thermal conductivity may be changed by changing the characteristics of a thermal transport medium (e. g. , a purge gas) located between the substrate and the thermal reservoir.