Brian J Mcdermott

US Patent:

6476374, Nov 5, 2002

Filed:

Apr 25, 2000

Appl. No.:

09/557133

Inventors:

Lester J. Kozlowski - Simi Valley CA
Gerard J. Sullivan - Newbury Park CA
Roger E. Dewames - Thousand Oaks CA
Brian T. McDermott - Glendale AZ

Assignee:

Innovative Technology Licensing, LLC - Thousand Oaks CA

International Classification:

H01L 310304

US Classification:

2502141, 257444

Abstract:

A photodetector sensitive to visible and shorter wavelengths is capable of single photon sensitivity at room temperatures and video frame rates. It includes (a) a compound semiconductor photodiode, biased below its avalanche breakdown threshold, comprising III-V elemental components and having a bandgap with transition energy higher than the energy of infrared photons; and (b) a high trans-impedance interface circuit, arranged to receive a signal from the photodiode junction and to amplify said signal. Preferably, the photodiode junction is integrated in a first microstructure on a first substrate, and its interface circuit in a second microstructure on a second substrate. Both microstructures are then joined in a laminar, sandwich-like structure and communicate via electrically conducting contacts.

US Patent:

6483116, Nov 19, 2002

Filed:

Sep 25, 2000

Appl. No.:

09/669244

Inventors:

Lester J. Kozlowski - Simi Valley CA
Gerard J. Sullivan - Newbury Park CA
Roger E. Dewames - Thousand Oaks CA
Brian T. McDermott - Glendale AZ

Assignee:

Innovative Technology Licensing, LLC - Thousand Oaks CA

International Classification:

H01L 27146

US Classification:

250372

Abstract:

A photodetector sensitive to ultraviolet wavelengths is capable of single photon sensitivity at room temperatures and video frame rates. It includes (a) a compound semiconductor photodiode, biased below its avalanche breakdown threshold, comprising III-V elemental components and having a bandgap with transition energy higher than the energy of visible photons; and (b) a high input impedance MOS interface circuit, arranged to receive a signal from the photodiode junction and to amplify said signal. Preferably, the photodiode junction is integrated in a first microstructure on a first substrate, and its interface circuit in a second microstructure on a second substrate. Both microstructures are then joined in a laminar, sandwich-like structure and communicate via electrically conducting contacts.

US Patent:

8581105, Nov 12, 2013

Filed:

Oct 1, 2012

Appl. No.:

13/632742

Inventors:

Brian J. McDermott - Fountain Hills AZ, US
Daniel McGowan - Casselberry FL, US
Sid Tryzbiak - Winter Springs FL, US

International Classification:

H05K 1/03

US Classification:

174255

Abstract:

A process of making an article of manufacture, the process including constructing an electrical device which implements circuitry having a portion in cavities, the portion defined by an epoxy dielectric material delivered with solid content sufficient that etching the epoxy forms cavities located in, and underneath an initial surface of, the dielectric material, sufficient that the etching of the epoxy uses non-homogeneity with the solid content in bringing about formation of the cavities and sufficient that the etching of the epoxy is such that a plurality of the cavities have a cross-sectional width that is greater than a maximum depth with respect to the initial surface, wherein the etching forms the cavities, and a conductive material, a portion of the conductive material in the cavities thereby forming teeth in the cavities, such that the conductive material forms the portion of the circuitry of the electrical device.

US Patent:

20140091053, Apr 3, 2014

Filed:

Oct 8, 2013

Appl. No.:

14/048592

Inventors:

Brian J. McDermott - Fountain Hills AZ, US
Daniel McGowan - Casselberry FL, US
Sid Tryzbiak - Tulsa OK, US

International Classification:

H05K 3/38

US Classification:

216 18

Abstract:

A multilayer electrical device, such as a printed circuit board, having a tooth structure including a metal layer set in a dielectric. The device includes a base; a conductive layer adjacent to the base; a dielectric material adjacent to conductive layer; a tooth structure including a metal layer set in the dielectric material to join the dielectric material to the metal layer; and wherein the metal layer forms a portion of circuitry.