Brian G Mcmullen

US Patent:

20220316087, Oct 6, 2022

Filed:

Aug 9, 2020

Appl. No.:

17/634176

Inventors:

- Wilmington MA, US
Nathan Stoddard - Chalfont PA, US
Jesse S. Appel - South Hamilton MA, US
Peter Kellerman - Essex MA, US
Parthiv Daggolu - Danvers MA, US
Alexander Martinez - Woburn MA, US
Saeed Pirooz - Lexington MA, US
Brandon Williard - Essex MA, US
Charles Bowen - Hampton NH, US
Brian McMullen - Taunton MA, US
David Morrell - Wakefield MA, US
Dawei SUN - Lynnfield MA, US

International Classification:

C30B 15/06
C30B 29/06
C30B 29/64

Abstract:

A ribbon is formed such that the ribbon floats on a melt using a cold initializer facing an exposed surface of the melt. The ribbon is single crystal silicon. The ribbon is pulled from the silicon melt at a low angle off the melt surface. The ribbon is formed at a same rate as the pulling. The ribbon is separated from the melt at a wall of the crucible where a stable meniscus forms. The ribbon has a thickness between a first surface and an opposite second surface from 50 μm to 5 mm. The ribbon includes a first region extending a first depth from the first surface. The first region has a reduced oxygen concentration relative to a bulk of the ribbon.