Brian J Mueller

US Patent:

6350393, Feb 26, 2002

Filed:

Nov 4, 1999

Appl. No.:

09/428965

Inventors:

Alicia F. Francis - Naperville IL
Brian L. Mueller - Aurora IL
James A. Dirksen - Oswego IL
Paul M. Feeney - Aurora IL

Assignee:

Cabot Microelectronics Corporation - Aurora IL

International Classification:

C09K 1300

US Classification:

252 791, 252 795

Abstract:

Chemical mechanical polishing compositions including an abrasive and cesium hydroxide and methods for polishing dielectric layers associated with integrated circuits using cesium hydroxide containing polishing compositions.

US Patent:

6362104, Mar 26, 2002

Filed:

Feb 10, 2000

Appl. No.:

09/501221

Inventors:

Shumin Wang - Naperville IL
Brian L. Mueller - Aurora IL

Assignee:

Cabot Microelectronics Corporation - Aurora IL

International Classification:

H01L 21302

US Classification:

438692, 438693, 438694

Abstract:

A chemical mechanical polishing composition comprising an oxidizing agent and at least one solid catalyst, the composition being useful when combined with an abrasive or with an abrasive pad to remove multiple metal layers from a substrate.

US Patent:

6383065, May 7, 2002

Filed:

Jan 22, 2001

Appl. No.:

09/766759

Inventors:

Steven K. Grumbine - Aurora IL
Christopher C. Streinz - Patten ME
Brian L. Mueller - Chandler AZ

Assignee:

Cabot Microelectronics Corporation - Aurora IL

International Classification:

B24D 1100

US Classification:

451526, 451539

Abstract:

A polishing pad including a polishing pad substrate and a catalyst having multiple oxidation states wherein the catalyst containing polishing pad is used in conjunction with an oxidizing agent to chemically mechanically polish metal features associated with integrated circuits and other electronic devices.

US Patent:

6527817, Mar 4, 2003

Filed:

Jul 25, 2000

Appl. No.:

09/625142

Inventors:

Mingming Fang - Naperville IL
Brian L. Mueller - Aurora IL
James A. Dirksen - Oswego IL

Assignee:

Cabot Microelectronics Corporation - Aurora CA

International Classification:

B24D 302

US Classification:

51307, 438693, 51308, 51309

Abstract:

A composition and a method for planarizing or polishing a surface with the composition are provided. The composition comprises a liquid carrier, a chemical accelerator, and solids comprising about 5-90 wt. % of fumed metal oxide, and about 10-95 wt. % of abrasive particles, wherein about 90% or more of the abrasive particles (by number) have a particle size no greater than 100 nm. The composition of the present invention is useful in planarizing or polishing a surface with high polishing efficiency, uniformity, and removal rate, with minimal defectivity, such as field loss of underlying structures and topography.

US Patent:

6533832, Mar 18, 2003

Filed:

Jun 26, 1998

Appl. No.:

09/105060

Inventors:

J. Scott Steckenrider - Plainfield IL
Brian L. Mueller - Aurora IL

Assignee:

Cabot Microelectronics Corporation - Aurora IL

International Classification:

C09G 104

US Classification:

51308, 51309, 106 3, 438692, 438693

Abstract:

An aqueous chemical mechanical polishing slurry useful for polishing the polysilicon layer of a semiconductor wafer comprising an aqueous solution of at least one abrasive, and at least one alcoholamine. The slurry preferably has a pH of from about 9. 0 to about 10. 5 and it includes an optional buffering agent.

US Patent:

6689692, Feb 10, 2004

Filed:

Dec 19, 1997

Appl. No.:

08/994894

Inventors:

Gautam S. Grover - Aurora IL
Brian L. Mueller - Aurora IL
Shumin Wang - Naperville IL

Assignee:

Cabot Microelectronics Corporation - Aurora IL

International Classification:

H01L 21302

US Classification:

438691, 438692, 438693, 51307, 51308, 51309, 252 791, 252 792

Abstract:

A chemical mechanical polishing composition comprising a soluble cerium compound at a pH above 3 and a method to selectively polish a silicon oxide overfill in preference to a silicon nitride film layer in a single step during the manufacture of integrated circuits and semiconductors.

US Patent:

6716755, Apr 6, 2004

Filed:

Jan 10, 2003

Appl. No.:

10/340561

Inventors:

Mingming Fang - Naperville IL
Brian L. Mueller - Middletown DE
James A. Dirksen - Oswego IL

Assignee:

Cabot Microelectronics Corporation - Aurora IL

International Classification:

H01L 21302

US Classification:

438690, 438693, 451 28, 451 36, 451 41

Abstract:

A composition and a method for planarizing or polishing a surface with the composition are provided. The composition comprises a liquid carrier, a chemical accelerator, and solids comprising about 5-90 wt. % of fumed metal oxide, and about 10-95 wt. % of abrasive particles, wherein about 90% or more of the abrasive particles (by number) have a particle size no greater than 100 nm. The composition of the present invention is useful in planarizing or polishing a surface with high polishing efficiency, uniformity, and removal rate, with minimal defectivity, such as field loss of underlying structures and topography.

US Patent:

6984588, Jan 10, 2006

Filed:

Oct 27, 2003

Appl. No.:

10/694408

Inventors:

Gautam S. Grover - Aurora IL, US
Brian L. Mueller - Aurora IL, US
Shumin Wang - Naperville IL, US

Assignee:

Cabot Microelectronics Corporation - Aurora IL

International Classification:

H01L 21/302

US Classification:

438691, 438692, 438693

Abstract:

A chemical mechanical polishing composition comprising a soluble cerium compound at a pH above 3 and a method to selectively polish a silicon oxide overfill in preference to a silicon nitride film layer in a single step during the manufacture of integrated circuits and semiconductors.